JPS5646535A - Cleaning of substrate - Google Patents

Cleaning of substrate

Info

Publication number
JPS5646535A
JPS5646535A JP12085179A JP12085179A JPS5646535A JP S5646535 A JPS5646535 A JP S5646535A JP 12085179 A JP12085179 A JP 12085179A JP 12085179 A JP12085179 A JP 12085179A JP S5646535 A JPS5646535 A JP S5646535A
Authority
JP
Japan
Prior art keywords
substrate
resist
approx
h2so4
dipped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12085179A
Other languages
Japanese (ja)
Other versions
JPS5833696B2 (en
Inventor
Kohei Sogo
Kengo Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP54120851A priority Critical patent/JPS5833696B2/en
Publication of JPS5646535A publication Critical patent/JPS5646535A/en
Publication of JPS5833696B2 publication Critical patent/JPS5833696B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To efficiently remove an unnecessary resist retained on a semiconductor or a mask substrate by alternately dipping the substrate in an H2O2 water and H2SO4. CONSTITUTION:A Cr mask substrate in which an electron beam resist is retained is dipped in an H2O2 at room temperature for approx. 30sec, and is then dipped in a sulfuric acid at approx. 90 deg.C for approx. 3min. Further, the same H2O2 treatment and sulfuric acid treatment are alternately repeated approx. 8 times. The substrate is eventually rinsed with water. Since the substrate is coated with the H2O2 at the odd steps, O2 necessary for removing the resist is generated on the surface from the surface of the resist to be removed in the even steps. Accordingly, the resist can be removed in the similar efficiency to the mixture solution of the H2SO4 and H2O2. Since the containers are different, decomposition of unnecessary H2O2 can be prevented, and the using period can be prolonged.
JP54120851A 1979-09-21 1979-09-21 How to remove resist Expired JPS5833696B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54120851A JPS5833696B2 (en) 1979-09-21 1979-09-21 How to remove resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54120851A JPS5833696B2 (en) 1979-09-21 1979-09-21 How to remove resist

Publications (2)

Publication Number Publication Date
JPS5646535A true JPS5646535A (en) 1981-04-27
JPS5833696B2 JPS5833696B2 (en) 1983-07-21

Family

ID=14796510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54120851A Expired JPS5833696B2 (en) 1979-09-21 1979-09-21 How to remove resist

Country Status (1)

Country Link
JP (1) JPS5833696B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998042013A1 (en) * 1997-03-17 1998-09-24 Fsi International Inc. A process for photoresist removal
US6032682A (en) * 1996-06-25 2000-03-07 Cfmt, Inc Method for sulfuric acid resist stripping
US6261845B1 (en) 1999-02-25 2001-07-17 Cfmt, Inc. Methods and systems for determining chemical concentrations and controlling the processing of semiconductor substrates
CN111312582A (en) * 2020-03-23 2020-06-19 上海华力集成电路制造有限公司 Cleaning method for reducing pattern defects on surface of silicon wafer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6032682A (en) * 1996-06-25 2000-03-07 Cfmt, Inc Method for sulfuric acid resist stripping
WO1998042013A1 (en) * 1997-03-17 1998-09-24 Fsi International Inc. A process for photoresist removal
US6261845B1 (en) 1999-02-25 2001-07-17 Cfmt, Inc. Methods and systems for determining chemical concentrations and controlling the processing of semiconductor substrates
CN111312582A (en) * 2020-03-23 2020-06-19 上海华力集成电路制造有限公司 Cleaning method for reducing pattern defects on surface of silicon wafer

Also Published As

Publication number Publication date
JPS5833696B2 (en) 1983-07-21

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