JPS5647992A - Nonvolatile semiconductor memory - Google Patents

Nonvolatile semiconductor memory

Info

Publication number
JPS5647992A
JPS5647992A JP12435179A JP12435179A JPS5647992A JP S5647992 A JPS5647992 A JP S5647992A JP 12435179 A JP12435179 A JP 12435179A JP 12435179 A JP12435179 A JP 12435179A JP S5647992 A JPS5647992 A JP S5647992A
Authority
JP
Japan
Prior art keywords
erasure
memory cell
transistor
voltage
column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12435179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6120958B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Iwahashi
Kouji Ariizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12435179A priority Critical patent/JPS5647992A/ja
Publication of JPS5647992A publication Critical patent/JPS5647992A/ja
Publication of JPS6120958B2 publication Critical patent/JPS6120958B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP12435179A 1979-09-27 1979-09-27 Nonvolatile semiconductor memory Granted JPS5647992A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12435179A JPS5647992A (en) 1979-09-27 1979-09-27 Nonvolatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12435179A JPS5647992A (en) 1979-09-27 1979-09-27 Nonvolatile semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5647992A true JPS5647992A (en) 1981-04-30
JPS6120958B2 JPS6120958B2 (enrdf_load_stackoverflow) 1986-05-24

Family

ID=14883222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12435179A Granted JPS5647992A (en) 1979-09-27 1979-09-27 Nonvolatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5647992A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5827372A (ja) * 1981-08-12 1983-02-18 Hitachi Ltd 不揮発性メモリ装置
JPS58501563A (ja) * 1981-09-28 1983-09-16 モトロ−ラ・インコ−ポレ−テツド 列および行消去可能ｅｅｐｒｏｍ
US4797856A (en) * 1987-04-16 1989-01-10 Intel Corporation Self-limiting erase scheme for EEPROM
JPH02108293A (ja) * 1988-10-15 1990-04-20 Sony Corp 不揮発性メモリのアドレスデコーダ回路
JPH02127590A (ja) * 1988-10-31 1990-05-16 Albany Internatl Corp 製紙機械用織物を変性する方法
JPH02127585A (ja) * 1988-10-31 1990-05-16 Albany Internatl Corp 抄紙機におけるプレス織布の変成方法
JPH02127591A (ja) * 1988-10-31 1990-05-16 Albany Internatl Corp 製紙機械用織物の改質方法
JPH03501374A (ja) * 1987-10-07 1991-03-28 タンフェルト　インコーポレイテッド 製紙用圧縮フェルト
JPH0561720B2 (enrdf_load_stackoverflow) * 1981-09-28 1993-09-06 Motorola Inc

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5827372A (ja) * 1981-08-12 1983-02-18 Hitachi Ltd 不揮発性メモリ装置
JPS58501563A (ja) * 1981-09-28 1983-09-16 モトロ−ラ・インコ−ポレ−テツド 列および行消去可能ｅｅｐｒｏｍ
JPH0561720B2 (enrdf_load_stackoverflow) * 1981-09-28 1993-09-06 Motorola Inc
US4797856A (en) * 1987-04-16 1989-01-10 Intel Corporation Self-limiting erase scheme for EEPROM
JPH03501374A (ja) * 1987-10-07 1991-03-28 タンフェルト　インコーポレイテッド 製紙用圧縮フェルト
JPH02108293A (ja) * 1988-10-15 1990-04-20 Sony Corp 不揮発性メモリのアドレスデコーダ回路
JPH02127590A (ja) * 1988-10-31 1990-05-16 Albany Internatl Corp 製紙機械用織物を変性する方法
JPH02127585A (ja) * 1988-10-31 1990-05-16 Albany Internatl Corp 抄紙機におけるプレス織布の変成方法
JPH02127591A (ja) * 1988-10-31 1990-05-16 Albany Internatl Corp 製紙機械用織物の改質方法

Also Published As

Publication number Publication date
JPS6120958B2 (enrdf_load_stackoverflow) 1986-05-24

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