JP2639616B2 - Semiconductor film formation method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor film forming method for forming a semiconductor or a semiconductor film on a substrate by a gas phase method. The present invention mainly comprises silicon in a semiconductor.
To form a coating, and apply this coating by laser annealing.
Semiconductor film formation by adding hydrogen after crystallization
It is about the method.

[0002]

2. Description of the Related Art Conventionally, a vapor phase method, particularly a reduced pressure vapor phase method, has been known for producing a silicon film when a film containing silicon as a main component is to be formed. This reduced pressure gas phase method is based on the application of the present applicant, and is described in Japanese Patent Publication No. 51-1389. However, this reduced pressure gas phase method is intended to form a film having a uniform thickness on a large number of large-area substrates, and a silicide gas, particularly, silane is used in an amount of 0.1 torr to 10 torr.
It is intended to be formed on a substrate by thermal decomposition under reduced pressure, and the temperature required for forming a film is 600 ° C to 800 ° C.
° C. This high temperature treatment is permissible when the substrate is a heat-resistant ceramic material such as semiconductor silicon or a compound of silicon such as silicon oxide and silicon nitride.

However, when a substrate is made of an organic substance such as epoxy or glass or a large-sized substrate (for example, glass) which has a certain coefficient of thermal expansion and is easily broken, or a substrate coated with a conductive film on this substrate, Has been a huge drawback. On the other hand, a glow discharge method is known as a method in which a film is formed at a low temperature of room temperature to 300 ° C., but a film formed on only one substrate and having a very uneven film thickness is formed thereon. Have been. This means that a substrate of approximately 2 cm square or approximately 3 cm
The silicide gas, especially silane, is introduced into this reactor by immersion in an atmosphere reduced to 10 torr, especially 0.1 torr to 1 torr, and at that time, the vicinity of the substrate is glow-discharged by an induction furnace to activate the silicide gas. To form a film on the substrate.

However, in this case, a large amount of hydrogen needs to be mixed into the film, so that the carrier gas is 100% hydrogen, and the silane is also 100% or a gas diluted with hydrogen, nitrogen or argon gas. The methods used are known. As a method for forming a plurality of coatings on a substrate, there is, for example, a "method of manufacturing a semiconductor single crystal thin film and a manufacturing apparatus therefor" described in JP-A-53-1465. The manufacturing method disclosed in the above publication includes a first vapor growth chamber, a second vapor growth chamber, and a preliminary chamber, and a plurality of films are formed by sequentially moving and disposing the substrates in the vapor growth chamber. You. The above manufacturing method is excellent in productivity because a film can be continuously formed on a substrate. Further, a "sample transport device in a vacuum apparatus" for forming a plurality of vapor-deposited films by a vacuum chamber connected in series has been disclosed in Japanese Utility Model Application Laid-Open No. 53-1490.
No. 49. Further, a "semiconductor device" in which a P layer, an I layer, and an N layer are formed on a substrate by plasma CVD is disclosed in, for example, JP-B-53-3771.
No. 8 publication.

[0005]

It is known that a non-single-crystal semiconductor generally contains a large number of dangling bonds. For example, the recombination center density in a non-single-crystal semiconductor is as high as 10 ²⁰ cm ⁻³ to 10 ²² cm ⁻³ . But,
In order to manufacture a semiconductor device using a non-single-crystal semiconductor, the recombination center density needs to be 10 ¹⁵ cm ⁻³ to 10 ¹⁶ cm.
Must be ^-3 .

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and reduces the recombination center density by neutralizing dangling bonds. As a result, electrons or holes are reduced.
It is an object of the present invention to provide a method for producing a semiconductor film capable of improving the mobility of a semiconductor film.

[0007]

In order to achieve the above object, a method for forming a semiconductor film according to the present invention comprises a plurality of reaction chambers ,
In the plurality of reaction chambers, without being exposed to the atmosphere
Transfer means for moving the substrate; and a reaction gas in the reaction chamber.
Means for introducing, means for exhausting gas in the reaction chamber,
Means for heating the substrate in the reaction chamber;
Means for supplying induced energy for decomposition and activation.
In the plurality of reaction chambers, different materials are used for the substrate.
Or film forming process to form a film with characteristics
The substrate in one reaction chamber to another reaction
A semiconductor film is formed by moving to the chamber
There, a step of forming a film of silicon or a silicon compound on a substrate using a reactive gas with a compound of silicon, Leh
After by irradiating laser light allowed crystallizing a semiconductor film subjected to laser annealing, characterized by comprising the step of neutralizing the dangling bonds in the semiconductor film by hydrogen. In the method of forming a semiconductor film according to the present invention, the film is formed by applying induced energy.

