JPS5679437A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5679437A
JPS5679437A JP15938379A JP15938379A JPS5679437A JP S5679437 A JPS5679437 A JP S5679437A JP 15938379 A JP15938379 A JP 15938379A JP 15938379 A JP15938379 A JP 15938379A JP S5679437 A JPS5679437 A JP S5679437A
Authority
JP
Japan
Prior art keywords
area
substrate
base
base area
projections
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15938379A
Other languages
Japanese (ja)
Other versions
JPS6222446B2 (en
Inventor
Kazumi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15938379A priority Critical patent/JPS5679437A/en
Publication of JPS5679437A publication Critical patent/JPS5679437A/en
Publication of JPS6222446B2 publication Critical patent/JPS6222446B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To reduce a mean life time of a minority of carriers by a method wherein either a projected part or a concave part is formed in a separate area of the semiconductor substrate having a plurality of active areas, abrupt variation of temperature is applied to the area so as to generate crystal latice defect by a thermal distortion. CONSTITUTION:First base area 2 is formed on the semiconductor substrate 1 forming the first emitter, a second base area 3 is formed in the first base area and further the second emitter area 4 is formed in the second base area. Then, the overall surfaces are covered by a surface protection film 9 to make an opening, one major electrode 7 is formed in the area 4, a gate electrode 8 is formed in the area 3, another major electrode 6 is formed at the back surface of the substrate 1 to make a thyrister. With this arrangement, some projections 10 enclosing a circumference of the area 5 are arranged on a separated area 5 for separating a plurality of active areas, the substrate 1 is heated abruptly at a temperature higher than 1,000 deg.C and then rapidly cooled. Due to the presence of the projections 10, the life of the area 5 is uniformly reduced throughout the circumference and the central part of the area 5.
JP15938379A 1979-12-03 1979-12-03 Manufacture of semiconductor device Granted JPS5679437A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15938379A JPS5679437A (en) 1979-12-03 1979-12-03 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15938379A JPS5679437A (en) 1979-12-03 1979-12-03 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5679437A true JPS5679437A (en) 1981-06-30
JPS6222446B2 JPS6222446B2 (en) 1987-05-18

Family

ID=15692595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15938379A Granted JPS5679437A (en) 1979-12-03 1979-12-03 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5679437A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9761474B2 (en) 2013-12-19 2017-09-12 Micron Technology, Inc. Methods for processing semiconductor devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5263077A (en) * 1975-11-19 1977-05-25 Mitsubishi Electric Corp Semiconductor element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5263077A (en) * 1975-11-19 1977-05-25 Mitsubishi Electric Corp Semiconductor element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9761474B2 (en) 2013-12-19 2017-09-12 Micron Technology, Inc. Methods for processing semiconductor devices
US10615069B2 (en) 2013-12-19 2020-04-07 Micron Technology, Inc. Semiconductor structures comprising polymeric materials

Also Published As

Publication number Publication date
JPS6222446B2 (en) 1987-05-18

Similar Documents

Publication Publication Date Title
JPS54155770A (en) Manufacture of semiconductor device
JPS5679437A (en) Manufacture of semiconductor device
JPS5678155A (en) Semiconductor device and manufacture thereof
JPS54113273A (en) Field effect-type switching element
JPS5642367A (en) Manufacture of bipolar integrated circuit
JPS56148863A (en) Manufacture of semiconductor device
JPS5654086A (en) Manufacture of semiconductor laser apparatus
JPS5638863A (en) Semiconductor device
JPS5667970A (en) Gate turn-off thyristor
GB975990A (en) Improvements relating to silicon controlled rectifiers
JPS5618466A (en) Manufacture of semiconductor device
JPS5727055A (en) Semiconductor device
JPS57130465A (en) Semiconductor device
JPS55130163A (en) Method of fabricating transistor
JPS57133672A (en) Semiconductor device
JPS5681969A (en) Manufacture of semiconductor device
JPS55162268A (en) Semiconductor device
JPS5363982A (en) Production of silicon gate type mis semiconductor
JPS55132053A (en) Manufacture of semiconductor device
JPS5489477A (en) Production of semiconductor device
JPS5674963A (en) Horizontal-type transistor
JPS5678165A (en) Manufacture of semiconductor element
JPS5651824A (en) Preparation of semiconductor device
JPS57122514A (en) Method for selective epitaxial growth
JPS5661131A (en) Manufacture of semiconductor device