JPS5651580A - Plasma etching method - Google Patents
Plasma etching methodInfo
- Publication number
- JPS5651580A JPS5651580A JP12531879A JP12531879A JPS5651580A JP S5651580 A JPS5651580 A JP S5651580A JP 12531879 A JP12531879 A JP 12531879A JP 12531879 A JP12531879 A JP 12531879A JP S5651580 A JPS5651580 A JP S5651580A
- Authority
- JP
- Japan
- Prior art keywords
- contg
- gas
- subjecting
- plasma etching
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12531879A JPS5651580A (en) | 1979-10-01 | 1979-10-01 | Plasma etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12531879A JPS5651580A (en) | 1979-10-01 | 1979-10-01 | Plasma etching method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5651580A true JPS5651580A (en) | 1981-05-09 |
JPS628512B2 JPS628512B2 (zh) | 1987-02-23 |
Family
ID=14907132
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12531879A Granted JPS5651580A (en) | 1979-10-01 | 1979-10-01 | Plasma etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5651580A (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59110119A (ja) * | 1982-12-15 | 1984-06-26 | Nec Corp | 半導体層の表面処理方法 |
JPS59201426A (ja) * | 1983-04-29 | 1984-11-15 | Sony Corp | 半導体基体の処理方法 |
JPS61147530A (ja) * | 1984-12-21 | 1986-07-05 | Toshiba Corp | 配線形成方法 |
JPS6466544A (en) * | 1987-09-08 | 1989-03-13 | Fuji Photo Film Co Ltd | Chemical analyzer |
JPH01206620A (ja) * | 1988-02-15 | 1989-08-18 | Toshiba Corp | 半導体装置の製造方法 |
WO2017110335A1 (ja) * | 2015-12-25 | 2017-06-29 | 東京エレクトロン株式会社 | 基板処理方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63243615A (ja) * | 1987-03-31 | 1988-10-11 | Matsushita Electric Ind Co Ltd | 液体燃料燃焼装置 |
-
1979
- 1979-10-01 JP JP12531879A patent/JPS5651580A/ja active Granted
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59110119A (ja) * | 1982-12-15 | 1984-06-26 | Nec Corp | 半導体層の表面処理方法 |
JPS59201426A (ja) * | 1983-04-29 | 1984-11-15 | Sony Corp | 半導体基体の処理方法 |
JPS61147530A (ja) * | 1984-12-21 | 1986-07-05 | Toshiba Corp | 配線形成方法 |
JPS6466544A (en) * | 1987-09-08 | 1989-03-13 | Fuji Photo Film Co Ltd | Chemical analyzer |
JPH01206620A (ja) * | 1988-02-15 | 1989-08-18 | Toshiba Corp | 半導体装置の製造方法 |
WO2017110335A1 (ja) * | 2015-12-25 | 2017-06-29 | 東京エレクトロン株式会社 | 基板処理方法 |
KR20180084094A (ko) * | 2015-12-25 | 2018-07-24 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법 |
CN108475632A (zh) * | 2015-12-25 | 2018-08-31 | 东京毅力科创株式会社 | 基板处理方法 |
TWI695428B (zh) * | 2015-12-25 | 2020-06-01 | 日商東京威力科創股份有限公司 | 基板處理方法 |
US10910229B2 (en) | 2015-12-25 | 2021-02-02 | Tokyo Electron Limited | Substrate treatment method |
CN108475632B (zh) * | 2015-12-25 | 2023-04-04 | 东京毅力科创株式会社 | 基板处理方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS628512B2 (zh) | 1987-02-23 |
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