[0008]

[Operation] The semiconductor film of the present invention is used in a plurality of reaction chambers,
In multiple reaction chambers,
A conveying means for moving the plate, and a reaction gas introduced into the reaction chamber.
Means for introducing, and means for evacuating the gas in the reaction chamber,
Means for heating the substrate in the reaction chamber;
Means for supplying induced energy for solution and activation.
Formed by a semiconductor film forming apparatus. Of the present invention
The semiconductor coating is applied to the substrate in each of the plurality of reaction chambers.
Coating forms a coating with different materials or properties on the surface
Configuration processing is performed independently. The semiconductor coating is formed
Substrate, without exposure to air by the conveying means, one
Transfer from one reaction chamber to another. Especially,
In the first step, a reactive gas having a compound of silicon is introduced to form a film made of silicon or a silicon compound on the substrate. In the second step, the film formed in the first step is irradiated with, for example, a laser beam or a strong light equivalent thereto. Then, the coating is crystallized by laser annealing with the laser light. Thereafter, hydrogen is introduced into the crystallized semiconductor film to neutralize dangling bonds existing in the film.
In addition, the semiconductor film, when being crystallized, emits hydrogen.
It is also possible to introduce. In addition, induction energy can be added to the treatment of the coating. As a result, the present invention was able to neutralize dangling bonds in the coating, reduce the recombination center density, and improve the mobility of electrons or holes.

[0009]

[Embodiment] An embodiment will be described below with reference to the drawings. Example 1 A substrate was made of a conductor (stainless steel, titanium, titanium nitride, or another metal), a semiconductor (silicon, silicon carbide, germanium), an insulator (an organic substance such as alumina, glass, epoxy, or a polyimide resin), or a composite substrate ( A substrate in which a transparent conductive film such as tin oxide or ITO was formed on an insulating substrate, or a substrate in which a P or N-type semiconductor was formed in a single layer or a multilayer) was used. In the present invention as well as in all of the present invention, these are collectively referred to simply as a substrate. Of course, the substrate may be bendable or a rigid plate. FIG. 1 shows an embodiment of a manufacturing apparatus for forming a semiconductor film, particularly a silicon film, of the present invention. In FIG. 1, a substrate 1 is placed next to a boat (eg, quartz) 2. As the substrate 1, a 10 cm square having a thickness of 200 μm is used in the present embodiment. This substrate 1 was sealed in a reaction furnace 3. The reactor 3 is 1 MHz to 100
The reactive gas and the substrate 1 can be excited, reacted or heated by high frequency induction energy from a high frequency heating furnace 4 of MHz, for example, 13.6 MHz.

Further, a heating device 5 by resistance heating is installed outside the heating device. The evacuation of the reactor 3 is performed by a vacuum pump 8 from a portion indicated by reference numeral 6 via a valve 7. The reactive gas reaches the inlet indicated by the reference numeral 9, but at a position remote from the substrate 1, the high-frequency induction energy 10, here 1 GHz to 10 GHz,
For example, it is chemically activated, decomposed or reacted by microwave energy of 2.46 GHz. In the portion of the container 7 ′ that is supplying the high-frequency induction energy 10,
A compound of silicon which is a reactive gas such as silane (SiH
₄ ) completely free of dichlorsilane (SiH ₂ Cl ₂ ), and optionally P-type or N-type impurities, or germanium, tin, lead, or a reactive gas containing nitrogen or oxygen. Mixed.

In addition, in the present embodiment, helium or neon is 5% to 99%, particularly 40% to 90%.
Was mixed in. Here, these reactive gases are chemically activated by the high-frequency energy 10 and partially react with each other. The reaction system (including the container 7 ') is 10
^-3 torr to 10 ² torr, especially 0.01 torr to 5 torr
rr. With respect to performing the chemical activity away from the surface to be formed, there is a method using a catalyst proposed by the present applicant in a gas phase method. For example, there are JP-B-49-12033, JP-B-53-14518, JP-B-53-23667, and JP-B-51-1389. In this embodiment,
Activation by a catalyst in such a catalytic vapor phase method is positively carried out by utilizing high-frequency induction energy, thereby making chemical activation or physical excitation more complete. Silicide gas 14 serving as a reactive gas includes silane (SiH ₄ ), dichlorosilane (SiH ₂ Cl ₂ ),
Trichlorsilane (SiHCl ₃ ), silicon tetrachloride (S
Although iCl ₄ ) and the like were used, silane that was easy to handle was used. In terms of price, dichlorsilane is cheaper,
This may be used.

