KR970059790A - 액정표시장치의 구조 및 제조방법 - Google Patents

액정표시장치의 구조 및 제조방법 Download PDF

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KR970059790A
KR970059790A KR1019960000672A KR19960000672A KR970059790A KR 970059790 A KR970059790 A KR 970059790A KR 1019960000672 A KR1019960000672 A KR 1019960000672A KR 19960000672 A KR19960000672 A KR 19960000672A KR 970059790 A KR970059790 A KR 970059790A
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forming
semiconductor layer
electrode
black resin
layer
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서현석
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구자홍
Lg 전자 주식회사
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Priority to US08/783,060 priority patent/US5742365A/en
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    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133512Light shielding layers, e.g. black matrix
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    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136209Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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Abstract

본 발명은 액정 표시장치에 관한 것으로, 특히 화소와 화소 사이에 빛이 투과하지 못하도록 하는 블랙 매트릭스층을 블랙 레진(Resin)을 사용하여 형성하고 이 블랙 레진을 게이트 절연막으로 형성한 액정표시장치의 구조 및 제조방법에 관한 것이다. 이와같은 본 발명의 액정표시장치는 기판에 게이트 전극을 형성하는 단계; 화소영역을 제외한 상기 게이트 전극을 포함하는 기판상에 블랙 레진층을 형성하는 단계; 상기 블랙 레진층을 포함한 기판 전면에 게이트 절연막을 형성하는 단계; 상기 게이트 전극 상측이러 상기 게이트 절연막위에 적층된 반도체등 및 고농도 n형 반도체층을 형성하는 단계; 상기 반도체층 및 고농도 n형 반도체층 양측에 걸쳐 소오스 및 드리인 전극을 형성하는 단계; 전면에 보호막을 증착하고 상기 드레인 전극상에 콘택 홀을 형성한 후, 상기 드레인 전극에 연결되도록 화소영역에 화소 전극을 형성하는 단계를 포함하여 이루어진 것이다.

Description

액정표시장치의 구조 및 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명의 액정표시장치의 구조 단면도, 제5도는 본맬명이러 액정표시장치의 공정 단면도.

Claims (7)

  1. 제1기판에 형성되는 게이트 전극; 상기 게이트 전극을 절연시키녀 빛을 차광하도록 상기 게이트 전극을 포함한 일정영역을 기판상에 형성되는 블랙 레진층; 상기 블랙 레진층을 포함한 기판 전면에 형성되는 게이트 절연막; 상기 게이트 전극 상측의 게이트 절연막위 형성되는 반도체층; 상기 반도체층 양측에 형성되는 소오스 및 드레인 전극; 상기 소오스 및 드레인 전극과 반도체층 계면에 형성되는 고농도 N형 반도체층; 그리고 상기 드레인 전극에 연결되도록 화소 영역에 형성되는 화소전극을 포함하여 구성됨을 특징으로 하는 액정표시장치의 구조.
  2. 제1항에 있어서, 상기 제1기판에 형성된 소오스 전극과 드레인 전극 사이의 채널 영역을 차광하도록 블랙매트릭스층이 형성된 제2기판을 더 포함하여 구성됨을 특징으로 하는 액정표시장치의 구조.
  3. 제1항에 있어서, 블랙레진층이 형성되는 제1기판은 소정깊이로 트렌치가 형성됨을 특징으로 하는 액정표시장치의 구조.
  4. 기판에 게이트 전극을 형성하는 단계; 화소영역을 제외한 상기 게이트 전극을 포함하는 기판상에 블랙레진층을 형성하는 단계; 상기 블랙 레진층을 포함한 기판 전면에 게이트 절연막을 형성하는 단계; 상기 게이트 전극 상측의 상기 게이트 절연막위에 적층된 반도체층 및 고농도 n형 반도체층을 형성하는 단계; 상기 반도체층 및 고농도 n형 반도체층 양측에 걸쳐 소오스 및 드레인 전극을 형성하는 단계; 전면에 보호막을 증착하고 상기 드레인 전극상에 콘택 홀을 형성한 후, 상기 드레인 전극에 연결되도록 화소 영역에 화소 전극을 형성하는 단계를 포함하여 이루어짐을 특징으로 하는 액정표시장치의 제조방법.
  5. 제4항에 있어서, 게이트 전극을 형성하기 전에 상기 블랙 레진층이 형성될 부분을 선택적으로 식각하여 트렌치를 형성하는 단계를 더 포함함을 특징으로 하는 액정표시장치의 제조방법.
  6. 제4항에 있어서, 블랙 레진층은 0.8~1.2um의 두께로 형성함을 특징으로 하는 액정표시장치의 제조방법.
  7. 제4항에 있어서, 게이트 절연막은 500~1500A의 두께로 형성함을 특징으로 하는 액정표시장치이러 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960000672A 1996-01-15 1996-01-15 액정표시장치의 구조 및 제조방법 KR100223899B1 (ko)

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KR1019960000672A KR100223899B1 (ko) 1996-01-15 1996-01-15 액정표시장치의 구조 및 제조방법
US08/783,060 US5742365A (en) 1996-01-15 1997-01-14 Liquid crystal display device and method for manufacturing the same in which a light shielding layer is over the gate electrode or a gate electrode is in a trench

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KR1019960000672A KR100223899B1 (ko) 1996-01-15 1996-01-15 액정표시장치의 구조 및 제조방법

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JP3866783B2 (ja) 1995-07-25 2007-01-10 株式会社 日立ディスプレイズ 液晶表示装置
KR100195269B1 (ko) * 1995-12-22 1999-06-15 윤종용 액정표시장치의 제조방법
US5866919A (en) * 1996-04-16 1999-02-02 Lg Electronics, Inc. TFT array having planarized light shielding element
US6275278B1 (en) 1996-07-19 2001-08-14 Hitachi, Ltd. Liquid crystal display device and method of making same
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