JPS5656643A - Treating device for semiconductor substrate - Google Patents

Treating device for semiconductor substrate

Info

Publication number
JPS5656643A
JPS5656643A JP13219579A JP13219579A JPS5656643A JP S5656643 A JPS5656643 A JP S5656643A JP 13219579 A JP13219579 A JP 13219579A JP 13219579 A JP13219579 A JP 13219579A JP S5656643 A JPS5656643 A JP S5656643A
Authority
JP
Japan
Prior art keywords
chamber
vapor
comes
reproducibility
balancing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13219579A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0132653B2 (enExample
Inventor
Jiro Kasahara
Shozo Watabe
Kenji Morisane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP13219579A priority Critical patent/JPS5656643A/ja
Publication of JPS5656643A publication Critical patent/JPS5656643A/ja
Publication of JPH0132653B2 publication Critical patent/JPH0132653B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP13219579A 1979-10-13 1979-10-13 Treating device for semiconductor substrate Granted JPS5656643A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13219579A JPS5656643A (en) 1979-10-13 1979-10-13 Treating device for semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13219579A JPS5656643A (en) 1979-10-13 1979-10-13 Treating device for semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS5656643A true JPS5656643A (en) 1981-05-18
JPH0132653B2 JPH0132653B2 (enExample) 1989-07-10

Family

ID=15075611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13219579A Granted JPS5656643A (en) 1979-10-13 1979-10-13 Treating device for semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5656643A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143520A (ja) * 1982-02-22 1983-08-26 Toshiba Corp 半導体結晶の熱処理方法
US4626883A (en) * 1985-06-27 1986-12-02 International Business Machines Corporation Textured crystal picosecond photoresponsive element
JPS6286830A (ja) * 1985-10-14 1987-04-21 Nippon Mining Co Ltd 化合物半導体の熱処理用器具

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5144378A (en) * 1974-08-19 1976-04-15 Chayo Ie Jooji Ryutainobaitaikarabunsanbutsushitsuo bunrisuruhohotosochi
JPS5384582A (en) * 1976-12-29 1978-07-26 Fujitsu Ltd Manufacture for light emitting element
JPS5390861A (en) * 1977-01-21 1978-08-10 Sharp Corp Manufacture of semiconductor element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5144378A (en) * 1974-08-19 1976-04-15 Chayo Ie Jooji Ryutainobaitaikarabunsanbutsushitsuo bunrisuruhohotosochi
JPS5384582A (en) * 1976-12-29 1978-07-26 Fujitsu Ltd Manufacture for light emitting element
JPS5390861A (en) * 1977-01-21 1978-08-10 Sharp Corp Manufacture of semiconductor element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143520A (ja) * 1982-02-22 1983-08-26 Toshiba Corp 半導体結晶の熱処理方法
US4626883A (en) * 1985-06-27 1986-12-02 International Business Machines Corporation Textured crystal picosecond photoresponsive element
JPS6286830A (ja) * 1985-10-14 1987-04-21 Nippon Mining Co Ltd 化合物半導体の熱処理用器具

Also Published As

Publication number Publication date
JPH0132653B2 (enExample) 1989-07-10

Similar Documents

Publication Publication Date Title
JPS5588323A (en) Manufacture of semiconductor device
JPS5656643A (en) Treating device for semiconductor substrate
JPS58153332A (ja) ドライエツチング装置
JPS5737824A (en) Method and device for impurity diffusion
JPS62140413A (ja) 縦型拡散装置
JPS56162841A (en) Forming method for insulating film of compound semiconductor
GB1115101A (en) Improvements in or relating to the manufacture of semiconductor bodies
US4820656A (en) Method for producing a p-doped semiconductor region in an n-conductive semiconductor body
JPS5710242A (en) Manufacture of semiconductor device
JPS57118635A (en) Manufacture of semiconductor device
JPS57159019A (en) Impurity diffusing method for semiconductor substrate
CS200145B1 (en) Method of manufacture of quickly connecting semiconductor elements
JPH04165621A (ja) 酸化膜の形成方法及びその形成装置
JPS57118636A (en) Manufacture of semiconductor device
JPH0547685A (ja) 半導体ウエハへの不純物拡散方法
JPS57194522A (en) Thermal treatment of semiconductor wafer
JPS6468951A (en) Manufacture of semiconductor device
JPS5613720A (en) Heat treating device
JPS5736830A (ja) Handotaihenofujunbutsukakusanho
JPS5624938A (en) High pressure oxidizing apparatus
JPS5795624A (en) Heating device
JPS5678120A (en) Manufacture of compound semiconductor device
JPH04284624A (ja) 半導体基体への不純物の拡散方法
JPS5745227A (en) Manufacture of semiconductor device
JPS5750425A (en) Diffusing method for impurity of semiconductor