As a P-type impurity, boron is added so as to have a concentration of 10 ¹⁷ cm ⁻³ to 10 mol% from diborane 15, and as an N-type impurity, phosphine (PH) is added.
₃ ) was used after adjusting to a concentration of 10 ¹⁷ cm ^-3 to 20 mol%. The P-type impurity may be arsine (AsH ₃ ). As the carrier gas 12, helium (He), neon (Ne), or an inert gas containing hydrogen or 5% to 30% of hydrogen was used during the reaction. ) Was utilized with liquid nitrogen. In addition, tin (Sn), germanium (Ge), carbon (C), nitrogen (N), and lead (Pb), which are additives, introduce their hydrogen compound or chloride gas from reference numeral 13 shown in FIG. Is done. When these reactants were liquid at around room temperature, the liquid was bubbled and vaporized by helium, and introduced into the reaction furnace 3 by helium.

In the reaction system, oxygen and the like which first adhered to the inner wall of the vessel were removed by heating at 800 ° C. to 1200 ° C. by the heating device 5. Thereafter, the boat 2 on which the substrate 1 is mounted from the exhaust port side is put into the reaction furnace 3. Thereafter, the container 3 is evacuated by the vacuum pump 8 to 10 ^-3 to
up to rr. Further, for a while, helium or neon was introduced from reference numeral 12 shown in FIG. 1 to purge the reaction system. Also, the container 7 'contains high-frequency energy 1
0 is applied, and the reactive gas is
The required amount is introduced from 3, 14, 15, and 16 and mixed thoroughly. Thereafter, the mixed reactive gas was led to the reaction furnace 3. At this time, the excitation or activation may be promoted by the high frequency induction energy 4 of 10 W to 300 W.

FIG. 2 is a diagram for explaining the characteristics of the film obtained according to this embodiment. In FIG. 2, the temperature (degree C) is shown on the X-axis, and the growth rate of the film is shown on the Y-axis, respectively. As is apparent from FIG. 2, even when the reactive gas is separated from the surface to be formed by 10 cm to 3 m, for example, 1 m, the carrier gas becomes 5% to 99%, for example, 70% of the total introduced gas. Is formed as shown by a curve 22. The uniformity of the coating shown by the curve 22 was within ± 2% between lots and within each lot when the formed film thickness was 5000 °. For reference, when the same amount of nitrogen was used as the carrier gas, a curve 23 shown in FIG. 2 was obtained, and almost no film was formed.

[0015] In addition, hydrogen (H ₂ ) is added to helium by 1%.
When 5% to 30% is added, the uniformity of the coating is ± 3%
Or 4% worse. In contrast to the curve 22 in FIG. 2 showing the case where microwave energy is applied away from the substrate 1,
Even when the high-frequency induction energy 4 was added, the growth rate did not increase much as indicated by the curve 21. A film formed when helium or neon is used as a carrier gas has a non-single-crystal structure of a polycrystalline or amorphous structure because the temperature is as low as room temperature to 400 ° C. This non-single crystal structure
It is generally known that there are many unpaired bonds. For example, in the apparatus of this embodiment, when the carrier gas is nitrogen, the density of the recombination centers is as high as 10 ²⁰ cm ⁻³ to 10 ²² cm ⁻³ . However, if the carrier gas is helium or neon, these gases, especially helium, can move freely in the film, so that dangling bonds are activated and covalently bond each other to neutralize them. there were. Therefore, the density of unpaired bonds is 10 ¹⁷ cm
^-3 to 10 ¹⁹ cm ^-3 could be reduced.

