JPS558070A - Manufacture of semiconductor - Google Patents

Manufacture of semiconductor

Info

Publication number
JPS558070A
JPS558070A JP8115978A JP8115978A JPS558070A JP S558070 A JPS558070 A JP S558070A JP 8115978 A JP8115978 A JP 8115978A JP 8115978 A JP8115978 A JP 8115978A JP S558070 A JPS558070 A JP S558070A
Authority
JP
Japan
Prior art keywords
type
range
base
corrector
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8115978A
Other languages
Japanese (ja)
Inventor
Mitsuharu Morishita
Shiro Iwatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8115978A priority Critical patent/JPS558070A/en
Priority to GB7918437A priority patent/GB2023340B/en
Priority to US06/043,873 priority patent/US4239558A/en
Priority to FR7914002A priority patent/FR2427687A1/en
Priority to DE19792922259 priority patent/DE2922259A1/en
Publication of JPS558070A publication Critical patent/JPS558070A/en
Priority to MY674/85A priority patent/MY8500674A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: For providing a high voltage resistance, to ensure the use of thick epitaxial layer by forming large and small power transistors separately from each other, and the separator and corrector ranges of a small signal element, the latter too at the same time as the formation of the base and emitter ranges of a large power element.
CONSTITUTION: A P--type layer 3 is expitaxially bred on a P+-type semiconductor substrate 20, and the N+-type base range 21 of a large power transistor and the N+-type separation range 22 of small signal transistors are diffusedly formed at a time. Next, N-type base and emitter ranges 6 and 7 are provided in a range 24 by diffusedly forming the P+-type emitter range 23 of a large power transistor and the P+-type corrector range 24 of a small signal transistor simultaneously. Thereafter, corrector, base and emitter electrodes 25 W 27 are fitted on said large power transistor, and a separator electrode 28, as well as corrector, base and emitter electrodes 9 W 11 on said small power transistor.
COPYRIGHT: (C)1980,JPO&Japio
JP8115978A 1978-06-01 1978-07-03 Manufacture of semiconductor Pending JPS558070A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP8115978A JPS558070A (en) 1978-07-03 1978-07-03 Manufacture of semiconductor
GB7918437A GB2023340B (en) 1978-06-01 1979-05-25 Integrated circuits
US06/043,873 US4239558A (en) 1978-06-01 1979-05-30 Method of manufacturing semiconductor devices utilizing epitaxial deposition and triple diffusion
FR7914002A FR2427687A1 (en) 1978-06-01 1979-05-31 SEMICONDUCTOR DEVICES CONTAINING AT LEAST ONE POWER TRANSISTOR AND ONE SERIES OF TRANSISTORS FOR WEAK SIGNALS
DE19792922259 DE2922259A1 (en) 1978-06-01 1979-05-31 METHOD OF MANUFACTURING A SEMICONDUCTOR ARRANGEMENT
MY674/85A MY8500674A (en) 1978-06-01 1985-12-30 Method of manufacturing semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8115978A JPS558070A (en) 1978-07-03 1978-07-03 Manufacture of semiconductor

Publications (1)

Publication Number Publication Date
JPS558070A true JPS558070A (en) 1980-01-21

Family

ID=13738657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8115978A Pending JPS558070A (en) 1978-06-01 1978-07-03 Manufacture of semiconductor

Country Status (1)

Country Link
JP (1) JPS558070A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022664A (en) * 1987-12-22 1990-01-08 Sgs Thomson Microelettronica Spa Semiconductor device and its manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022664A (en) * 1987-12-22 1990-01-08 Sgs Thomson Microelettronica Spa Semiconductor device and its manufacture

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