JPS5633836A - Patterning method of gaas thermal oxide film - Google Patents
Patterning method of gaas thermal oxide filmInfo
- Publication number
- JPS5633836A JPS5633836A JP10988479A JP10988479A JPS5633836A JP S5633836 A JPS5633836 A JP S5633836A JP 10988479 A JP10988479 A JP 10988479A JP 10988479 A JP10988479 A JP 10988479A JP S5633836 A JPS5633836 A JP S5633836A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- thermal oxide
- etching
- gaas
- patterning method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title abstract 4
- 238000000059 patterning Methods 0.000 title abstract 3
- 238000005530 etching Methods 0.000 abstract 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 238000004299 exfoliation Methods 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 238000004506 ultrasonic cleaning Methods 0.000 abstract 2
- 238000005406 washing Methods 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 abstract 1
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10988479A JPS5633836A (en) | 1979-08-29 | 1979-08-29 | Patterning method of gaas thermal oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10988479A JPS5633836A (en) | 1979-08-29 | 1979-08-29 | Patterning method of gaas thermal oxide film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5633836A true JPS5633836A (en) | 1981-04-04 |
Family
ID=14521596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10988479A Pending JPS5633836A (en) | 1979-08-29 | 1979-08-29 | Patterning method of gaas thermal oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5633836A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62172720A (ja) * | 1986-01-24 | 1987-07-29 | Rohm Co Ltd | 半導体装置の製造方法 |
| JPS63142638A (ja) * | 1986-12-05 | 1988-06-15 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
-
1979
- 1979-08-29 JP JP10988479A patent/JPS5633836A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62172720A (ja) * | 1986-01-24 | 1987-07-29 | Rohm Co Ltd | 半導体装置の製造方法 |
| JPS63142638A (ja) * | 1986-12-05 | 1988-06-15 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
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