JPS5651824A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5651824A
JPS5651824A JP12839779A JP12839779A JPS5651824A JP S5651824 A JPS5651824 A JP S5651824A JP 12839779 A JP12839779 A JP 12839779A JP 12839779 A JP12839779 A JP 12839779A JP S5651824 A JPS5651824 A JP S5651824A
Authority
JP
Japan
Prior art keywords
region
striation
semiconductor device
concentration profile
atom concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12839779A
Other languages
Japanese (ja)
Inventor
Kazutaka Terajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12839779A priority Critical patent/JPS5651824A/en
Publication of JPS5651824A publication Critical patent/JPS5651824A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02549—Antimonides

Abstract

PURPOSE:To permit an impurity atom concentration profile to be uniformed and an excellent active region without striation to be formed by selectively applying a laser or electron beam to a part to be an active region on a semiconductor substrate to fuse on heating. CONSTITUTION:A p type InSb monocrystalline substrate 12 having striation 11 is made from an InSb crystal ingot. Laser beams are applied to portions to be active regions on the substrate 12 to fuse and recrystallize for forming active regions each having a uniform impurity atom concentration profile. After Si ions are implanted into each region 13, a junction 14 shallower than the region 13 is formed by heat treatment. Then a lead wire 15 is connected to each junction 14 to prepare a semiconductor device having a photovoltaic element 16. Because the region 13 of the semiconductor device thus obtained has a uniform impurity atom concentration profile, a depletion layer 17 has no striation 11. Therefore, the carrier life is improved, and excellent element-characteristics can be obtained.
JP12839779A 1979-10-04 1979-10-04 Preparation of semiconductor device Pending JPS5651824A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12839779A JPS5651824A (en) 1979-10-04 1979-10-04 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12839779A JPS5651824A (en) 1979-10-04 1979-10-04 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5651824A true JPS5651824A (en) 1981-05-09

Family

ID=14983786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12839779A Pending JPS5651824A (en) 1979-10-04 1979-10-04 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5651824A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010097064A3 (en) * 2009-02-27 2010-10-21 Jenoptik Automatisierungstechnik Gmbh Laser crystallisation by irradiation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010097064A3 (en) * 2009-02-27 2010-10-21 Jenoptik Automatisierungstechnik Gmbh Laser crystallisation by irradiation

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