JPS5681984A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5681984A
JPS5681984A JP16019579A JP16019579A JPS5681984A JP S5681984 A JPS5681984 A JP S5681984A JP 16019579 A JP16019579 A JP 16019579A JP 16019579 A JP16019579 A JP 16019579A JP S5681984 A JPS5681984 A JP S5681984A
Authority
JP
Japan
Prior art keywords
layer
type
substrate
conductivity type
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16019579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6222475B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Kazuhisa Takahashi
Toshio Murotani
Saburo Takamiya
Jun Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16019579A priority Critical patent/JPS5681984A/ja
Publication of JPS5681984A publication Critical patent/JPS5681984A/ja
Publication of JPS6222475B2 publication Critical patent/JPS6222475B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

Landscapes

  • Light Receiving Elements (AREA)
JP16019579A 1979-12-06 1979-12-06 Semiconductor device Granted JPS5681984A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16019579A JPS5681984A (en) 1979-12-06 1979-12-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16019579A JPS5681984A (en) 1979-12-06 1979-12-06 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5681984A true JPS5681984A (en) 1981-07-04
JPS6222475B2 JPS6222475B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-05-18

Family

ID=15709862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16019579A Granted JPS5681984A (en) 1979-12-06 1979-12-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5681984A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254675A (ja) * 1984-05-31 1985-12-16 Fujitsu Ltd 半導体受光素子の製造方法
JP2006295216A (ja) * 1995-02-02 2006-10-26 Sumitomo Electric Ind Ltd ｐｉｎ型受光素子およびｐｉｎ型受光素子の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671985A (en) * 1979-11-19 1981-06-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light receiving system

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671985A (en) * 1979-11-19 1981-06-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light receiving system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254675A (ja) * 1984-05-31 1985-12-16 Fujitsu Ltd 半導体受光素子の製造方法
JP2006295216A (ja) * 1995-02-02 2006-10-26 Sumitomo Electric Ind Ltd ｐｉｎ型受光素子およびｐｉｎ型受光素子の製造方法

Also Published As

Publication number Publication date
JPS6222475B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-05-18

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