JPS5648175A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5648175A
JPS5648175A JP12397279A JP12397279A JPS5648175A JP S5648175 A JPS5648175 A JP S5648175A JP 12397279 A JP12397279 A JP 12397279A JP 12397279 A JP12397279 A JP 12397279A JP S5648175 A JPS5648175 A JP S5648175A
Authority
JP
Japan
Prior art keywords
electret plate
sos
mosfet
film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12397279A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6159670B2 (https=
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP12397279A priority Critical patent/JPS5648175A/ja
Publication of JPS5648175A publication Critical patent/JPS5648175A/ja
Publication of JPS6159670B2 publication Critical patent/JPS6159670B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H10D30/6759—Silicon-on-sapphire [SOS] substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
JP12397279A 1979-09-28 1979-09-28 Semiconductor device Granted JPS5648175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12397279A JPS5648175A (en) 1979-09-28 1979-09-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12397279A JPS5648175A (en) 1979-09-28 1979-09-28 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5648175A true JPS5648175A (en) 1981-05-01
JPS6159670B2 JPS6159670B2 (https=) 1986-12-17

Family

ID=14873861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12397279A Granted JPS5648175A (en) 1979-09-28 1979-09-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5648175A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61253055A (ja) * 1985-04-30 1986-11-10 ハダコ・リミテッド 側頭下顎関節用プロテ−ゼ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61253055A (ja) * 1985-04-30 1986-11-10 ハダコ・リミテッド 側頭下顎関節用プロテ−ゼ

Also Published As

Publication number Publication date
JPS6159670B2 (https=) 1986-12-17

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