JPS5621331A - Manufcture of semiconductor device - Google Patents
Manufcture of semiconductor deviceInfo
- Publication number
- JPS5621331A JPS5621331A JP9765379A JP9765379A JPS5621331A JP S5621331 A JPS5621331 A JP S5621331A JP 9765379 A JP9765379 A JP 9765379A JP 9765379 A JP9765379 A JP 9765379A JP S5621331 A JPS5621331 A JP S5621331A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- exposed portion
- phosphorus
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 5
- 229910052698 phosphorus Inorganic materials 0.000 abstract 4
- 239000011574 phosphorus Substances 0.000 abstract 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 3
- 238000000059 patterning Methods 0.000 abstract 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000001459 lithography Methods 0.000 abstract 1
- -1 phosphorus ions Chemical class 0.000 abstract 1
- 239000005360 phosphosilicate glass Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000000243 solution Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
PURPOSE:To enable the patterning of very high accuracy without side etching, by adding ion injection to lithography. CONSTITUTION:A phosphosilicate glass film 2 is coated on the surface of an Si substrate 1. A photoresist film 3 is coated on the film 2. Exposure and development are effected through a required mask to provide an opening 4 in the film 3 by patterning. The film 3 is used as a mask to inject phosphorus ions through the surface into the portion of the film 2 exposed in the opening 4. As a result, a larger amount of phosphorus is injected into the exposed portion of the film 2 than its other portion coated with the film 3 and the adhesive power of the film 3 to the other 2 is greatly heightened. Etching is then performed. Since the films 2, 3 are tightly fitted on each other, no etching solution invades in between the films. Since the exposed portion of the film 2 contains more phosphorus than its other portion, the etching speed of the exposed portion is so high that the etching of the exposed portion is completed before sides of low phosphorus content are etched.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9765379A JPS5621331A (en) | 1979-07-31 | 1979-07-31 | Manufcture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9765379A JPS5621331A (en) | 1979-07-31 | 1979-07-31 | Manufcture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5621331A true JPS5621331A (en) | 1981-02-27 |
Family
ID=14198037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9765379A Pending JPS5621331A (en) | 1979-07-31 | 1979-07-31 | Manufcture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5621331A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4723813A (en) * | 1985-08-14 | 1988-02-09 | Aprica Kassai Kabushikikaisha | Table attaching construction for nursing chairs |
US4999083A (en) * | 1988-10-02 | 1991-03-12 | Canon Kabushiki Kaisha | Method of etching crystalline material with etchant injection inlet |
-
1979
- 1979-07-31 JP JP9765379A patent/JPS5621331A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4723813A (en) * | 1985-08-14 | 1988-02-09 | Aprica Kassai Kabushikikaisha | Table attaching construction for nursing chairs |
US4999083A (en) * | 1988-10-02 | 1991-03-12 | Canon Kabushiki Kaisha | Method of etching crystalline material with etchant injection inlet |
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