JPS5661139A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5661139A
JPS5661139A JP13805579A JP13805579A JPS5661139A JP S5661139 A JPS5661139 A JP S5661139A JP 13805579 A JP13805579 A JP 13805579A JP 13805579 A JP13805579 A JP 13805579A JP S5661139 A JPS5661139 A JP S5661139A
Authority
JP
Japan
Prior art keywords
mask
well
sio2
type
matching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13805579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6315744B2 (cg-RX-API-DMAC10.html
Inventor
Toshihiko Mano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP13805579A priority Critical patent/JPS5661139A/ja
Publication of JPS5661139A publication Critical patent/JPS5661139A/ja
Publication of JPS6315744B2 publication Critical patent/JPS6315744B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0126—
    • H10W10/13—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP13805579A 1979-10-25 1979-10-25 Manufacture of semiconductor device Granted JPS5661139A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13805579A JPS5661139A (en) 1979-10-25 1979-10-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13805579A JPS5661139A (en) 1979-10-25 1979-10-25 Manufacture of semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP644889A Division JPH01230247A (ja) 1989-01-13 1989-01-13 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5661139A true JPS5661139A (en) 1981-05-26
JPS6315744B2 JPS6315744B2 (cg-RX-API-DMAC10.html) 1988-04-06

Family

ID=15212921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13805579A Granted JPS5661139A (en) 1979-10-25 1979-10-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5661139A (cg-RX-API-DMAC10.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56118366A (en) * 1980-02-22 1981-09-17 Hitachi Ltd Preparation of semiconductor device
US5019526A (en) * 1988-09-26 1991-05-28 Nippondenso Co., Ltd. Method of manufacturing a semiconductor device having a plurality of elements
US5132241A (en) * 1991-04-15 1992-07-21 Industrial Technology Research Institute Method of manufacturing minimum counterdoping in twin well process
US5219768A (en) * 1989-05-10 1993-06-15 Oki Electric Industry Co., Ltd. Method for fabricating a semiconductor device
US5350491A (en) * 1992-09-18 1994-09-27 Advanced Micro Devices, Inc. Oxide removal method for improvement of subsequently grown oxides for a twin-tub CMOS process

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979189A (cg-RX-API-DMAC10.html) * 1972-11-01 1974-07-31
JPS51113476A (en) * 1975-03-31 1976-10-06 Fujitsu Ltd Semiconductor device manufacturing system
JPS5292489A (en) * 1976-01-30 1977-08-03 Hitachi Ltd Manufacture of c-mis semiconductor
JPS52119085A (en) * 1976-03-10 1977-10-06 Nec Corp Semiconductor memory element
JPS5323557A (en) * 1976-08-18 1978-03-04 Hitachi Ltd Electronic lens
JPS5485976U (cg-RX-API-DMAC10.html) * 1977-11-30 1979-06-18

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979189A (cg-RX-API-DMAC10.html) * 1972-11-01 1974-07-31
JPS51113476A (en) * 1975-03-31 1976-10-06 Fujitsu Ltd Semiconductor device manufacturing system
JPS5292489A (en) * 1976-01-30 1977-08-03 Hitachi Ltd Manufacture of c-mis semiconductor
JPS52119085A (en) * 1976-03-10 1977-10-06 Nec Corp Semiconductor memory element
JPS5323557A (en) * 1976-08-18 1978-03-04 Hitachi Ltd Electronic lens
JPS5485976U (cg-RX-API-DMAC10.html) * 1977-11-30 1979-06-18

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56118366A (en) * 1980-02-22 1981-09-17 Hitachi Ltd Preparation of semiconductor device
US5019526A (en) * 1988-09-26 1991-05-28 Nippondenso Co., Ltd. Method of manufacturing a semiconductor device having a plurality of elements
US5219768A (en) * 1989-05-10 1993-06-15 Oki Electric Industry Co., Ltd. Method for fabricating a semiconductor device
US5132241A (en) * 1991-04-15 1992-07-21 Industrial Technology Research Institute Method of manufacturing minimum counterdoping in twin well process
US5350491A (en) * 1992-09-18 1994-09-27 Advanced Micro Devices, Inc. Oxide removal method for improvement of subsequently grown oxides for a twin-tub CMOS process

Also Published As

Publication number Publication date
JPS6315744B2 (cg-RX-API-DMAC10.html) 1988-04-06

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