JPS566428A - Epitaxial growth apparatus - Google Patents

Epitaxial growth apparatus

Info

Publication number
JPS566428A
JPS566428A JP8238779A JP8238779A JPS566428A JP S566428 A JPS566428 A JP S566428A JP 8238779 A JP8238779 A JP 8238779A JP 8238779 A JP8238779 A JP 8238779A JP S566428 A JPS566428 A JP S566428A
Authority
JP
Japan
Prior art keywords
base
gas
wafer
rotation
gas introduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8238779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6329405B2 (enFirst
Inventor
Nobuyuki Asaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP8238779A priority Critical patent/JPS566428A/ja
Publication of JPS566428A publication Critical patent/JPS566428A/ja
Publication of JPS6329405B2 publication Critical patent/JPS6329405B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP8238779A 1979-06-28 1979-06-28 Epitaxial growth apparatus Granted JPS566428A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8238779A JPS566428A (en) 1979-06-28 1979-06-28 Epitaxial growth apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8238779A JPS566428A (en) 1979-06-28 1979-06-28 Epitaxial growth apparatus

Publications (2)

Publication Number Publication Date
JPS566428A true JPS566428A (en) 1981-01-23
JPS6329405B2 JPS6329405B2 (enFirst) 1988-06-14

Family

ID=13773163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8238779A Granted JPS566428A (en) 1979-06-28 1979-06-28 Epitaxial growth apparatus

Country Status (1)

Country Link
JP (1) JPS566428A (enFirst)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61199629A (ja) * 1985-03-01 1986-09-04 Hitachi Ltd 半導体のエピタキシヤル成長装置
EP0164928A3 (en) * 1984-06-04 1987-07-29 Texas Instruments Incorporated Vertical hot wall cvd reactor
JPS6361119U (enFirst) * 1986-10-09 1988-04-22
WO1995008185A1 (en) * 1993-09-16 1995-03-23 Tokyo Electron Limited Film forming device
KR100536025B1 (ko) * 1998-10-13 2006-03-20 삼성전자주식회사 웨이퍼 보트
CN103160806A (zh) * 2011-12-14 2013-06-19 北京北方微电子基地设备工艺研究中心有限责任公司 进气系统、腔室装置和基片处理设备
US8658951B2 (en) 2008-10-23 2014-02-25 Tokyo Electron Limited Heat treatment apparatus
US8674273B2 (en) 2008-09-04 2014-03-18 Tokyo Electron Limited Heat treatment apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0223801U (enFirst) * 1988-08-01 1990-02-16

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0164928A3 (en) * 1984-06-04 1987-07-29 Texas Instruments Incorporated Vertical hot wall cvd reactor
JPS61199629A (ja) * 1985-03-01 1986-09-04 Hitachi Ltd 半導体のエピタキシヤル成長装置
JPS6361119U (enFirst) * 1986-10-09 1988-04-22
WO1995008185A1 (en) * 1993-09-16 1995-03-23 Tokyo Electron Limited Film forming device
KR100536025B1 (ko) * 1998-10-13 2006-03-20 삼성전자주식회사 웨이퍼 보트
US8674273B2 (en) 2008-09-04 2014-03-18 Tokyo Electron Limited Heat treatment apparatus
US8658951B2 (en) 2008-10-23 2014-02-25 Tokyo Electron Limited Heat treatment apparatus
CN103160806A (zh) * 2011-12-14 2013-06-19 北京北方微电子基地设备工艺研究中心有限责任公司 进气系统、腔室装置和基片处理设备
CN103160806B (zh) * 2011-12-14 2015-12-02 北京北方微电子基地设备工艺研究中心有限责任公司 进气系统、腔室装置和基片处理设备

Also Published As

Publication number Publication date
JPS6329405B2 (enFirst) 1988-06-14

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