JPS567466A - Selffalignment semiconductor device - Google Patents

Selffalignment semiconductor device

Info

Publication number
JPS567466A
JPS567466A JP6605780A JP6605780A JPS567466A JP S567466 A JPS567466 A JP S567466A JP 6605780 A JP6605780 A JP 6605780A JP 6605780 A JP6605780 A JP 6605780A JP S567466 A JPS567466 A JP S567466A
Authority
JP
Japan
Prior art keywords
selffalignment
semiconductor device
semiconductor
selffalignment semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6605780A
Other languages
English (en)
Inventor
Shii Fuesu Jiyooji
Eichi Nin Tatsuku
Deyuannrii Tan Denii
Kaa Buiidoman Jiigufuriido
Enu Yu Wa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS567466A publication Critical patent/JPS567466A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP6605780A 1979-06-29 1980-05-20 Selffalignment semiconductor device Pending JPS567466A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/053,473 US4338622A (en) 1979-06-29 1979-06-29 Self-aligned semiconductor circuits and process therefor

Publications (1)

Publication Number Publication Date
JPS567466A true JPS567466A (en) 1981-01-26

Family

ID=21984500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6605780A Pending JPS567466A (en) 1979-06-29 1980-05-20 Selffalignment semiconductor device

Country Status (4)

Country Link
US (1) US4338622A (ja)
EP (1) EP0021403B1 (ja)
JP (1) JPS567466A (ja)
DE (1) DE3064247D1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56115560A (en) * 1980-02-18 1981-09-10 Toshiba Corp Manufacture of semiconductor device
JPS57103352A (en) * 1980-10-29 1982-06-26 Fairchild Camera Instr Co Method of producing self-matching type integrated circuit structure using oxide growing difference
JPS57143862A (en) * 1981-02-27 1982-09-06 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS586163A (ja) * 1981-07-03 1983-01-13 Toshiba Corp 半導体装置の製造方法
JPS59114861A (ja) * 1982-12-21 1984-07-03 Nec Corp 半導体装置

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4512075A (en) * 1980-08-04 1985-04-23 Fairchild Camera & Instrument Corporation Method of making an integrated injection logic cell having self-aligned collector and base reduced resistance utilizing selective diffusion from polycrystalline regions
NL8103031A (nl) * 1980-08-04 1982-03-01 Fairchild Camera Instr Co Werkwijze voor het vervaardigen van een geintegreerde logische injectiecel met zelfgecentreerde collector en basis en gereduceerde basisweerstand en cel vervaardigd volgens deze werkwijze.
US4539742A (en) * 1981-06-22 1985-09-10 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
JPS5946065A (ja) * 1982-09-09 1984-03-15 Toshiba Corp 半導体装置の製造方法
DE3467953D1 (en) * 1983-04-21 1988-01-14 Toshiba Kk Semiconductor device having an element isolation layer and method of manufacturing the same
US4752817A (en) * 1983-08-26 1988-06-21 International Business Machines Corporation High performance integrated circuit having modified extrinsic base
US4860086A (en) * 1983-08-30 1989-08-22 Hitachi, Ltd. Semiconductor device
US4933295A (en) * 1987-05-08 1990-06-12 Raytheon Company Method of forming a bipolar transistor having closely spaced device regions
US4772566A (en) * 1987-07-01 1988-09-20 Motorola Inc. Single tub transistor means and method
GB8729417D0 (en) * 1987-12-17 1988-02-03 Plessey Co Plc Logic gate
JP2859288B2 (ja) 1989-03-20 1999-02-17 株式会社日立製作所 半導体集積回路装置及びその製造方法
DE69107779T2 (de) * 1990-10-31 1995-09-21 Ibm Transistor mit selbstjustierender epitaxialer Basis und dessen Herstellungsverfahren.
JP2570148B2 (ja) * 1993-10-28 1997-01-08 日本電気株式会社 半導体装置
JPH08213475A (ja) * 1995-02-07 1996-08-20 Mitsubishi Electric Corp 半導体装置とその製造方法
JP3489265B2 (ja) * 1995-05-19 2004-01-19 ソニー株式会社 半導体装置の製法
US6483736B2 (en) 1998-11-16 2002-11-19 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US8575719B2 (en) 2000-04-28 2013-11-05 Sandisk 3D Llc Silicon nitride antifuse for use in diode-antifuse memory arrays
US20040108573A1 (en) * 2002-03-13 2004-06-10 Matrix Semiconductor, Inc. Use in semiconductor devices of dielectric antifuses grown on silicide
US8338906B2 (en) * 2008-01-30 2012-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Schottky device
MY184638A (en) 2015-12-15 2021-04-13 Alcon Inc Method for applying stable coating on silicone hydrogel contact lenses