However, in this case, if it is attempted to use the semiconductor as a semiconductor, the density of dangling bonds is 10 ¹⁵ cm ^-3 to 10
^It needs to be reduced to ¹⁶ cm ^-3 . For this reason, in general film formation, a method is known in which hydrogen is activated as a carrier gas and the hydrogen is combined with an unpaired bond to neutralize the hydrogen. However, when this hydrogen is used as a carrier gas instead of helium, the uniformity of the coating becomes extremely poor,
Under the same conditions as the apparatus of FIG. 1, the value was ± 8%. For this reason, in this embodiment, the carrier gas forms a uniform film as helium or neon, and further, after the film is formed, hydrogen or hydrogen in the same reactor or a different reactor is used. The gas mixed with helium was chemically activated by high frequency induction energy. In the apparatus shown in FIG.

At this time, the high-frequency induction energy 4 is
It is preferable that the substrate is oriented in a direction perpendicular to the substrate 1 to promote injection or neutralization of hydrogen or helium into the substrate 1. Needless to say, this semiconductor layer is subjected to optical annealing by laser or strong light energy similar thereto (for example, a xenon lamp) to monocrystallize the non-single-crystal semiconductor. That is, it promotes crystallization, preferably a single crystal,
After the single crystallization or simultaneously with the light annealing, neutralization with hydrogen and helium using the high-frequency induction energy is extremely remarkable. In particular, the carrier mobility can be increased by a factor of 10 to 100 by laser annealing.
It almost doubled to the ideal state of a single crystal. However, this single crystallization alone cannot reduce the density of recrystallization centers to 10 ¹⁴ cm ⁻³ to 10 ¹⁵ cm ⁻³ ,
It remained at 10 ¹⁸ cm ^-3 to 10 ¹⁹ cm ^-3 . Therefore, the induction energy annealing performed after or simultaneously with the laser annealing has a great effect in producing an ideal single crystal semiconductor. As a result, a single-layer film as a P-type or N-type semiconductor can be formed by using a PN junction, PI
N junctions, PNPN junctions, PNPNs,.

For this reason, the coating formed by the method of this embodiment can be applied to a semiconductor laser, a light emitting device, or a photoelectric conversion device such as a solar cell. of course,
The method of this embodiment can be applied to an MIS field-effect transistor, an integrated circuit, or the like, and has great value. When using the microwave of FIG. 1, the energy of the microwave uses a magnetron or the like. However, since it is practically difficult to generate strong energy, activation at a position distant from the substrate 1 is required in industrial production.
It may be implemented using high frequency induction energy of MHz to 100 MHz. Activation, excitation, or reaction of a reactive gas by high-frequency induction energy at a position away from the substrate 1 is 0.5 m to 3 m, particularly 1 m to 1.5 m.
The system pressure is 0.01 torr to 10 to
If it was rr, it hardly decreased.

FIG. 3 is a view for explaining an embodiment for producing a semiconductor film according to the present invention. The embodiment for manufacturing a semiconductor film of the present invention will now be described with reference to FIG. The film forming apparatus shown in FIG. 3 includes a PN junction, a PIN junction, and a PN junction.
PN junction, PNPN... For automatically and continuously forming semiconductor layers of different conductivity types or the same kind of conductivity on a semiconductor such as a PN junction or a Schottky junction having a MIS structure in multiple layers. That is, in order to form a coating film uniformly on a pair of substrates to be formed by superposing a large number of large substrates on the front and back, a reactive gas is reacted or activated at a position away from the substrate according to the present embodiment. And a reaction product or a reactive gas in this reaction or an active state is maintained on the surface, and a high ionization voltage such as helium or neon (24.19 eV,
21.59 eV) It is very important to carry the carrier gas.

In this apparatus, substrates 31 and 31 'placed on a boat are moved to a container 45 by opening and closing a partition plate 44 from the entrance 30 side. In this embodiment ,
By making the back surfaces of the two substrates 31 and 31 'overlap each other, the effective formation surface for the reaction product is doubled and enlarged, so that the actual usage of the reactive gas is reduced to half. Thereafter, the reactive gases 40, 41, and 42 described in the first embodiment are introduced into the excitation chamber 32 by opening and closing the valve 38 on the substrates 31 and 31 ′. In the excitation chamber 32, the high-frequency induction energy 33 chemically excites, activates, or reacts the reactive gas and the carrier gas, and then is introduced into the container 45 through the homogenizer 34. The substrate 31 is introduced into the container 45. If necessary, the substrate 31 is rotated in the direction indicated by reference numerals 50 and 50 'in FIG. The variation in the film growth rate between the reactive gas introduction part 32 side and the exhaust part 36 side is effectively removed to achieve uniformity.

