JPS5660030A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5660030A
JPS5660030A JP13625479A JP13625479A JPS5660030A JP S5660030 A JPS5660030 A JP S5660030A JP 13625479 A JP13625479 A JP 13625479A JP 13625479 A JP13625479 A JP 13625479A JP S5660030 A JPS5660030 A JP S5660030A
Authority
JP
Japan
Prior art keywords
layer
barrier layer
substrate
etching
punch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13625479A
Other languages
English (en)
Inventor
Masao Obara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13625479A priority Critical patent/JPS5660030A/ja
Publication of JPS5660030A publication Critical patent/JPS5660030A/ja
Pending legal-status Critical Current

Links

JP13625479A 1979-10-22 1979-10-22 Manufacture of semiconductor device Pending JPS5660030A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13625479A JPS5660030A (en) 1979-10-22 1979-10-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13625479A JPS5660030A (en) 1979-10-22 1979-10-22 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5660030A true JPS5660030A (en) 1981-05-23

Family

ID=15170876

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13625479A Pending JPS5660030A (en) 1979-10-22 1979-10-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5660030A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140847A (ja) * 1983-12-28 1985-07-25 Fujitsu Ltd 半導体装置
US5371041A (en) * 1988-02-11 1994-12-06 Sgs-Thomson Microelectronics, Inc. Method for forming a contact/VIA
EP1065707A1 (en) * 1999-06-23 2001-01-03 Intersil Corporation Integrated high and low resistance contacts
DE19751785B4 (de) * 1996-11-22 2004-08-05 Trikon Equipments Ltd., Newport Verfahren zum Behandeln eines Halbleiter-Wafers
WO2010143376A1 (ja) * 2009-06-09 2010-12-16 パナソニック株式会社 半導体装置およびその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140847A (ja) * 1983-12-28 1985-07-25 Fujitsu Ltd 半導体装置
JPH0441498B2 (ja) * 1983-12-28 1992-07-08 Fujitsu Ltd
US5371041A (en) * 1988-02-11 1994-12-06 Sgs-Thomson Microelectronics, Inc. Method for forming a contact/VIA
DE19751785B4 (de) * 1996-11-22 2004-08-05 Trikon Equipments Ltd., Newport Verfahren zum Behandeln eines Halbleiter-Wafers
EP1065707A1 (en) * 1999-06-23 2001-01-03 Intersil Corporation Integrated high and low resistance contacts
US6403472B1 (en) 1999-06-23 2002-06-11 Harris Corporation Method of forming resistive contacts on intergrated circuits with mobility spoiling ions including high resistive contacts and low resistivity silicide contacts
US6667523B2 (en) 1999-06-23 2003-12-23 Intersil Americas Inc. Highly linear integrated resistive contact
WO2010143376A1 (ja) * 2009-06-09 2010-12-16 パナソニック株式会社 半導体装置およびその製造方法

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