KR970059790A - 액정표시장치의 구조 및 제조방법 - Google Patents
액정표시장치의 구조 및 제조방법 Download PDFInfo
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- KR970059790A KR970059790A KR1019960000672A KR19960000672A KR970059790A KR 970059790 A KR970059790 A KR 970059790A KR 1019960000672 A KR1019960000672 A KR 1019960000672A KR 19960000672 A KR19960000672 A KR 19960000672A KR 970059790 A KR970059790 A KR 970059790A
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 claims abstract 12
- 239000000758 substrate Substances 0.000 claims abstract 12
- 239000011347 resin Substances 0.000 claims abstract 11
- 229920005989 resin Polymers 0.000 claims abstract 11
- 239000011159 matrix material Substances 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
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- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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Abstract
본 발명은 액정 표시장치에 관한 것으로, 특히 화소와 화소 사이에 빛이 투과하지 못하도록 하는 블랙 매트릭스층을 블랙 레진(Resin)을 사용하여 형성하고 이 블랙 레진을 게이트 절연막으로 형성한 액정표시장치의 구조 및 제조방법에 관한 것이다. 이와같은 본 발명의 액정표시장치는 기판에 게이트 전극을 형성하는 단계; 화소영역을 제외한 상기 게이트 전극을 포함하는 기판상에 블랙 레진층을 형성하는 단계; 상기 블랙 레진층을 포함한 기판 전면에 게이트 절연막을 형성하는 단계; 상기 게이트 전극 상측이러 상기 게이트 절연막위에 적층된 반도체등 및 고농도 n형 반도체층을 형성하는 단계; 상기 반도체층 및 고농도 n형 반도체층 양측에 걸쳐 소오스 및 드리인 전극을 형성하는 단계; 전면에 보호막을 증착하고 상기 드레인 전극상에 콘택 홀을 형성한 후, 상기 드레인 전극에 연결되도록 화소영역에 화소 전극을 형성하는 단계를 포함하여 이루어진 것이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명의 액정표시장치의 구조 단면도, 제5도는 본맬명이러 액정표시장치의 공정 단면도.
Claims (7)
- 제1기판에 형성되는 게이트 전극; 상기 게이트 전극을 절연시키녀 빛을 차광하도록 상기 게이트 전극을 포함한 일정영역을 기판상에 형성되는 블랙 레진층; 상기 블랙 레진층을 포함한 기판 전면에 형성되는 게이트 절연막; 상기 게이트 전극 상측의 게이트 절연막위 형성되는 반도체층; 상기 반도체층 양측에 형성되는 소오스 및 드레인 전극; 상기 소오스 및 드레인 전극과 반도체층 계면에 형성되는 고농도 N형 반도체층; 그리고 상기 드레인 전극에 연결되도록 화소 영역에 형성되는 화소전극을 포함하여 구성됨을 특징으로 하는 액정표시장치의 구조.
- 제1항에 있어서, 상기 제1기판에 형성된 소오스 전극과 드레인 전극 사이의 채널 영역을 차광하도록 블랙매트릭스층이 형성된 제2기판을 더 포함하여 구성됨을 특징으로 하는 액정표시장치의 구조.
- 제1항에 있어서, 블랙레진층이 형성되는 제1기판은 소정깊이로 트렌치가 형성됨을 특징으로 하는 액정표시장치의 구조.
- 기판에 게이트 전극을 형성하는 단계; 화소영역을 제외한 상기 게이트 전극을 포함하는 기판상에 블랙레진층을 형성하는 단계; 상기 블랙 레진층을 포함한 기판 전면에 게이트 절연막을 형성하는 단계; 상기 게이트 전극 상측의 상기 게이트 절연막위에 적층된 반도체층 및 고농도 n형 반도체층을 형성하는 단계; 상기 반도체층 및 고농도 n형 반도체층 양측에 걸쳐 소오스 및 드레인 전극을 형성하는 단계; 전면에 보호막을 증착하고 상기 드레인 전극상에 콘택 홀을 형성한 후, 상기 드레인 전극에 연결되도록 화소 영역에 화소 전극을 형성하는 단계를 포함하여 이루어짐을 특징으로 하는 액정표시장치의 제조방법.
- 제4항에 있어서, 게이트 전극을 형성하기 전에 상기 블랙 레진층이 형성될 부분을 선택적으로 식각하여 트렌치를 형성하는 단계를 더 포함함을 특징으로 하는 액정표시장치의 제조방법.
- 제4항에 있어서, 블랙 레진층은 0.8~1.2um의 두께로 형성함을 특징으로 하는 액정표시장치의 제조방법.
- 제4항에 있어서, 게이트 절연막은 500~1500A의 두께로 형성함을 특징으로 하는 액정표시장치이러 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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KR1019960000672A KR100223899B1 (ko) | 1996-01-15 | 1996-01-15 | 액정표시장치의 구조 및 제조방법 |
US08/783,060 US5742365A (en) | 1996-01-15 | 1997-01-14 | Liquid crystal display device and method for manufacturing the same in which a light shielding layer is over the gate electrode or a gate electrode is in a trench |
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Application Number | Priority Date | Filing Date | Title |
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KR1019960000672A KR100223899B1 (ko) | 1996-01-15 | 1996-01-15 | 액정표시장치의 구조 및 제조방법 |
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KR970059790A true KR970059790A (ko) | 1997-08-12 |
KR100223899B1 KR100223899B1 (ko) | 1999-10-15 |
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KR1019960000672A KR100223899B1 (ko) | 1996-01-15 | 1996-01-15 | 액정표시장치의 구조 및 제조방법 |
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KR (1) | KR100223899B1 (ko) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3866783B2 (ja) | 1995-07-25 | 2007-01-10 | 株式会社 日立ディスプレイズ | 液晶表示装置 |
KR100195269B1 (ko) * | 1995-12-22 | 1999-06-15 | 윤종용 | 액정표시장치의 제조방법 |
US5866919A (en) * | 1996-04-16 | 1999-02-02 | Lg Electronics, Inc. | TFT array having planarized light shielding element |
US6275278B1 (en) | 1996-07-19 | 2001-08-14 | Hitachi, Ltd. | Liquid crystal display device and method of making same |
JP3656076B2 (ja) * | 1997-04-18 | 2005-06-02 | シャープ株式会社 | 表示装置 |
JP4302194B2 (ja) * | 1997-04-25 | 2009-07-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6208394B1 (en) * | 1997-11-27 | 2001-03-27 | Sharp Kabushiki Kaisha | LCD device and method for fabricating the same having color filters and a resinous insulating black matrix on opposite sides of a counter electrode on the same substrate |
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JP3226223B2 (ja) * | 1990-07-12 | 2001-11-05 | 株式会社東芝 | 薄膜トランジスタアレイ装置および液晶表示装置 |
JP2766563B2 (ja) * | 1991-03-27 | 1998-06-18 | シャープ株式会社 | 液晶表示装置 |
US5317432A (en) * | 1991-09-04 | 1994-05-31 | Sony Corporation | Liquid crystal display device with a capacitor and a thin film transistor in a trench for each pixel |
-
1996
- 1996-01-15 KR KR1019960000672A patent/KR100223899B1/ko active IP Right Grant
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1997
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KR100223899B1 (ko) | 1999-10-15 |
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