This rotation is for improving the uniformity of the film to be formed. Further, the substrates 31, 31 'are reacted and excited by the high frequency induction energy 35. Then, unnecessary reaction products and carrier gas are exhausted by the vacuum pump 36. This exhaust gas 37 is then
Impurities and residues of reaction products are eliminated by a filter and a trap, and a carrier gas such as helium is purified by a purifier, and is constituted by a closed loop which is introduced again into the carrier gas 40. This means that the exhaust 37, 3
7 ′, 37 ″, etc. As described above, in the system 1, silicon having a predetermined thickness, for example, 10 °
To 10 μm silicon-based coating is formed,
In this case, impurities exhibiting I-type, P-type, or N-type conductivity are deposited on the substrate at the same time when the film is formed and are mixed into the film.

After the treatment of the system 1, the reactive gas of the system and the reaction products in flight were exhausted and eliminated. Thereafter, the boat on which the substrates are planted is moved to the system 2. During this movement, the pressures of the containers of the system 1 and the system 2 must be the same. Thereafter, also in the system 2, similarly to the system 1, a coating containing silicon as a main component is formed according to the design. At this time, the substrate of the system 2 becomes the system 3 and the substrate of the system 3 becomes the system 4,
The substrates of system 4 move to outlet 59. These systems 1 to 4 show systems for forming a P-type film, forming an I-type film (in a state where no impurities are artificially mixed), forming an N-type film, and induction annealing. However, if the junctions are made to be PN, PI ₁ I ₂ N, PNPN, etc., rather than PINs, with their planes generally parallel to the substrate surface, then the number of systems is increased or decreased accordingly.

In this embodiment , a coating film is formed in parallel with the same stoichiometry in parallel with the surface on which the substrate is formed, regardless of the type of impurities, Ge, Sn, Pb,
The amounts of additives such as N, O and C are also uniform in the plane direction. However, the direction to be formed in the film, Eg (energy band gap) of an In, Ge, C, N, the amount of O, can be controlled by changing the type, which is also ne magnitude of this embodiment It is a feature. In this case, the energy band gap can be continuously changed by changing the amount of the additive by the valves 38 and 38 '. As described above, in this embodiment , when silicon carbide is formed on the surface on which the substrate is to be formed, the reactive gas is chemically activated, excited, or reacted at a position distant from the substrate. , Silicon or impurities and additives were stoichiometrically well mixed. As a result, a film was formed in which no specific material was present in the formed film. This is also a feature of this embodiment .

In this embodiment , silicon is mainly described. However, nitrogen is added to this silicon and Si ₃ N
_4-X (0 <x <4), adding germanium to Si
xGe _1-X (0 <x <1), SixS by adding tin
n _1-X (0 <x <1), SixPb by adding lead
_1-X (0 <x <1), SiO 2
_2-X (0 <x <2), SixC _1-X by adding carbon
It goes without saying that a mixture such as (0 <x <1) may be prepared. Further, depending on the value of x, not only Si but also Ge, Sn, or the like may be formed. It is also possible to simultaneously mix P-type or N-type impurities into these semiconductors for the purpose. In particular, in addition to B, conductive impurities In and Zn are added in addition to B as N-type impurities. P as impurity in the mold
In addition, Sb, Te, or Se may be added to improve the activity of impurities.

In the present embodiment , the inert gas as the carrier gas is limited to helium or neon.
It 24.57eV ionization voltage of helium, is it 21.59eV neon, Ar is other inert gas, Kr, to _{N 2} is not 10eV small compared to 15eV and full two. As a result, this He or Ne keeps the ionization state for a long time, and its own active energy is large. As a result, it is presumed that He or Ne forms a uniform film and forms a substantial mean free path of the reactive gas when the reaction product is formed on the surface to be formed. These were obtained from the experimental facts. In particular, Helium separated the reactive gas when a semiconductor film was uniformly formed on a large substrate of 10 cm to 30 cm square as in the apparatus of this embodiment . Even if the chamber required for activation at the position is made small enough to be practically acceptable, it has a great feature that a film with high uniformity can be obtained.

