JPS5643793A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS5643793A JPS5643793A JP12029879A JP12029879A JPS5643793A JP S5643793 A JPS5643793 A JP S5643793A JP 12029879 A JP12029879 A JP 12029879A JP 12029879 A JP12029879 A JP 12029879A JP S5643793 A JPS5643793 A JP S5643793A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- thick
- light
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12029879A JPS5643793A (en) | 1979-09-18 | 1979-09-18 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12029879A JPS5643793A (en) | 1979-09-18 | 1979-09-18 | Semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5643793A true JPS5643793A (en) | 1981-04-22 |
| JPS625355B2 JPS625355B2 (enrdf_load_stackoverflow) | 1987-02-04 |
Family
ID=14782764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12029879A Granted JPS5643793A (en) | 1979-09-18 | 1979-09-18 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5643793A (enrdf_load_stackoverflow) |
-
1979
- 1979-09-18 JP JP12029879A patent/JPS5643793A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS625355B2 (enrdf_load_stackoverflow) | 1987-02-04 |
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