JPS61222220A - Apparatus for manufacturing multilayer thin film structure - Google Patents
Apparatus for manufacturing multilayer thin film structureInfo
- Publication number
- JPS61222220A JPS61222220A JP60062091A JP6209185A JPS61222220A JP S61222220 A JPS61222220 A JP S61222220A JP 60062091 A JP60062091 A JP 60062091A JP 6209185 A JP6209185 A JP 6209185A JP S61222220 A JPS61222220 A JP S61222220A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- flexible substrate
- light sources
- multilayer thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は多層薄膜構造、たとえば超格子構造を製造する
装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an apparatus for producing multilayer thin film structures, such as superlattice structures.
［従来技術］
最近、超Ｓ膜を積層した超格子構造を有するデバイスが
、高いキャリア易動度および発光効率等の優れた物性を
有しているために注目されている。[Prior Art] Recently, devices having a superlattice structure in which super-S films are stacked have attracted attention because they have excellent physical properties such as high carrier mobility and luminous efficiency.
結晶半導体材料を用いた超格子構造を製造する方法とし
ては、液相エピタキシ（ＬＰＥ） 、気相エピタキシ（
ＶＰＥ）、分子線エビタキシ（ＭＢＥ）、有機金属化学
気相成長（ＭＯＣＶＤ）および最近では原子層エピタキ
シ（ＡＬＥ）等の結晶成長技術を用いられている。Methods for manufacturing superlattice structures using crystalline semiconductor materials include liquid phase epitaxy (LPE) and vapor phase epitaxy (
Crystal growth techniques such as VPE), molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD), and recently atomic layer epitaxy (ALE) have been used.
一方、アモルファス材料を用いた超格子構造を製造する
方法には、グロー放電分解法およびスバタリン、グ法等
が用いられる。アモルファス超格子は、各層間の格子整
合条件が緩和されるために。On the other hand, methods for manufacturing a superlattice structure using an amorphous material include a glow discharge decomposition method, a subverting method, and the like. The amorphous superlattice is because the lattice matching conditions between each layer are relaxed.
設計や製造の自由度が大きくなるという利点がある。This has the advantage of increasing the degree of freedom in design and manufacturing.
［発明が解決しようとする問題点］
しかしながら、アモルファス超格子をグロー放電分解法
又はスパタリング法等を用いて製造する場合、いずれの
方法も反応性ガスを切り換えることによって薄膜層を交
互に積層している。そのために、各層の界面の汚染の問
題が生じるとともに、基板の温度が高い場合には、異種
層間の不純物の拡散の問題を生じる。このために、十分
な特性を有するデバイスを製造することができなかった
。[Problems to be Solved by the Invention] However, when producing an amorphous superlattice using a glow discharge decomposition method or a sputtering method, both methods require alternately stacking thin film layers by switching reactive gases. There is. This causes the problem of contamination at the interface between each layer, and when the temperature of the substrate is high, the problem of diffusion of impurities between different layers. For this reason, it has not been possible to manufacture devices with sufficient characteristics.
さらに、従来の製造装置では、超格子デバイス等の多層
薄膜構造を効率良く多量に製造することができなかった
。Furthermore, conventional manufacturing equipment has not been able to efficiently manufacture large quantities of multilayer thin film structures such as superlattice devices.
［問題点を解決するための手段］
本発明による多層薄膜構造の製造装置は、２種類以上の
薄膜層が交互に積層された多層薄膜構造を基体上に製造
する装置において。[Means for Solving the Problems] A multilayer thin film structure manufacturing apparatus according to the present invention is an apparatus for manufacturing a multilayer thin film structure in which two or more types of thin film layers are alternately laminated on a substrate.
前記基体を回動させる回動手段を設け、該基体の回動軌
道に沿って、前記２種類以上の薄膜層を各々形成する成
膜手段を相互に干渉しないように配置したことを特徴と
する。A rotating means for rotating the base is provided, and film forming means for forming each of the two or more types of thin film layers are arranged along the rotation trajectory of the base so as not to interfere with each other. .