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50152682A (ja) * 1974-04-26 1975-12-08
JPS5283080A (en) * 1975-12-29 1977-07-11 Philips Nv Ic and method of producing same
JPS5283081A (en) * 1975-12-29 1977-07-11 Philips Nv Semiconductor device and method of producing same
JPS53118985A (en) * 1977-03-28 1978-10-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2021824C3 (de) * 1970-05-05 1980-08-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische Halbleiterschaltung
US3993513A (en) * 1974-10-29 1976-11-23 Fairchild Camera And Instrument Corporation Combined method for fabricating oxide-isolated vertical bipolar transistors and complementary oxide-isolated lateral bipolar transistors and the resulting structures
US3962717A (en) * 1974-10-29 1976-06-08 Fairchild Camera And Instrument Corporation Oxide isolated integrated injection logic with selective guard ring
US3982266A (en) * 1974-12-09 1976-09-21 Texas Instruments Incorporated Integrated injection logic having high inverse current gain
US4151019A (en) * 1974-12-27 1979-04-24 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques
US4160989A (en) * 1975-12-29 1979-07-10 U.S. Philips Corporation Integrated circuit having complementary bipolar transistors
DE2652103C2 (de) * 1976-11-16 1982-10-28 Ibm Deutschland Gmbh, 7000 Stuttgart Integrierte Halbleiteranordnung für ein logisches Schaltungskonzept und Verfahren zu ihrer Herstellung
FR2404962A1 (fr) * 1977-09-28 1979-04-27 Ibm France Dispositif semi-conducteur du genre cellule bistable en technologie a injection de courant, commandee par l'injecteur
US4160991A (en) * 1977-10-25 1979-07-10 International Business Machines Corporation High performance bipolar device and method for making same
US4190466A (en) * 1977-12-22 1980-02-26 International Business Machines Corporation Method for making a bipolar transistor structure utilizing self-passivating diffusion sources
US4231051A (en) * 1978-06-06 1980-10-28 Rockwell International Corporation Process for producing minimal geometry devices for VSLI applications utilizing self-aligned gates and self-aligned contacts, and resultant structures
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50152682A (ja) * 1974-04-26 1975-12-08
JPS5283080A (en) * 1975-12-29 1977-07-11 Philips Nv Ic and method of producing same
JPS5283081A (en) * 1975-12-29 1977-07-11 Philips Nv Semiconductor device and method of producing same
JPS53118985A (en) * 1977-03-28 1978-10-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56115560A (en) * 1980-02-18 1981-09-10 Toshiba Corp Manufacture of semiconductor device
JPS6161540B2 (ja) * 1980-02-18 1986-12-26 Tokyo Shibaura Electric Co
JPS57103352A (en) * 1980-10-29 1982-06-26 Fairchild Camera Instr Co Method of producing self-matching type integrated circuit structure using oxide growing difference
JPS57143862A (en) * 1981-02-27 1982-09-06 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS6232628B2 (ja) * 1981-02-27 1987-07-15 Tokyo Shibaura Electric Co
JPS586163A (ja) * 1981-07-03 1983-01-13 Toshiba Corp 半導体装置の製造方法
JPS59114861A (ja) * 1982-12-21 1984-07-03 Nec Corp 半導体装置

Also Published As

Publication number Publication date
EP0021403A1 (en) 1981-01-07
DE3064247D1 (en) 1983-08-25
EP0021403B1 (en) 1983-07-20
US4338622A (en) 1982-07-06

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