KR930002678B1 - Photoresist stripping method - Google Patents

Photoresist stripping method Download PDF

Info

Publication number
KR930002678B1
KR930002678B1 KR1019900008525A KR900008525A KR930002678B1 KR 930002678 B1 KR930002678 B1 KR 930002678B1 KR 1019900008525 A KR1019900008525 A KR 1019900008525A KR 900008525 A KR900008525 A KR 900008525A KR 930002678 B1 KR930002678 B1 KR 930002678B1
Authority
KR
South Korea
Prior art keywords
sulfuric acid
photoresist
container
ozone
wet station
Prior art date
Application number
KR1019900008525A
Other languages
Korean (ko)
Other versions
KR920001650A (en
Inventor
한국룡
Original Assignee
금성일렉트론주식회사
문정환
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론주식회사, 문정환 filed Critical 금성일렉트론주식회사
Priority to KR1019900008525A priority Critical patent/KR930002678B1/en
Publication of KR920001650A publication Critical patent/KR920001650A/en
Application granted granted Critical
Publication of KR930002678B1 publication Critical patent/KR930002678B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The removal of photoresist from the semiconductor manufacturing process is conducted by (a) feeding ozone (O3) generated from the ozone generator (5) into a sulfuric acid container (2) located in the wet station (1), (b) removing photoresist with H2SO4 + O3, and (c) removing sulfuric acid solution in the deionizing container (3) and washing. In the above process the concentration of ozone is 10-100 g/Nm3, and the temperature of sulfuric acid is adjusted at 60-150 deg.C by a heater (4).

Description

포토레지스트 제거방법How to remove photoresist

제 1 도는 종래 웨트 스테이션의 구성도.1 is a block diagram of a conventional wet station.

제 2 도는 본 발명의 웨트 스테이션의 구성도.2 is a block diagram of the wet station of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 웨트 스테이션 2 : 화학용기1: wet station 2: chemical container

3 : 탈이온용기 4 : 히터3: deionized container 4: heater

5 : O3발생기5: O 3 generator

본 발명은 반도체 제조공정 중의 포토레지스트(이하 P/R이라 한다)제거방법에 관한 것으로, 특히 이온주입 혹은 에치후의 P/R을 제거하기에 적당하도록 한 것이다.The present invention relates to a method of removing a photoresist (hereinafter referred to as P / R) during a semiconductor manufacturing process, and is particularly suitable for removing P / R after ion implantation or etching.

종래에는 제 1 도에 도시된 바와같이 일반적인 웨트 스테이션(Wet station)(1)내의 화학용기(2)에서 H2SO4+H2O2를 사용하여 P/R을 제거한 후 탈이온용기(3)에서 상기의 H2SO4+H2O2를 제거 및 세척하였으며, 이때의 H2SO4와 H2O2의 비율은 약 4 : 1 이고, H2SO4+H2O2의 온도는 히터(4)를 사용하여 60℃-150℃로 조정하였다.Conventionally, as shown in FIG. 1, after removing P / R using H 2 SO 4 + H 2 O 2 in a chemical vessel 2 in a general wet station 1, a deionization vessel 3 ) H 2 SO 4 + H 2 O 2 was removed and washed, wherein the ratio of H 2 SO 4 and H 2 O 2 is about 4: 1, the temperature of H 2 SO 4 + H 2 O 2 Was adjusted to 60 ° C.-150 ° C. using the heater 4.

