JPS567480A - Film transistor - Google Patents

Film transistor

Info

Publication number
JPS567480A
JPS567480A JP8371279A JP8371279A JPS567480A JP S567480 A JPS567480 A JP S567480A JP 8371279 A JP8371279 A JP 8371279A JP 8371279 A JP8371279 A JP 8371279A JP S567480 A JPS567480 A JP S567480A
Authority
JP
Japan
Prior art keywords
film
amorphous
layer
light barrier
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8371279A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0212031B2 (enrdf_load_stackoverflow
Inventor
Yoshinori Yukimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8371279A priority Critical patent/JPS567480A/ja
Publication of JPS567480A publication Critical patent/JPS567480A/ja
Publication of JPH0212031B2 publication Critical patent/JPH0212031B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Non-Volatile Memory (AREA)
JP8371279A 1979-06-29 1979-06-29 Film transistor Granted JPS567480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8371279A JPS567480A (en) 1979-06-29 1979-06-29 Film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8371279A JPS567480A (en) 1979-06-29 1979-06-29 Film transistor

Publications (2)

Publication Number Publication Date
JPS567480A true JPS567480A (en) 1981-01-26
JPH0212031B2 JPH0212031B2 (enrdf_load_stackoverflow) 1990-03-16

Family

ID=13810106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8371279A Granted JPS567480A (en) 1979-06-29 1979-06-29 Film transistor

Country Status (1)

Country Link
JP (1) JPS567480A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58134476A (ja) * 1982-02-05 1983-08-10 Mitsubishi Electric Corp 薄膜トランジスタ
JPS58147070A (ja) * 1982-02-25 1983-09-01 Mitsubishi Electric Corp 電界効果トランジスタの製造方法
JPS59117267A (ja) * 1982-12-24 1984-07-06 Seiko Instr & Electronics Ltd 薄膜トランジスタ
JPS59204274A (ja) * 1983-05-06 1984-11-19 Seiko Instr & Electronics Ltd 薄膜トランジスタ
US4954855A (en) * 1985-04-08 1990-09-04 Hitachi, Ltd. Thin film transistor formed on insulating substrate
US4963503A (en) * 1984-04-09 1990-10-16 Hosiden Electronics Co., Ltd. Method of manufacturing liquid crystal display device
US5844647A (en) * 1996-02-09 1998-12-01 Kabushiki Kaisha Toshiba Liquid crystal display device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226876A (en) * 1975-08-25 1977-02-28 Hewlett Packard Yokogawa Frequency detector
JPS5375784A (en) * 1976-12-16 1978-07-05 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture
JPS5375785A (en) * 1976-12-16 1978-07-05 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226876A (en) * 1975-08-25 1977-02-28 Hewlett Packard Yokogawa Frequency detector
JPS5375784A (en) * 1976-12-16 1978-07-05 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture
JPS5375785A (en) * 1976-12-16 1978-07-05 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58134476A (ja) * 1982-02-05 1983-08-10 Mitsubishi Electric Corp 薄膜トランジスタ
JPS58147070A (ja) * 1982-02-25 1983-09-01 Mitsubishi Electric Corp 電界効果トランジスタの製造方法
JPS59117267A (ja) * 1982-12-24 1984-07-06 Seiko Instr & Electronics Ltd 薄膜トランジスタ
JPS59204274A (ja) * 1983-05-06 1984-11-19 Seiko Instr & Electronics Ltd 薄膜トランジスタ
US4963503A (en) * 1984-04-09 1990-10-16 Hosiden Electronics Co., Ltd. Method of manufacturing liquid crystal display device
US4954855A (en) * 1985-04-08 1990-09-04 Hitachi, Ltd. Thin film transistor formed on insulating substrate
US5844647A (en) * 1996-02-09 1998-12-01 Kabushiki Kaisha Toshiba Liquid crystal display device

Also Published As

Publication number Publication date
JPH0212031B2 (enrdf_load_stackoverflow) 1990-03-16

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