JPS5654080A - Avalanche photodiode - Google Patents
Avalanche photodiodeInfo
- Publication number
- JPS5654080A JPS5654080A JP12889379A JP12889379A JPS5654080A JP S5654080 A JPS5654080 A JP S5654080A JP 12889379 A JP12889379 A JP 12889379A JP 12889379 A JP12889379 A JP 12889379A JP S5654080 A JPS5654080 A JP S5654080A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- junction
- type
- layers
- band width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12889379A JPS5654080A (en) | 1979-10-08 | 1979-10-08 | Avalanche photodiode |
US06/187,744 US4383266A (en) | 1979-09-26 | 1980-09-16 | Avalanche photo diode |
GB8031240A GB2060257B (en) | 1979-09-26 | 1980-09-26 | Guard rings for avalanche photo diodes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12889379A JPS5654080A (en) | 1979-10-08 | 1979-10-08 | Avalanche photodiode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5654080A true JPS5654080A (en) | 1981-05-13 |
JPS6138872B2 JPS6138872B2 (ja) | 1986-09-01 |
Family
ID=14995944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12889379A Granted JPS5654080A (en) | 1979-09-26 | 1979-10-08 | Avalanche photodiode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5654080A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56158488A (en) * | 1980-05-12 | 1981-12-07 | Mitsubishi Electric Corp | Semiconductor device |
US4481523A (en) * | 1980-12-02 | 1984-11-06 | Fujitsu Limited | Avalanche photodiodes |
US4876209A (en) * | 1988-01-06 | 1989-10-24 | U.S.C. | Method of making avalanche photodiode |
EP2378567A4 (en) * | 2008-12-17 | 2015-08-12 | Ntt Electronics Corp | PHOTODIODE IN AVALANCHE |
-
1979
- 1979-10-08 JP JP12889379A patent/JPS5654080A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56158488A (en) * | 1980-05-12 | 1981-12-07 | Mitsubishi Electric Corp | Semiconductor device |
US4481523A (en) * | 1980-12-02 | 1984-11-06 | Fujitsu Limited | Avalanche photodiodes |
US4876209A (en) * | 1988-01-06 | 1989-10-24 | U.S.C. | Method of making avalanche photodiode |
EP2378567A4 (en) * | 2008-12-17 | 2015-08-12 | Ntt Electronics Corp | PHOTODIODE IN AVALANCHE |
Also Published As
Publication number | Publication date |
---|---|
JPS6138872B2 (ja) | 1986-09-01 |
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