JPS5630757A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5630757A JPS5630757A JP10701679A JP10701679A JPS5630757A JP S5630757 A JPS5630757 A JP S5630757A JP 10701679 A JP10701679 A JP 10701679A JP 10701679 A JP10701679 A JP 10701679A JP S5630757 A JPS5630757 A JP S5630757A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- substrate
- base
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- 230000003321 amplification Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10701679A JPS5630757A (en) | 1979-08-22 | 1979-08-22 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10701679A JPS5630757A (en) | 1979-08-22 | 1979-08-22 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5630757A true JPS5630757A (en) | 1981-03-27 |
Family
ID=14448363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10701679A Pending JPS5630757A (en) | 1979-08-22 | 1979-08-22 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5630757A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5840857A (ja) * | 1981-08-10 | 1983-03-09 | シ−メンス・アクチエンゲゼルシヤフト | Mosfet |
-
1979
- 1979-08-22 JP JP10701679A patent/JPS5630757A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5840857A (ja) * | 1981-08-10 | 1983-03-09 | シ−メンス・アクチエンゲゼルシヤフト | Mosfet |
JPH0481343B2 (ja) * | 1981-08-10 | 1992-12-22 | Siemens Ag |
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