JPS6315744B2 - - Google Patents

Info

Publication number
JPS6315744B2
JPS6315744B2 JP54138055A JP13805579A JPS6315744B2 JP S6315744 B2 JPS6315744 B2 JP S6315744B2 JP 54138055 A JP54138055 A JP 54138055A JP 13805579 A JP13805579 A JP 13805579A JP S6315744 B2 JPS6315744 B2 JP S6315744B2
Authority
JP
Japan
Prior art keywords
conductivity type
type well
well region
insulating film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54138055A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5661139A (en
Inventor
Toshihiko Mano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP13805579A priority Critical patent/JPS5661139A/ja
Publication of JPS5661139A publication Critical patent/JPS5661139A/ja
Publication of JPS6315744B2 publication Critical patent/JPS6315744B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0126—
    • H10W10/13—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP13805579A 1979-10-25 1979-10-25 Manufacture of semiconductor device Granted JPS5661139A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13805579A JPS5661139A (en) 1979-10-25 1979-10-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13805579A JPS5661139A (en) 1979-10-25 1979-10-25 Manufacture of semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP644889A Division JPH01230247A (ja) 1989-01-13 1989-01-13 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5661139A JPS5661139A (en) 1981-05-26
JPS6315744B2 true JPS6315744B2 (cg-RX-API-DMAC10.html) 1988-04-06

Family

ID=15212921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13805579A Granted JPS5661139A (en) 1979-10-25 1979-10-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5661139A (cg-RX-API-DMAC10.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56118366A (en) * 1980-02-22 1981-09-17 Hitachi Ltd Preparation of semiconductor device
US5019526A (en) * 1988-09-26 1991-05-28 Nippondenso Co., Ltd. Method of manufacturing a semiconductor device having a plurality of elements
WO1990013916A1 (fr) * 1989-05-10 1990-11-15 Oki Electric Industry Co., Ltd. Procede de production de dispositifs a semi-conducteurs
US5132241A (en) * 1991-04-15 1992-07-21 Industrial Technology Research Institute Method of manufacturing minimum counterdoping in twin well process
US5350491A (en) * 1992-09-18 1994-09-27 Advanced Micro Devices, Inc. Oxide removal method for improvement of subsequently grown oxides for a twin-tub CMOS process

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821781A (en) * 1972-11-01 1974-06-28 Ibm Complementary field effect transistors having p doped silicon gates
JPS51113476A (en) * 1975-03-31 1976-10-06 Fujitsu Ltd Semiconductor device manufacturing system
JPS5292489A (en) * 1976-01-30 1977-08-03 Hitachi Ltd Manufacture of c-mis semiconductor
JPS52119085A (en) * 1976-03-10 1977-10-06 Nec Corp Semiconductor memory element
JPS5323557A (en) * 1976-08-18 1978-03-04 Hitachi Ltd Electronic lens
JPS5485976U (cg-RX-API-DMAC10.html) * 1977-11-30 1979-06-18

Also Published As

Publication number Publication date
JPS5661139A (en) 1981-05-26

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