Further, in this embodiment , the coating is
It mainly describes that it is a semiconductor. However, this film is also effective for forming a film for forming single or multiple oxides or nitrides of tin, indium or antimony constituting a semiconductor, particularly a transparent electrode. Then their halides, for example tin chloride (SnCl ₄ ), indium chloride (In ₂ Cl ₃₎
× H ₂ O) liquid is bubbled in helium, and the vaporized and atomized reactive gas is chemically activated in a high-frequency induction furnace to form a film on the surface of the film further away from it. May be. Particularly, in the case of manufacturing one or both of the electrodes of the semiconductor device utilizing light such as a solar cell, after the previous or semiconductor layer to amend these examples semiconductor layer was formed by the method of this embodiment, transparent By continuously forming a conductive film of the above, the electrode can be manufactured, and in this way, the electrode can be flowed in an engineeringly consistent manner.

As the transparent conductive film, not oxides but nitrides such as titanium nitride, tantalum nitride,
Tin nitride or the like may be used. At this time, it is only necessary to react titanium, tantalum, tin, or the like as a reactive gas with a nitride gas such as ammonia. As a substrate,
GaAs, GaAlAs, B other than those described in the first embodiment
Needless to say, it may be made of a compound semiconductor such as P or CdS. A P-N junction is partially formed by selectively injecting or diffusing a P or N-type impurity into the semiconductor or conductor film formed in this embodiment , particularly a semiconductor film containing silicon as a main component, using a photoetching technique. Further, a laser, a diode, a visible light laser, a light emitting element, or a light conversion element using this junction may be manufactured by partially performing laser annealing as needed. Especially,
The energy band gap is set to WN (WIDE TO TO
NALLOW) configuration (W-side is 2 e to 3 eV, N-side is 1 e to 1.5 eV), PIN, MINPN junction, PNPN junction, MIPN junction type configuration, and a transparent conductive electrode according to the present invention is formed on the upper surface thereof However, this may also have the effect of the antireflection film.

[0028]

According to the present invention, a plurality of reaction chambers,
Substrate without touching the atmosphere in multiple reaction chambers
Transfer means for moving the gas, and introducing a reaction gas into the reaction chamber.
Means for exhausting gas from the reaction chamber,
Means for heating the substrate in the reaction chamber, the reaction gas partial
Means for supplying induced energy for solution and activation.
Semiconductor film is produced by the film production equipment
Therefore, the film forming process that forms the film
And done independently. According to the present invention, a film of a silicon compound is formed on a substrate, and the film is irradiated with laser light.
After performing laser annealing and then crystallizing the semiconductor film , hydrogen reduces the recombination center density in the semiconductor film , so that the mobility of electrons or holes in the film can be improved.

[Brief description of the drawings]

FIG. 1 is an embodiment of a manufacturing apparatus for forming a semiconductor film, particularly a silicon film, of the present invention.

FIG. 2 is a diagram for explaining characteristics of a coating film obtained according to the present embodiment.

Is a diagram for explaining the embodiments for manufacturing a semiconductor film of the present invention; FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Boat 3 ... Reactor 4 ... High frequency induction energy 5 ... Heating device 7 ... Valve 7 '... Container 10 ... High frequency induction energy 31, 31 '... Substrate 32, 32', 32 "... Excitation chamber 33 ... High frequency induction energy 34 ... Homogenizer 36, 36 ', 36" ... Vacuum pump 45, 45', 45 "... ·container

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification number Agency reference number FI Technical display location H01L 31/04 H01L 31/04 X

Claims (2)

(57) [Claims] A plurality of reaction chambers and a plurality of reaction chambers.
Transporter that moves the substrate without touching the atmosphere
A step, means for introducing a reaction gas into the reaction chamber,
Means for evacuating the gas in the reaction chamber;
A means for heating and an inducer for decomposing and activating the reaction gas.
Means for supplying conduction energy, said plurality of reactions
In the chamber, coatings with different materials or properties on the substrate
The film forming process for forming
By moving the substrate in one reaction chamber to another reaction chamber
What A method of forming a semiconductor film, forming a coating of silicon or a silicon compound on a substrate using a reactive gas with a compound of silicon, a semiconductor film subjected to laser annealing by irradiating a laser beam < a step of neutralizing dangling bonds in the semiconductor film with hydrogen after crystallizing the semiconductor film with hydrogen. 2. The method according to claim 1, wherein the film is formed by applying induced energy.