［作用、］
このように基体を回動させて順に薄膜を堆積させること
で、多層薄膜構造を容易に大量製造することができる。[Function] By rotating the base body and depositing thin films in sequence in this manner, a multilayer thin film structure can be easily mass-produced.
また一つの成膜手段には一種類の原料源が供給されるだ
けであるために、汚染の少ない良好な界面を得ることが
できる。また、光化学反応を用いれば、低温で薄膜を形
成でき、膜質が向上する。Furthermore, since only one type of raw material source is supplied to one film forming means, a good interface with less contamination can be obtained. Furthermore, if a photochemical reaction is used, a thin film can be formed at a low temperature and the film quality will be improved.
［実施例］ 以下、本発明の実施例を図面を用いて詳細に説明する。[Example] Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図（＾）は、本発明による多層薄膜構造の製造装置
の一実施例の概略的断面図であり、第１図（Ｂ）は、そ
のＸ−Ｙ線断面図である。FIG. 1(^) is a schematic cross-sectional view of an embodiment of a multilayer thin film structure manufacturing apparatus according to the present invention, and FIG. 1(B) is a cross-sectional view taken along the line X-Y.
同図において１反応容器ｌ内には、エンドレスのフレキ
シブル基板２が配置されローラ３および３ ′によって
一定方向に一定速度の回動が与えられる。フレキシブル
基板２には、金属箔、マイラ、樹脂フィルム等が用いら
れるが、本実施例では厚さ２０Ｇ＃Ｌｍのポリイミドフ
ィルムを用いた。In the figure, an endless flexible substrate 2 is arranged in one reaction vessel 1, and is rotated at a constant speed in a constant direction by rollers 3 and 3'. Metal foil, Mylar, resin film, etc. are used for the flexible substrate 2, but in this example, a polyimide film with a thickness of 20 G#Lm was used.
また、反応容器ｌ内には光化学反応用の光源４および４
′が二箇所に設けられている。In addition, light sources 4 and 4 for photochemical reactions are provided in the reaction vessel l.
' are provided in two places.
ローラ３および３′が設置されている室には光クリーニ
ング用光源５および５′が設けられ、一種類の薄膜が形
成されたフレキシブル基板２のクリーニングを行う、ク
リーニング用光源としては、加熱を兼ねてハロゲンラン
プを用いてもよいし、光クリーニングを行う場合は低圧
水銀灯等の紫外光源でもよい、また、テンション用のロ
ーラ８によってフレキシブル基板２に張力が与えられ、
光化学反応が生起する部分で平に維持される。Light sources 5 and 5' for optical cleaning are provided in the chamber in which the rollers 3 and 3' are installed, and the light sources for cleaning the flexible substrate 2 on which one type of thin film is formed also serve as a heating source. A halogen lamp may be used for optical cleaning, or an ultraviolet light source such as a low-pressure mercury lamp may be used for optical cleaning.Furthermore, tension is applied to the flexible substrate 2 by a tension roller 8,
It remains flat in the area where photochemical reactions occur.
また、反応容器ｌには、各種薄膜を形成するための反応
性ガスを導入するノズルＢおよび６′が設けられ、各反
応性ガスはフレキシブル基板２上に供給され排気ロアお
よび７′から排気される。Further, the reaction vessel L is provided with nozzles B and 6' for introducing reactive gases for forming various thin films, and each reactive gas is supplied onto the flexible substrate 2 and exhausted from the exhaust lower and 7'. Ru.
七の際、各反応性ガスは仕切板８によって混合すること
なく、個別に光化学反応が生起する。At the time of step 7, each reactive gas is not mixed by the partition plate 8, and photochemical reactions occur individually.
次に、本実施例の動作を説明する。Next, the operation of this embodiment will be explained.
ｔｆ、エンドレスのフレキシブル基板２をローラ３およ
び３′にかけ、テンション用ローラ８および８′を調節
して図示するようにセットする。tf, the endless flexible substrate 2 is placed on the rollers 3 and 3', and the tension rollers 8 and 8' are adjusted and set as shown.
