JPS5648175A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5648175A
JPS5648175A JP12397279A JP12397279A JPS5648175A JP S5648175 A JPS5648175 A JP S5648175A JP 12397279 A JP12397279 A JP 12397279A JP 12397279 A JP12397279 A JP 12397279A JP S5648175 A JPS5648175 A JP S5648175A
Authority
JP
Japan
Prior art keywords
electret plate
sos
mosfet
film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12397279A
Other languages
Japanese (ja)
Other versions
JPS6159670B2 (en
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP12397279A priority Critical patent/JPS5648175A/en
Publication of JPS5648175A publication Critical patent/JPS5648175A/en
Publication of JPS6159670B2 publication Critical patent/JPS6159670B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
    • H01L29/78657—SOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)

Abstract

PURPOSE:To make possible to control the characteristics of an SOS.MOSFET more widely and at high accuracy by forming a semiconductor element on one principal plane of a dielectric substrate and providing an electret plate on the other principal plane side contacting it or separated from it. CONSTITUTION:On a dielectric substrate 1 of sapphire, etc., a p type Si layer 2 is epitaxially grown, and on its central area, a gate metal film 4 is coated via a gate SiO2 film 3. Next, using the film 4 as a mask and diffusing N type impurities into the layer 2 on its both sides, n<+> type source region 5 and drain region 6 are formed, and thus an SOS.MOSFET is formed. Then a thin electret plate 7 consisting of carnauba wax, magnetized zinc, borosilicate glass, etc., is coated on the back face of the substrate 1. By so doing, the threshold voltage of the FET can be controlled by the surface potential and polarity of the thin electret plate 7.
JP12397279A 1979-09-28 1979-09-28 Semiconductor device Granted JPS5648175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12397279A JPS5648175A (en) 1979-09-28 1979-09-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12397279A JPS5648175A (en) 1979-09-28 1979-09-28 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5648175A true JPS5648175A (en) 1981-05-01
JPS6159670B2 JPS6159670B2 (en) 1986-12-17

Family

ID=14873861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12397279A Granted JPS5648175A (en) 1979-09-28 1979-09-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5648175A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61253055A (en) * 1985-04-30 1986-11-10 ハダコ・リミテッド Prosthesis for lower jaw joint

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61253055A (en) * 1985-04-30 1986-11-10 ハダコ・リミテッド Prosthesis for lower jaw joint
JPH0371899B2 (en) * 1985-04-30 1991-11-14 Vitek Inc

Also Published As

Publication number Publication date
JPS6159670B2 (en) 1986-12-17

Similar Documents

Publication Publication Date Title
JPS5658267A (en) Insulated gate type field-effect transistor
JPS56125868A (en) Thin-film semiconductor device
JPS5688354A (en) Semiconductor integrated circuit device
JPS5648175A (en) Semiconductor device
JPS5696865A (en) Manufacture of semiconductor device
JPS577972A (en) Insulated gate type thin film transistor
JPS55154767A (en) Manufacture of semiconductor device
JPS57191539A (en) Semiconductor ion sensor
JPS5660061A (en) Semiconductor device
JPS55162270A (en) Semiconductor device
JPS57164573A (en) Semiconductor device
JPS5561070A (en) Semiconductor device
JPS56100473A (en) Semiconductor device
JPS6484672A (en) Photoelectric conversion device
JPS5713765A (en) Insulated gate type field effect transistor and manufacture thereof
JPS55117280A (en) Semiconductor device
JPS5670669A (en) Longitudinal semiconductor device
JPS52117079A (en) Preparation of semiconductor device
JPS53145485A (en) Production of semiconductor device having serrations on semiconductor surface
JPS5721866A (en) Manufacture of insulated gate type field effect transistor
JPS5715471A (en) Junction type field effect semiconductor device and manufacture thereof
JPS56100474A (en) Semiconductor device
JPS5779670A (en) Manufacture of semiconductor device
JPS5582460A (en) Negative resistance semiconductor element
JPS54156482A (en) Manufacture for field effect type semiconductor device