JPS5676559A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS5676559A JPS5676559A JP15361879A JP15361879A JPS5676559A JP S5676559 A JPS5676559 A JP S5676559A JP 15361879 A JP15361879 A JP 15361879A JP 15361879 A JP15361879 A JP 15361879A JP S5676559 A JPS5676559 A JP S5676559A
- Authority
- JP
- Japan
- Prior art keywords
- floating gate
- floating
- substrate
- gate
- gates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
- Analogue/Digital Conversion (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15361879A JPS5676559A (en) | 1979-11-29 | 1979-11-29 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15361879A JPS5676559A (en) | 1979-11-29 | 1979-11-29 | Semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5676559A true JPS5676559A (en) | 1981-06-24 |
| JPS6326554B2 JPS6326554B2 (enExample) | 1988-05-30 |
Family
ID=15566422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15361879A Granted JPS5676559A (en) | 1979-11-29 | 1979-11-29 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5676559A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990015444A1 (fr) * | 1989-06-02 | 1990-12-13 | Tadashi Shibata | Dispositif a semi-conducteurs |
| US5594372A (en) * | 1989-06-02 | 1997-01-14 | Shibata; Tadashi | Source follower using NMOS and PMOS transistors |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3046564U (ja) * | 1997-08-25 | 1998-03-10 | 秀男 松野 | 油のたれない油容器 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4872865U (enExample) * | 1971-12-14 | 1973-09-11 | ||
| JPS5012981A (enExample) * | 1973-05-21 | 1975-02-10 |
-
1979
- 1979-11-29 JP JP15361879A patent/JPS5676559A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4872865U (enExample) * | 1971-12-14 | 1973-09-11 | ||
| JPS5012981A (enExample) * | 1973-05-21 | 1975-02-10 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990015444A1 (fr) * | 1989-06-02 | 1990-12-13 | Tadashi Shibata | Dispositif a semi-conducteurs |
| US5594372A (en) * | 1989-06-02 | 1997-01-14 | Shibata; Tadashi | Source follower using NMOS and PMOS transistors |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6326554B2 (enExample) | 1988-05-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5644194A (en) | Memory device | |
| JPS5676559A (en) | Semiconductor integrated circuit | |
| EP0117874A4 (en) | SEMICONDUCTOR PHOTOELECTRIC CONVERTER. | |
| ATA509379A (de) | Halbleiteranordnung mit mindestens einem feldeffekttransistor | |
| JPS55101058A (en) | Detection circuit for operating lowest limit voltage | |
| JPS53147469A (en) | Vertical field effect transistor and production of the same | |
| JPS5596672A (en) | Semiconductor device | |
| CA930477A (en) | Multi-level integrated circuit and fabrication thereof | |
| JPS54151380A (en) | Mos transistor | |
| JPS5332681A (en) | Semiconductor device | |
| JPS53108383A (en) | Semiconductor deivce and its manufacture | |
| JPS57193065A (en) | Insulated gate field effect transistor | |
| JPS57121272A (en) | Field effect transistor | |
| JPS5573139A (en) | Semiconductor device | |
| JPS52154378A (en) | Production of mis type semiconductor device | |
| JPS56126970A (en) | Mos field effect transistor and manufacture thereof | |
| JPS5387185A (en) | Half-fixed electronic variable resistor | |
| JPS5683074A (en) | Mos integrated circuit | |
| JPS56138937A (en) | Semiconductor evaluation element | |
| JPS55153375A (en) | Non-volatile semiconductor memory device | |
| JPS5348426A (en) | Non volatile semiconductor memory | |
| JPS52129383A (en) | Mis semicnductor integrated circuit device | |
| JPS5732665A (en) | Complementary type integrated circuit | |
| JPS56153778A (en) | Mos type capacitor | |
| JPS538084A (en) | Mis type semiconductor device |