次に、反応容器ｌ内を排気して１０−７丁ｏｒｒとし、
クリーニング用光源５および５′によってフレキシブル
基板２をクリーニングする。Next, the inside of the reaction vessel l was evacuated to 10-7 orr,
The flexible substrate 2 is cleaned by the cleaning light sources 5 and 5'.
次に、ノズル８および６′から各反応性ガスが反応室ｒ
Ａｌ内に所望の流量で導入され、光源４又は４′からの
光によって光化学反応が生起してフレキシブル基板２上
に各々別種の薄膜が堆績する。この時、フレキシブル基
板２を適当な速度で回動させることで、所望の膜厚を得
ることができる。続いて、薄膜が形成された部分は回動
に伴なって移動し、クリーニング用光源５又は５′によ
ってクリーニングされた後、その上にそれぞれ別種の薄
膜が同様に堆積する。このようにして、フレキシブル基
板２が回動することで、順次２種類の薄膜が積層され、
超格子構造が大面積で容易に形成される。その際、異な
る種類の反応性ガスを入れ代える必要がないために、積
層される薄膜間の界面の汚染は大幅に軽減される。Next, each reactive gas is injected into the reaction chamber r from nozzles 8 and 6'.
It is introduced into Al at a desired flow rate, and a photochemical reaction occurs due to the light from the light source 4 or 4', thereby depositing different types of thin films on the flexible substrate 2. At this time, a desired film thickness can be obtained by rotating the flexible substrate 2 at an appropriate speed. Subsequently, the portion on which the thin film has been formed moves as it rotates, and after being cleaned by the cleaning light source 5 or 5', a different type of thin film is similarly deposited thereon. In this way, by rotating the flexible substrate 2, two types of thin films are sequentially laminated.
Superlattice structures are easily formed over large areas. At this time, since there is no need to replace different types of reactive gases, contamination of the interface between the laminated thin films is significantly reduced.
第２図は、本実施例によって製造された超格子構造の模
式的断面図である。FIG. 2 is a schematic cross-sectional view of the superlattice structure manufactured according to this example.
ここでは、フレキシブル基板２の回動速度を０．２ｃｍ
／ｗｉｎとして動作させ、 ａ−８ｉＣ：Ｈの薄膜層
Ｓｌを７０人、ａ−Ｓｉ：Ｈの薄膜ｆｉｓ２を１００人
堆積し、１００層はど積層した。Here, the rotation speed of the flexible substrate 2 is set to 0.2 cm.
/win, 70 people deposited a-8iC:H thin film layer Sl and 100 a-Si:H thin film fis2, and 100 layers were laminated.
また、１丁０を蒸着したポリイミドフィルム上に上記超
格子構造を形成してＥＬ素子を製造すると、発光強度の
強い優れた発光特性を示した。In addition, when an EL device was manufactured by forming the above superlattice structure on a polyimide film on which 1-cho-0 was deposited, excellent light-emitting characteristics with high emission intensity were exhibited.
また１本実施例では、２種類の薄膜を形成する場合を示
したが、３種類以上の薄膜を形成する場合であっても、
同じ種類数の反応性ガスを用い、上記成膜手段を互いに
干渉しないように配置することで、本実施例と同様のプ
ロセスにて超格子構造等の多層薄膜構造を形成できる。In addition, although this embodiment shows the case where two types of thin films are formed, even when three or more types of thin films are formed,
By using the same number of reactive gases and arranging the film forming means so as not to interfere with each other, a multilayer thin film structure such as a superlattice structure can be formed by the same process as in this embodiment.
なお、本実施例ではフレキシブル基板上に超格子を形成
したが、第３図に示すようにベル）１Ｇをローラ３およ
び３′にかけ、その上に固い基板１１を接着してもよい
。In this embodiment, a superlattice is formed on a flexible substrate, but as shown in FIG. 3, a bell) 1G may be applied to rollers 3 and 3', and a hard substrate 11 may be adhered thereon.
