JPS5676530A - Exposure of resist - Google Patents

Exposure of resist

Info

Publication number
JPS5676530A
JPS5676530A JP15341879A JP15341879A JPS5676530A JP S5676530 A JPS5676530 A JP S5676530A JP 15341879 A JP15341879 A JP 15341879A JP 15341879 A JP15341879 A JP 15341879A JP S5676530 A JPS5676530 A JP S5676530A
Authority
JP
Japan
Prior art keywords
pattern
electron beam
region
irradiated
accuracy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15341879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6150377B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Nobuki Kawamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15341879A priority Critical patent/JPS5676530A/ja
Publication of JPS5676530A publication Critical patent/JPS5676530A/ja
Publication of JPS6150377B2 publication Critical patent/JPS6150377B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2022Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP15341879A 1979-11-27 1979-11-27 Exposure of resist Granted JPS5676530A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15341879A JPS5676530A (en) 1979-11-27 1979-11-27 Exposure of resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15341879A JPS5676530A (en) 1979-11-27 1979-11-27 Exposure of resist

Publications (2)

Publication Number Publication Date
JPS5676530A true JPS5676530A (en) 1981-06-24
JPS6150377B2 JPS6150377B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-11-04

Family

ID=15562059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15341879A Granted JPS5676530A (en) 1979-11-27 1979-11-27 Exposure of resist

Country Status (1)

Country Link
JP (1) JPS5676530A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710390U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1980-06-20 1982-01-19
JPS5766633A (en) * 1980-10-13 1982-04-22 Oki Electric Ind Co Ltd Pattern formation of fine processing resist
JPS5839015A (ja) * 1981-09-01 1983-03-07 Pioneer Electronic Corp 半導体装置の製造方法
JPS59141230A (ja) * 1983-02-02 1984-08-13 Mitsubishi Electric Corp パタ−ン形成方法
JPS6010624A (ja) * 1983-06-29 1985-01-19 Mitsubishi Electric Corp パタ−ン形成方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710390U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1980-06-20 1982-01-19
JPS5766633A (en) * 1980-10-13 1982-04-22 Oki Electric Ind Co Ltd Pattern formation of fine processing resist
JPS5839015A (ja) * 1981-09-01 1983-03-07 Pioneer Electronic Corp 半導体装置の製造方法
JPS59141230A (ja) * 1983-02-02 1984-08-13 Mitsubishi Electric Corp パタ−ン形成方法
JPS6010624A (ja) * 1983-06-29 1985-01-19 Mitsubishi Electric Corp パタ−ン形成方法

Also Published As

Publication number Publication date
JPS6150377B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-11-04

Similar Documents

Publication Publication Date Title
DE3486187D1 (de) Verfahren und vorrichtung zur herstellung von schutzlackbildern.
MY100941A (en) A process of forming a negative patern in a photoresist layer.
SE7610739L (sv) Forfarande for framstellning av plantryckformar medelst laserstralar
JPS5692536A (en) Pattern formation method
JPS5676530A (en) Exposure of resist
JPS5630129A (en) Manufacture of photomask
JPS57124436A (en) Correction of pattern defect
JPS5347825A (en) Photoresist exposure
JPS56114942A (en) High energy beam sensitive resist material and its using method
JPS56137632A (en) Pattern forming
JPS56140345A (en) Formation of pattern
JPS5712522A (en) Forming method of pattern
JPS5556629A (en) Pattern forming method
JPS55134847A (en) Manufacture of resist image
JPS5832420A (ja) 電子ビ−ム描画方法
JPS55160429A (en) Method for electron beam exposure
JPS5616129A (en) Pattern forming method
JPS55138232A (en) Drawing device
JPS56140342A (en) Image forming composition and formation of resist image
JPS5655943A (en) Pattern forming method
JPS55165631A (en) Manufacture of semiconductor device
JPS5632143A (en) Manufacture of photomask
JPS55163841A (en) Method for electron beam exposure
JPS5741637A (en) Microstep tablet
JPS5727031A (en) Formation of resist pattern