JPS5593226A - Forming method of material picture - Google Patents
Forming method of material pictureInfo
- Publication number
- JPS5593226A JPS5593226A JP143179A JP143179A JPS5593226A JP S5593226 A JPS5593226 A JP S5593226A JP 143179 A JP143179 A JP 143179A JP 143179 A JP143179 A JP 143179A JP S5593226 A JPS5593226 A JP S5593226A
- Authority
- JP
- Japan
- Prior art keywords
- film
- picture
- resist
- minute
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Abstract
PURPOSE: To obtain a minute pattern without producing an under cut in a picture by a method wherein a pair of partition walls corresponding to the width of a minute picture to be obtained is formed on a substrate, and a material film for forming the minute picture is left behind between the walls.
CONSTITUTION: Two partition walls 6 with the interval l and the width d are formed on the substrate 1 by means of a resist picture and a material film 2 for the minute picture to be obtained is applied to the whole surface. The film 2e is made to exist in the interval of the partition walls 6; the film 2f is made to exist on the wall 6; and the film 2g is made to wxist on the other area wxcept these areas on the substrate. Next thereto, the wall 6 together with the film 2f thereupon are removed by means of the resist exfoliating liquid and making use of the space produced on the site from which the wall 6 is removed, the exposed surface and the lateral face of the film 2e are wrapped in the etching resist 7. Thereafter, making this a mask, the film 2g is removed with the etching liquid capable of solving only the film 2g and the resist 7 is removed, thus making the minute picture 4 made of the film 2e remaining the disired width t.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP143179A JPS5593226A (en) | 1979-01-08 | 1979-01-08 | Forming method of material picture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP143179A JPS5593226A (en) | 1979-01-08 | 1979-01-08 | Forming method of material picture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5593226A true JPS5593226A (en) | 1980-07-15 |
Family
ID=11501255
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP143179A Pending JPS5593226A (en) | 1979-01-08 | 1979-01-08 | Forming method of material picture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5593226A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4621415A (en) * | 1985-06-14 | 1986-11-11 | Litton Systems, Inc. | Method for manufacturing low resistance sub-micron gate Schottky barrier devices |
-
1979
- 1979-01-08 JP JP143179A patent/JPS5593226A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4621415A (en) * | 1985-06-14 | 1986-11-11 | Litton Systems, Inc. | Method for manufacturing low resistance sub-micron gate Schottky barrier devices |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5593226A (en) | Forming method of material picture | |
JPS57130431A (en) | Manufacture of semiconductor device | |
JPS5313372A (en) | Formation of electrode window | |
JPS51136289A (en) | Semi-conductor producing | |
JPS53127266A (en) | Forming method of marker | |
JPS5394771A (en) | Forming method for thin film pattern | |
JPS5310265A (en) | Impurity diffusion method | |
JPS5453641A (en) | Production of mesh product having very fine mesh portion and spacer portion | |
JPS52123171A (en) | Anisotropic etching method of semiconductor single crystal | |
JPS5516423A (en) | Forming method of thick metal film pattern | |
JPS5397374A (en) | Mask producing method | |
JPS53105982A (en) | Micropattern formation method | |
JPS53118372A (en) | Pattern formation by plasma etching method | |
JPS52149982A (en) | Forming method of electrode patterns | |
JPS5378195A (en) | Manufacture of electrode panel for display | |
JPS5329086A (en) | Production of semiconductor device | |
JPS53110473A (en) | Forming method for film pattern | |
JPS57143785A (en) | Magnetic bubble memory element | |
JPS54150936A (en) | Manufacture of magnetic bubble element | |
JPS5267270A (en) | Photo etching method | |
JPS5651582A (en) | Gas etching method | |
JPS5423902A (en) | Method for manufacturing conductor | |
JPS52109372A (en) | Forming of photo resist pattern | |
JPS535566A (en) | Manufacture of fluorescent surface for color braun tube | |
JPS52126184A (en) | Preparation of semiconductor device |