JPS566471A - Field effect type thyristor - Google Patents
Field effect type thyristorInfo
- Publication number
- JPS566471A JPS566471A JP8239579A JP8239579A JPS566471A JP S566471 A JPS566471 A JP S566471A JP 8239579 A JP8239579 A JP 8239579A JP 8239579 A JP8239579 A JP 8239579A JP S566471 A JPS566471 A JP S566471A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- layers
- buried
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8239579A JPS566471A (en) | 1979-06-28 | 1979-06-28 | Field effect type thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8239579A JPS566471A (en) | 1979-06-28 | 1979-06-28 | Field effect type thyristor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS566471A true JPS566471A (en) | 1981-01-23 |
JPS6245710B2 JPS6245710B2 (ja) | 1987-09-28 |
Family
ID=13773390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8239579A Granted JPS566471A (en) | 1979-06-28 | 1979-06-28 | Field effect type thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS566471A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4482907A (en) * | 1981-03-10 | 1984-11-13 | Thomson-Csf | Planar-type field-effect transistor having metallized-well electrodes and a method of fabrication of said transistor |
JPS6077463A (ja) * | 1983-10-05 | 1985-05-02 | Toyo Electric Mfg Co Ltd | 静電誘導サイリスタ及びその製造方法 |
US4586240A (en) * | 1982-06-24 | 1986-05-06 | Rca Corporation | Vertical IGFET with internal gate and method for making same |
US4654679A (en) * | 1983-10-05 | 1987-03-31 | Toyo Denki Seizo Kabushiki Kaisha | Static induction thyristor with stepped-doping gate region |
US4914043A (en) * | 1986-09-26 | 1990-04-03 | Zaidan Hojin Handotai Kenkyu Shinkokai | Method of making an integrated light-triggered and light-quenched static induction thyristor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5619749A (en) * | 1979-07-26 | 1981-02-24 | Toto Ltd | Building blank |
JPS6132828A (ja) * | 1984-07-25 | 1986-02-15 | Konishiroku Photo Ind Co Ltd | 二焦点式カメラ |
-
1979
- 1979-06-28 JP JP8239579A patent/JPS566471A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5619749A (en) * | 1979-07-26 | 1981-02-24 | Toto Ltd | Building blank |
JPS6132828A (ja) * | 1984-07-25 | 1986-02-15 | Konishiroku Photo Ind Co Ltd | 二焦点式カメラ |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4482907A (en) * | 1981-03-10 | 1984-11-13 | Thomson-Csf | Planar-type field-effect transistor having metallized-well electrodes and a method of fabrication of said transistor |
US4586240A (en) * | 1982-06-24 | 1986-05-06 | Rca Corporation | Vertical IGFET with internal gate and method for making same |
JPS6077463A (ja) * | 1983-10-05 | 1985-05-02 | Toyo Electric Mfg Co Ltd | 静電誘導サイリスタ及びその製造方法 |
US4654679A (en) * | 1983-10-05 | 1987-03-31 | Toyo Denki Seizo Kabushiki Kaisha | Static induction thyristor with stepped-doping gate region |
JPH0329190B2 (ja) * | 1983-10-05 | 1991-04-23 | Toyo Electric Mfg Co Ltd | |
US4914043A (en) * | 1986-09-26 | 1990-04-03 | Zaidan Hojin Handotai Kenkyu Shinkokai | Method of making an integrated light-triggered and light-quenched static induction thyristor |
Also Published As
Publication number | Publication date |
---|---|
JPS6245710B2 (ja) | 1987-09-28 |
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