JPS5650564A - Insulated gate type static induction thyristor - Google Patents

Insulated gate type static induction thyristor

Info

Publication number
JPS5650564A
JPS5650564A JP12715079A JP12715079A JPS5650564A JP S5650564 A JPS5650564 A JP S5650564A JP 12715079 A JP12715079 A JP 12715079A JP 12715079 A JP12715079 A JP 12715079A JP S5650564 A JPS5650564 A JP S5650564A
Authority
JP
Japan
Prior art keywords
region
voltage
satisfy
type
impurity density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12715079A
Other languages
English (en)
Other versions
JPS6148790B2 (ja
Inventor
Junichi Nishizawa
Tadahiro Omi
Naoshige Tamamushi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP12715079A priority Critical patent/JPS5650564A/ja
Publication of JPS5650564A publication Critical patent/JPS5650564A/ja
Publication of JPS6148790B2 publication Critical patent/JPS6148790B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
JP12715079A 1979-10-01 1979-10-01 Insulated gate type static induction thyristor Granted JPS5650564A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12715079A JPS5650564A (en) 1979-10-01 1979-10-01 Insulated gate type static induction thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12715079A JPS5650564A (en) 1979-10-01 1979-10-01 Insulated gate type static induction thyristor

Publications (2)

Publication Number Publication Date
JPS5650564A true JPS5650564A (en) 1981-05-07
JPS6148790B2 JPS6148790B2 (ja) 1986-10-25

Family

ID=14952851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12715079A Granted JPS5650564A (en) 1979-10-01 1979-10-01 Insulated gate type static induction thyristor

Country Status (1)

Country Link
JP (1) JPS5650564A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6144463A (ja) * 1984-08-08 1986-03-04 Toyo Electric Mfg Co Ltd サイリスタのエミツタ短絡構造
JPH0374877A (ja) * 1989-08-15 1991-03-29 Matsushita Electric Works Ltd 半導体装置
DE4042163A1 (de) * 1989-12-28 1991-09-12 Nissan Motor Verfahren zur herstellung einer halbleitervorrichtung
CN107579114A (zh) * 2017-08-17 2018-01-12 电子科技大学 一种具有复合栅介质的栅控晶闸管

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0511916Y2 (ja) * 1986-08-29 1993-03-25

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6144463A (ja) * 1984-08-08 1986-03-04 Toyo Electric Mfg Co Ltd サイリスタのエミツタ短絡構造
JPH0374877A (ja) * 1989-08-15 1991-03-29 Matsushita Electric Works Ltd 半導体装置
DE4042163A1 (de) * 1989-12-28 1991-09-12 Nissan Motor Verfahren zur herstellung einer halbleitervorrichtung
CN107579114A (zh) * 2017-08-17 2018-01-12 电子科技大学 一种具有复合栅介质的栅控晶闸管
CN107579114B (zh) * 2017-08-17 2020-05-26 电子科技大学 一种具有复合栅介质的栅控晶闸管

Also Published As

Publication number Publication date
JPS6148790B2 (ja) 1986-10-25

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