JPS5680185A - Manufacture of josephson junction element - Google Patents
Manufacture of josephson junction elementInfo
- Publication number
- JPS5680185A JPS5680185A JP15849379A JP15849379A JPS5680185A JP S5680185 A JPS5680185 A JP S5680185A JP 15849379 A JP15849379 A JP 15849379A JP 15849379 A JP15849379 A JP 15849379A JP S5680185 A JPS5680185 A JP S5680185A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resist
- josephson junction
- pattern
- junction element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 150000002500 ions Chemical class 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
PURPOSE:To enable the preparation of a junction section of a microbridge type Josephson junction element in excellent controllability by using the ionic injection of superconductive substance. CONSTITUTION:An SiO2 layer 2 is formed on an Si substrate 1, and an Nb layer 3 is made up on the SiO2 layer 2. A resist is further built up on the Nb layer 3. A pattern of the resist is formed, the Nb layer 3 is etched using the resist as a mask, the resist is removed, and a pattern of the Nb layer 3 is made up. Ions such as Nb ions are injected from a surface to form an Nb ion injection layer 7, and a Josephson junction using the layer 7 as a superconductive weak coupling section is made up. Thus, the stable pattern is built up without needing not more than 1mum photolithography, and a junction section can be prepared in excellent controllability.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15849379A JPS5680185A (en) | 1979-12-05 | 1979-12-05 | Manufacture of josephson junction element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15849379A JPS5680185A (en) | 1979-12-05 | 1979-12-05 | Manufacture of josephson junction element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5680185A true JPS5680185A (en) | 1981-07-01 |
Family
ID=15672940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15849379A Pending JPS5680185A (en) | 1979-12-05 | 1979-12-05 | Manufacture of josephson junction element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5680185A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5256897A (en) * | 1988-11-28 | 1993-10-26 | Hitachi, Ltd. | Oxide superconducting device |
WO2000016413A1 (en) * | 1998-09-14 | 2000-03-23 | Commonwealth Scientific And Industrial Research Organisation | Superconducting device |
CN104342627A (en) * | 2014-09-25 | 2015-02-11 | 昆明理工大学 | Surface strengthening treatment method for pure copper material |
-
1979
- 1979-12-05 JP JP15849379A patent/JPS5680185A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5256897A (en) * | 1988-11-28 | 1993-10-26 | Hitachi, Ltd. | Oxide superconducting device |
WO2000016413A1 (en) * | 1998-09-14 | 2000-03-23 | Commonwealth Scientific And Industrial Research Organisation | Superconducting device |
CN104342627A (en) * | 2014-09-25 | 2015-02-11 | 昆明理工大学 | Surface strengthening treatment method for pure copper material |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5673446A (en) | Manufacture of semiconductor device | |
JPS5680185A (en) | Manufacture of josephson junction element | |
JPS54136141A (en) | Magnetic bubble memory element and its manufacture | |
JPS57143826A (en) | Formation of resist pattern on gapped semiconductor substrate | |
JPS5723239A (en) | Manufacture of semiconductor device | |
JPS5528077A (en) | Production of mask | |
JPS54157478A (en) | Alignment method | |
JPS5619045A (en) | Electron beam sensitive inorganic resist | |
JPS5478980A (en) | Anisotropic etching method | |
JPS5661163A (en) | Preparation of charge connecting element | |
JPS57145327A (en) | Manufacture of semiconductor device | |
JPS5667979A (en) | Preparation method of josephson element | |
JPS5646582A (en) | Formation of pattern of filmlike article | |
JPS5626462A (en) | Resistor and the manufacturing process | |
JPS54122973A (en) | Manufacture for semiconductor device | |
JPS56162838A (en) | Manufacture of semiconductor device | |
JPS5534433A (en) | Preparation of semiconductor device | |
JPS5646581A (en) | Formation of pattern of niobium film | |
JPS5553421A (en) | Composite mask for ion etching | |
JPS577150A (en) | Manufacture of semiconductor device | |
JPS5475275A (en) | Manufacture of semiconductor device | |
JPS5591128A (en) | Formation of fine electrode pattern | |
JPS5593226A (en) | Forming method of material picture | |
JPS54122982A (en) | Manufacture for complementary mos integrated circuit device | |
JPS5621331A (en) | Manufcture of semiconductor device |