JPS5618415A - Apparatus for epitaxial growth - Google Patents

Apparatus for epitaxial growth

Info

Publication number
JPS5618415A
JPS5618415A JP9437379A JP9437379A JPS5618415A JP S5618415 A JPS5618415 A JP S5618415A JP 9437379 A JP9437379 A JP 9437379A JP 9437379 A JP9437379 A JP 9437379A JP S5618415 A JPS5618415 A JP S5618415A
Authority
JP
Japan
Prior art keywords
gas
wafers
introducing holes
reacting
sequentially
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9437379A
Other languages
Japanese (ja)
Inventor
Nobuyuki Asaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP9437379A priority Critical patent/JPS5618415A/en
Publication of JPS5618415A publication Critical patent/JPS5618415A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To grow a uniform epitaxial layer by arranging many wafers in the longitudinal direction in a horizontal reacting tube, providing a plurality of reacting- gas introducing holes around the wafers, and sequentially supplying the gas into said introducing holes. CONSTITUTION:Wafers 7 are placed one by one on both sides on disk shaped susceptors 31 which are provided in a horizontal reacting tube 1, with an equal distance being provided inbetween. A plurality of gas introducing holes 4 are provided around said susceptors 31 with an equal distance being provided, and supply valves 10 are attached to the gas introducing holes 4, respectivly. The supply valves 10 are opened and closed sequentially, thereby the gas is supplied into the reacting tube 1. For example, the valves are sequentially opened and closed at every 0.5-4.0sec. In this method, since the gas stream is circulated, a mechanism to rotate the wafers 7 is not required, and the apparatus wherein hermetical sealing is readily made and the diameter of the reacting tube is small can be obtained.
JP9437379A 1979-07-24 1979-07-24 Apparatus for epitaxial growth Pending JPS5618415A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9437379A JPS5618415A (en) 1979-07-24 1979-07-24 Apparatus for epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9437379A JPS5618415A (en) 1979-07-24 1979-07-24 Apparatus for epitaxial growth

Publications (1)

Publication Number Publication Date
JPS5618415A true JPS5618415A (en) 1981-02-21

Family

ID=14108505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9437379A Pending JPS5618415A (en) 1979-07-24 1979-07-24 Apparatus for epitaxial growth

Country Status (1)

Country Link
JP (1) JPS5618415A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6258639A (en) * 1985-05-17 1987-03-14 マイテル・コ−ポレ−シヨン Chemical evaporating apparatus and method
EP0308946A2 (en) * 1987-09-22 1989-03-29 Nec Corporation Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6258639A (en) * 1985-05-17 1987-03-14 マイテル・コ−ポレ−シヨン Chemical evaporating apparatus and method
JPH0728963U (en) * 1985-05-17 1995-05-30 マイテル・コーポレーション Chemical vapor deposition equipment
EP0308946A2 (en) * 1987-09-22 1989-03-29 Nec Corporation Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness

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