JPS6136720B2 - - Google Patents
Info
- Publication number
- JPS6136720B2 JPS6136720B2 JP3374379A JP3374379A JPS6136720B2 JP S6136720 B2 JPS6136720 B2 JP S6136720B2 JP 3374379 A JP3374379 A JP 3374379A JP 3374379 A JP3374379 A JP 3374379A JP S6136720 B2 JPS6136720 B2 JP S6136720B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active layer
- type
- refractive index
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 25
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000010355 oscillation Effects 0.000 description 24
- 230000003287 optical effect Effects 0.000 description 13
- 230000000694 effects Effects 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3374379A JPS55125692A (en) | 1979-03-22 | 1979-03-22 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3374379A JPS55125692A (en) | 1979-03-22 | 1979-03-22 | Semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55125692A JPS55125692A (en) | 1980-09-27 |
| JPS6136720B2 true JPS6136720B2 (enrdf_load_stackoverflow) | 1986-08-20 |
Family
ID=12394886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3374379A Granted JPS55125692A (en) | 1979-03-22 | 1979-03-22 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55125692A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58132986A (ja) * | 1982-02-03 | 1983-08-08 | Hitachi Ltd | 半導体レ−ザ装置 |
| JPS5967677A (ja) * | 1982-07-01 | 1984-04-17 | Semiconductor Res Found | 光集積回路 |
-
1979
- 1979-03-22 JP JP3374379A patent/JPS55125692A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55125692A (en) | 1980-09-27 |
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