JPS6465846A - Fine processing - Google Patents

Fine processing

Info

Publication number
JPS6465846A
JPS6465846A JP22341887A JP22341887A JPS6465846A JP S6465846 A JPS6465846 A JP S6465846A JP 22341887 A JP22341887 A JP 22341887A JP 22341887 A JP22341887 A JP 22341887A JP S6465846 A JPS6465846 A JP S6465846A
Authority
JP
Japan
Prior art keywords
etching liquid
film
nh4f
auzn
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22341887A
Other languages
Japanese (ja)
Inventor
Yoshinori Takeuchi
Takeshi Idota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP22341887A priority Critical patent/JPS6465846A/en
Publication of JPS6465846A publication Critical patent/JPS6465846A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To give a heat-resistance lift-off mask and to make possible a high- temperature deposition and a high-temperature heat treatment by a method wherein an SiO2 film and an SiNx film containing a small quantity of hydrogen are laminated on a substrate to form a fine pattern with a prescribed etching liquid. CONSTITUTION:An SiO2 film 12 and an SiNx film 13 containing a small quantity of hydrogen are deposited in order on a substrate 11 consisting of InP and so on. A fine pattern is formed on the films 12 and 13 using a mixed etching liquid of an HF etching liquid, an NH4F etching liquid and an H2O etching liquid. Then, after being deposited, AuZn is heat-treated (450 deg.C) and is dipped in a mixed etching liquid of an HF etching liquid, an NH4F etching liquid and an H2O etching liquid to lift off an AuZn film 14.
JP22341887A 1987-09-07 1987-09-07 Fine processing Pending JPS6465846A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22341887A JPS6465846A (en) 1987-09-07 1987-09-07 Fine processing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22341887A JPS6465846A (en) 1987-09-07 1987-09-07 Fine processing

Publications (1)

Publication Number Publication Date
JPS6465846A true JPS6465846A (en) 1989-03-13

Family

ID=16797832

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22341887A Pending JPS6465846A (en) 1987-09-07 1987-09-07 Fine processing

Country Status (1)

Country Link
JP (1) JPS6465846A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012195302A (en) * 2006-07-25 2012-10-11 Lg Chem Ltd Method of manufacturing organic light-emitting device and organic light-emitting device manufactured by using the method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012195302A (en) * 2006-07-25 2012-10-11 Lg Chem Ltd Method of manufacturing organic light-emitting device and organic light-emitting device manufactured by using the method

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