［発明の効果］
以上詳細に説明したように、本発明による多層薄膜構造
の製造装置は、超格子構造等の多層薄膜構造を迅速に、
且つ大量に製造することができる。[Effects of the Invention] As explained in detail above, the multilayer thin film structure manufacturing apparatus according to the present invention can quickly produce a multilayer thin film structure such as a superlattice structure.
Moreover, it can be manufactured in large quantities.
また、薄膜を形成するための原料源が種類ごとに別個で
あるために、界面の汚染が少ない良好な多層薄膜を製造
することができる。Moreover, since the raw material sources for forming the thin film are different for each type, it is possible to produce a good multilayer thin film with less contamination at the interface.
第１図（Ａ）は１本発明による多層薄膜構造の製造？ｔ
Ｍの一実施例の概略的断面図、第１図（Ｂ）は、そのＸ
−Ｙ線断面図、
第２図は１本実施例によって製造された超格子構造の模
式的断面図。
第３図は１本発明の他の実施例の部分拡大図である。
ｌ＠ｅ・反応容器 ２・・・フレキシブル基板４およ
び４′・・・光化学反応用光源
６および６′・・拳ノズル １１・・・固い基板Ｓ１．
５２−−・薄膜層
代理人 弁理士 山 下 積 平
部２図
第３図FIG. 1(A) shows the production of a multilayer thin film structure according to the present invention. t
A schematic cross-sectional view of one embodiment of M, FIG.
FIG. 2 is a schematic cross-sectional view of a superlattice structure manufactured according to this example. FIG. 3 is a partially enlarged view of another embodiment of the present invention. l@e・Reaction container 2...Flexible substrate 4 and 4'...Light source for photochemical reaction 6 and 6'...Fist nozzle 11...Hard substrate S1.
52--Thin layer agent Patent attorney Tsumi Yamashita Figure 2, Figure 3
Claims (2)
構造を基体上に製造する装置において、前記基体を回動
させる回動手段を設け、 該基体の回動軌道に沿って、前記２種類以上の薄膜層を
各々形成する成膜手段を相互に干渉しないように配置し
たことを特徴とする多層薄膜構造の製造装置。(1) In an apparatus for manufacturing a multilayer thin film structure in which two or more types of thin film layers are alternately laminated on a substrate, a rotation means for rotating the substrate is provided, and the rotation means for rotating the substrate is provided, and the A manufacturing apparatus for a multilayer thin film structure, characterized in that film forming means for forming two or more types of thin film layers are arranged so as not to interfere with each other.
記基体上に薄膜を堆積することを特徴とする特許請求の
範囲第１項記載の多層薄膜構造の製造装置。(2) The apparatus for producing a multilayer thin film structure according to claim 1, wherein the film forming means deposits the thin film on the substrate by a photochemical reaction of a raw material gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60062091A JPS61222220A (en) | 1985-03-28 | 1985-03-28 | Apparatus for manufacturing multilayer thin film structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60062091A JPS61222220A (en) | 1985-03-28 | 1985-03-28 | Apparatus for manufacturing multilayer thin film structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61222220A true JPS61222220A (en) | 1986-10-02 |
Family
ID=13190034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60062091A Pending JPS61222220A (en) | 1985-03-28 | 1985-03-28 | Apparatus for manufacturing multilayer thin film structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61222220A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4933300A (en) * | 1987-02-12 | 1990-06-12 | Hideomi Koinuma | Process for forming multilayer thin film |
| JP2020191781A (en) * | 2014-07-23 | 2020-11-26 | デイヴィッド ハイランド | System and method for collection and distribution of space-based solar energy |
-
1985
- 1985-03-28 JP JP60062091A patent/JPS61222220A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4933300A (en) * | 1987-02-12 | 1990-06-12 | Hideomi Koinuma | Process for forming multilayer thin film |
| JP2020191781A (en) * | 2014-07-23 | 2020-11-26 | デイヴィッド ハイランド | System and method for collection and distribution of space-based solar energy |
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