그러나 상기와 같은 종래기술에 있어서는 P/R제거시 H2O2(주로 H2O성분)가 휘발하면서 H2O가 ↑되고 남은 산소가 H2SO4와 결합하여 H2O는 또 다시 ↑되므로 결국 SO4만 남게 되며 이 SO4는 P/R의 주성분인 탄소(C)와 결합하여 C(SO4)2의 형태로 되므로 P/R을 제거시키게 되는데 이때, H2O2는 휘발성이 강해서 빨리 증발하여 O의 양이 급속히 감소하여 H2SO4를 분리시키므로 SO4가 C(SO4)2로 결합되는 것을 감소시키게 되고, 이에 따라 P/R제거능력이 떨어지기 때문에 H2SO4+H2O2의 화학적 교환주기를 12-24시간으로 짧게 하는 원인이 된다.However, as in the prior art, such as the P / R to remove when H 2 O 2 (mainly H 2 O component) volatilizes H 2 O is ↑, and the remaining oxygen in combination with H 2 SO 4 H 2 O is again ↑ As a result, only SO 4 remains, and SO 4 combines with carbon (C), which is the main component of P / R, to form C (SO 4 ) 2 , thereby removing P / R, where H 2 O 2 is volatile. since strong quickly evaporated by the content of O is rapidly reduced to remove the H 2 SO 4 because SO 4 is thereby reduced to be coupled with C (SO 4) 2, whereby the P / R removing capability decreases as H 2 SO 4 This causes the chemical exchange cycle of + H 2 O 2 to be shortened to 12-24 hours.

따라서, 이러한 화학용액의 소모량이 많아지며 빈번한 화학용액의 교환으로 휴지(Down-time)시간이 길어져 생산성이 저하되는 결점이 있었다.Therefore, there is a drawback that the consumption of such chemical solution increases and productivity decreases due to long down time due to frequent exchange of chemical solutions.

본 발명은 이와같은 종래의 결점을 감안하여 교환주기를 길게 할 수 있는 화학용액을 사용하므로 화학용액의 소모량을 줄이고 휴지시간을 짧게 할 수 있도록 함을 그 목적으로 한다.In view of the above-mentioned drawbacks, the present invention uses a chemical solution capable of lengthening an exchange cycle, so that the consumption of the chemical solution can be reduced and the downtime can be shortened.

이와같은 목적을 달성하기 위하여 본 발명은 제 2 도에 도시된 바와같이 일반적인 웨트 스테이션(1)내의 H2SO4화학용기(2)에 O3발생기(5)로부터 O3를 주입하여 O를 계속적으로 공급하므로 휘발성이 강한 H2O2에서 O가 급속히 감소함으로 인하여 P/R제거능력이 떨어지는 것을 방지할 수 있어 P/R제거능력이 장시간 유지된다.The present invention to achieve this purpose is continuously a O by injecting O 3 from the O 3 generator (5) in H 2 SO 4 chemical container (2) in a common wet station 1 as shown in FIG. 2 As it is supplied with, it can prevent P / R removal ability from falling off due to the rapid decrease of O in highly volatile H 2 O 2 , so P / R removal ability is maintained for a long time.

또한, 이와같이 P/R을 제거한 후 제거한 후 탈이온용기(3)에서 H2SO4용액을 제거 및 세척하여 이때의 O3농도는 10-100g/N㎥, H2SO4의 온도는 히터(4)를 사용하여 60-150℃로 조정한다.In addition, after removing the P / R and then remove the H 2 SO 4 solution in the deionization vessel (3) and wash the O 3 concentration at this time is 10-100g / N㎥, the temperature of H 2 SO 4 is a heater ( Adjust to 60-150 ° C using 4).

이러한 본 발명에 의하여 H2SO4에 O3가 첨가되어 O의 양이 감소되지 않아 P/R제거능력이 장시간 유지되므로 이 H2SO4O3의 교환주기가 3-5일로 길어져 화학용액의 소모량이 작아 원가절감을 얻을 수 있으며 교환주기가 길어짐에 다른 휴지기간이 짧아져 생산성의 향상을 가져올 수 있는 장점을 갖는다.By the present invention, since O 3 is added to H 2 SO 4 and the amount of O is not reduced, P / R removal capacity is maintained for a long time, so the exchange cycle of H 2 SO 4 O 3 is extended to 3-5 days, thereby improving the chemical solution. Cost reduction can be achieved because the consumption is small, and the exchange period is long, and the rest period is shortened, which has the advantage of improving productivity.

