JPS5627927A - Location in electron beam injection - Google Patents
Location in electron beam injectionInfo
- Publication number
- JPS5627927A JPS5627927A JP10275979A JP10275979A JPS5627927A JP S5627927 A JPS5627927 A JP S5627927A JP 10275979 A JP10275979 A JP 10275979A JP 10275979 A JP10275979 A JP 10275979A JP S5627927 A JPS5627927 A JP S5627927A
- Authority
- JP
- Japan
- Prior art keywords
- standard marks
- marks
- electron beam
- location
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010894 electron beam technology Methods 0.000 title abstract 4
- 238000002347 injection Methods 0.000 title 1
- 239000007924 injection Substances 0.000 title 1
- 230000015556 catabolic process Effects 0.000 abstract 3
- 238000006731 degradation reaction Methods 0.000 abstract 3
- 238000001514 detection method Methods 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10275979A JPS5627927A (en) | 1979-08-14 | 1979-08-14 | Location in electron beam injection |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10275979A JPS5627927A (en) | 1979-08-14 | 1979-08-14 | Location in electron beam injection |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5627927A true JPS5627927A (en) | 1981-03-18 |
JPS6244686B2 JPS6244686B2 (enrdf_load_stackoverflow) | 1987-09-22 |
Family
ID=14336118
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10275979A Granted JPS5627927A (en) | 1979-08-14 | 1979-08-14 | Location in electron beam injection |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5627927A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6074519A (ja) * | 1983-09-30 | 1985-04-26 | Fujitsu Ltd | 電子ビ−ム露光における試料の位置合せ方法 |
US5185679A (en) * | 1988-05-12 | 1993-02-09 | Mitsubishi Denki Kabushiki Kaisha | Inversion phenomenon preventing circuit |
US5461339A (en) * | 1992-04-23 | 1995-10-24 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for processing frequency modulated signals |
EP3101679A1 (en) * | 2015-05-31 | 2016-12-07 | FEI Company | Dynamic creation of backup fiducials |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4856377A (enrdf_load_stackoverflow) * | 1971-11-17 | 1973-08-08 | ||
JPS5277670A (en) * | 1975-12-24 | 1977-06-30 | Seiko Epson Corp | Semiconductive device |
-
1979
- 1979-08-14 JP JP10275979A patent/JPS5627927A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4856377A (enrdf_load_stackoverflow) * | 1971-11-17 | 1973-08-08 | ||
JPS5277670A (en) * | 1975-12-24 | 1977-06-30 | Seiko Epson Corp | Semiconductive device |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6074519A (ja) * | 1983-09-30 | 1985-04-26 | Fujitsu Ltd | 電子ビ−ム露光における試料の位置合せ方法 |
US5185679A (en) * | 1988-05-12 | 1993-02-09 | Mitsubishi Denki Kabushiki Kaisha | Inversion phenomenon preventing circuit |
US5461339A (en) * | 1992-04-23 | 1995-10-24 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for processing frequency modulated signals |
EP3101679A1 (en) * | 2015-05-31 | 2016-12-07 | FEI Company | Dynamic creation of backup fiducials |
CN106206224A (zh) * | 2015-05-31 | 2016-12-07 | Fei 公司 | 备用基准的动态创建 |
KR20160141371A (ko) * | 2015-05-31 | 2016-12-08 | 에프이아이 컴파니 | 백업 기점들의 동적 생성 |
US9619728B2 (en) | 2015-05-31 | 2017-04-11 | Fei Company | Dynamic creation of backup fiducials |
TWI713075B (zh) * | 2015-05-31 | 2020-12-11 | 美商Fei公司 | 對準用於處理之一帶電粒子射束之方法,用於形成一薄板以用於穿透式電子檢視之方法,及用於一樣本之帶電粒子射束處理之設備 |
Also Published As
Publication number | Publication date |
---|---|
JPS6244686B2 (enrdf_load_stackoverflow) | 1987-09-22 |
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