JPS625355B2 - - Google Patents
Info
- Publication number
- JPS625355B2 JPS625355B2 JP12029879A JP12029879A JPS625355B2 JP S625355 B2 JPS625355 B2 JP S625355B2 JP 12029879 A JP12029879 A JP 12029879A JP 12029879 A JP12029879 A JP 12029879A JP S625355 B2 JPS625355 B2 JP S625355B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light
- active layer
- light guide
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 28
- 230000003287 optical effect Effects 0.000 claims description 14
- 230000010355 oscillation Effects 0.000 description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000000969 carrier Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12029879A JPS5643793A (en) | 1979-09-18 | 1979-09-18 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12029879A JPS5643793A (en) | 1979-09-18 | 1979-09-18 | Semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5643793A JPS5643793A (en) | 1981-04-22 |
| JPS625355B2 true JPS625355B2 (enrdf_load_stackoverflow) | 1987-02-04 |
Family
ID=14782764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12029879A Granted JPS5643793A (en) | 1979-09-18 | 1979-09-18 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5643793A (enrdf_load_stackoverflow) |
-
1979
- 1979-09-18 JP JP12029879A patent/JPS5643793A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5643793A (en) | 1981-04-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2008135786A (ja) | 高出力半導体レーザダイオード | |
| US5912475A (en) | Optical semiconductor device with InP | |
| JPS6343908B2 (enrdf_load_stackoverflow) | ||
| JPH0194689A (ja) | 光半導体素子 | |
| US4759025A (en) | Window structure semiconductor laser | |
| JPH0518473B2 (enrdf_load_stackoverflow) | ||
| JPS621277B2 (enrdf_load_stackoverflow) | ||
| JPH10242577A (ja) | 半導体レーザおよびその製造方法 | |
| JPH0426558B2 (enrdf_load_stackoverflow) | ||
| JPS625355B2 (enrdf_load_stackoverflow) | ||
| JPH0474876B2 (enrdf_load_stackoverflow) | ||
| JPH0671121B2 (ja) | 半導体レーザ装置 | |
| US4745611A (en) | Buried twin ridge substrate laser | |
| JPS5832794B2 (ja) | 半導体レ−ザ | |
| JPS6154279B2 (enrdf_load_stackoverflow) | ||
| JPH06112588A (ja) | 光半導体素子 | |
| JP2703619B2 (ja) | 波長可変半導体レーザ | |
| JPS6018988A (ja) | 半導体レ−ザ | |
| JPS6136720B2 (enrdf_load_stackoverflow) | ||
| JPS6237833B2 (enrdf_load_stackoverflow) | ||
| JPS6342871B2 (enrdf_load_stackoverflow) | ||
| JPS601881A (ja) | 半導体レ−ザ素子 | |
| JP2740165B2 (ja) | 半導体レーザ | |
| JPS6054796B2 (ja) | 半導体レ−ザ | |
| JPS59184585A (ja) | 単一軸モ−ド半導体レ−ザ |