Claims (2)

웨트 스테이션(1) 내의 H2SO4화학용기(2)에 O3발생기(5)로부터 O3를 주입하여 H2SO4+O3으로 P/R을 제거한 후 탈이온용기(3)에서 H2SO4용액을 제거 및 세척함을 특징으로 하는 포토레지스트 제거방법.Injecting O 3 from the O 3 generator (5) into the H 2 SO 4 chemical vessel (2) in the wet station (1) to remove P / R with H 2 SO 4 + O 3 , and then remove the H from the deionization vessel (3). 2 SO 4 solution removal method characterized in that the removal and washing. 제 1 항에 있어서, O3의 농도는 10-100g/Nm3으로 함을 특징으로 하는 포토레지스트 제거방법.The method of claim 1, wherein the concentration of O 3 is 10-100 g / Nm 3 .
KR1019900008525A 1990-06-11 1990-06-11 Photoresist stripping method KR930002678B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900008525A KR930002678B1 (en) 1990-06-11 1990-06-11 Photoresist stripping method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900008525A KR930002678B1 (en) 1990-06-11 1990-06-11 Photoresist stripping method

Publications (2)

Publication Number Publication Date
KR920001650A KR920001650A (en) 1992-01-30
KR930002678B1 true KR930002678B1 (en) 1993-04-07

Family

ID=19299957

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900008525A KR930002678B1 (en) 1990-06-11 1990-06-11 Photoresist stripping method

Country Status (1)

Country Link
KR (1) KR930002678B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6790783B1 (en) * 1999-05-27 2004-09-14 Micron Technology, Inc. Semiconductor fabrication apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200106729A (en) 2019-03-05 2020-09-15 주식회사 케이오씨솔루션 Internal Mold Release Agent For Optical Lens and Epoxy Acryl Based Optical Lens comprising it
KR20200109779A (en) 2019-03-14 2020-09-23 주식회사 케이오씨솔루션 Composition for improving thermal stability and releasability of optical lenses and composition for Epoxy Acryl Based Optical Lens comprising same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6790783B1 (en) * 1999-05-27 2004-09-14 Micron Technology, Inc. Semiconductor fabrication apparatus

Also Published As

Publication number Publication date
KR920001650A (en) 1992-01-30

Similar Documents

Publication Publication Date Title
US6431183B1 (en) Method for treating semiconductor substrates
TWI525684B (en) Cleaning methods and cleaning systems for electronic materials
US5676760A (en) Method for wet processing of a semiconductor substrate
KR100316374B1 (en) Method and apparatus for cleaning photomask
JP3072876B2 (en) Etching solution purification method
US20040079386A1 (en) Method of and apparatus for washing photomask and washing solution for photomask
US20120012134A1 (en) Method for cleaning electronic material and device for cleaning electronic material
KR930002678B1 (en) Photoresist stripping method
CN109107974B (en) Cleaning method of quartz device for solar cell preparation
JPH054811A (en) Method for cleansing polycrystalline silicon
JPH04125927A (en) Method of washing substrate
JP3377294B2 (en) Substrate surface treatment method and apparatus
IT1074452B (en) Effective cleaning of silicon semiconductor chips - using hot mixt of conc sulphuric acid and hydrogen peroxide
CN102034680A (en) Drying method of wafer
JPH1129795A (en) Cleaning water for electronic material, its preparation, and cleaning of electronic material
CN110249411B (en) Ge. Method for washing SiGe or germanide
JPH0974080A (en) Ozone cleaning of semiconductor substrate
JPH04101418A (en) Method of increasing lifetime of si wafer
KR19980048608A (en) Wafer cleaning method
KR19990079059A (en) Wafer cleaning method
JP4147411B2 (en) Diluted wastewater treatment method
KR0171983B1 (en) Wafer cleaning method
JPH11330027A (en) Wet treatment method
WO2003045540A1 (en) Apparatus and method for processing electronic component recursors
CN104934315A (en) Crystalline silicon wet oxidation process

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
GRNT Written decision to grant
E701 Decision to grant or registration of patent right
FPAY Annual fee payment

Payment date: 20050322

Year of fee payment: 13

LAPS Lapse due to unpaid annual fee