JPS5726465A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5726465A
JPS5726465A JP10155480A JP10155480A JPS5726465A JP S5726465 A JPS5726465 A JP S5726465A JP 10155480 A JP10155480 A JP 10155480A JP 10155480 A JP10155480 A JP 10155480A JP S5726465 A JPS5726465 A JP S5726465A
Authority
JP
Japan
Prior art keywords
type
emitter
region
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10155480A
Other languages
Japanese (ja)
Inventor
Takashi Yasujima
Yutaka Etsuno
Toshio Yonezawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10155480A priority Critical patent/JPS5726465A/en
Publication of JPS5726465A publication Critical patent/JPS5726465A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve the current amplification factor of a semiconductor device with low emitter current region by removing the part exposed on the surface of a substrate of emitter and base junction to form a groove and covering the surface of the substrate including the groove with clean oxidized film. CONSTITUTION:An n<+> type buried layer 102 is formed on a p type Si substrate 101, and an n type epitaxial layer 103, a p<+> type isolation region 104, a p<+> type base region 108, an n<+> type emitter region 113, etc. to become collector region are formed on the substrate 101. Then, the part exposed on the surface of the layer 103 of the emitter and base junction is selectively removed, and an annular groove 113 is formed. Then, a clean oxidized film 114 is formed on the surface of the layer 103 including the groove 113. Thus, the recombination center density in the emitter and base junction depletion layer caused by the crystalline defect or the like can be remarkably reduced. Consequently, it can prevent the increase in the base current at the operating time of the n-p-n transistor, and the current amplification factor hFE can be remarkably improved.
JP10155480A 1980-07-24 1980-07-24 Semiconductor device Pending JPS5726465A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10155480A JPS5726465A (en) 1980-07-24 1980-07-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10155480A JPS5726465A (en) 1980-07-24 1980-07-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5726465A true JPS5726465A (en) 1982-02-12

Family

ID=14303632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10155480A Pending JPS5726465A (en) 1980-07-24 1980-07-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5726465A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS432115Y1 (en) * 1964-07-17 1968-01-29
JPS5012991A (en) * 1973-06-05 1975-02-10
JPS5263682A (en) * 1975-11-20 1977-05-26 Matsushita Electronics Corp Production of mesa type transistor
JPS54162476A (en) * 1978-06-14 1979-12-24 Toshiba Corp Semiconductor device and its manufacture

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS432115Y1 (en) * 1964-07-17 1968-01-29
JPS5012991A (en) * 1973-06-05 1975-02-10
JPS5263682A (en) * 1975-11-20 1977-05-26 Matsushita Electronics Corp Production of mesa type transistor
JPS54162476A (en) * 1978-06-14 1979-12-24 Toshiba Corp Semiconductor device and its manufacture

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