JPS5627927A - Location in electron beam injection - Google Patents

Location in electron beam injection

Info

Publication number
JPS5627927A
JPS5627927A JP10275979A JP10275979A JPS5627927A JP S5627927 A JPS5627927 A JP S5627927A JP 10275979 A JP10275979 A JP 10275979A JP 10275979 A JP10275979 A JP 10275979A JP S5627927 A JPS5627927 A JP S5627927A
Authority
JP
Japan
Prior art keywords
standard marks
marks
electron beam
location
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10275979A
Other languages
Japanese (ja)
Other versions
JPS6244686B2 (en
Inventor
Yasunobu Kawachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10275979A priority Critical patent/JPS5627927A/en
Publication of JPS5627927A publication Critical patent/JPS5627927A/en
Publication of JPS6244686B2 publication Critical patent/JPS6244686B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To prevent the degradation of precision of the location of a semiconductor wafer caused by the deformation and the degradation of standard marks by a method wherein two groups of plural standard marks are arranged on the wafer at a prescribed distance, and the standard marks of new combination are injected in order by an electron beam. CONSTITUTION:Two groups of standard marks consisting of plural standard marks goup [A1, A2...An] and [B1, B2...Bn] are arranged on a wafer 1 at a prescribed distance, and the relative locating relation between the location of an electron beam and the wafer is detected using the combination [A1, B1] when the first layer pattern of an integrated circuit is to be made, and using the combination [A2, B2] when the second layer pattern is to be made, etc. Although the standard marks are scanned by the high irradiating quantity of electron beam, the detection of the standard marks when the following pattern of the integrated circuit is to be made is performed using the new combination of standard marks in order, so that the equivalemt deformation or degradation of the standard marks caused by the burning of the resist applied on the marks can be prevented.
JP10275979A 1979-08-14 1979-08-14 Location in electron beam injection Granted JPS5627927A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10275979A JPS5627927A (en) 1979-08-14 1979-08-14 Location in electron beam injection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10275979A JPS5627927A (en) 1979-08-14 1979-08-14 Location in electron beam injection

Publications (2)

Publication Number Publication Date
JPS5627927A true JPS5627927A (en) 1981-03-18
JPS6244686B2 JPS6244686B2 (en) 1987-09-22

Family

ID=14336118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10275979A Granted JPS5627927A (en) 1979-08-14 1979-08-14 Location in electron beam injection

Country Status (1)

Country Link
JP (1) JPS5627927A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074519A (en) * 1983-09-30 1985-04-26 Fujitsu Ltd Specimen aligning process in electron beam exposure
US5185679A (en) * 1988-05-12 1993-02-09 Mitsubishi Denki Kabushiki Kaisha Inversion phenomenon preventing circuit
US5461339A (en) * 1992-04-23 1995-10-24 Mitsubishi Denki Kabushiki Kaisha Apparatus for processing frequency modulated signals
CN106206224A (en) * 2015-05-31 2016-12-07 Fei 公司 The dynamic creation of standby benchmark

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4856377A (en) * 1971-11-17 1973-08-08
JPS5277670A (en) * 1975-12-24 1977-06-30 Seiko Epson Corp Semiconductive device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4856377A (en) * 1971-11-17 1973-08-08
JPS5277670A (en) * 1975-12-24 1977-06-30 Seiko Epson Corp Semiconductive device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074519A (en) * 1983-09-30 1985-04-26 Fujitsu Ltd Specimen aligning process in electron beam exposure
US5185679A (en) * 1988-05-12 1993-02-09 Mitsubishi Denki Kabushiki Kaisha Inversion phenomenon preventing circuit
US5461339A (en) * 1992-04-23 1995-10-24 Mitsubishi Denki Kabushiki Kaisha Apparatus for processing frequency modulated signals
CN106206224A (en) * 2015-05-31 2016-12-07 Fei 公司 The dynamic creation of standby benchmark
EP3101679A1 (en) * 2015-05-31 2016-12-07 FEI Company Dynamic creation of backup fiducials
KR20160141371A (en) * 2015-05-31 2016-12-08 에프이아이 컴파니 Dynamic creation of backup fiducials
US9619728B2 (en) 2015-05-31 2017-04-11 Fei Company Dynamic creation of backup fiducials
TWI713075B (en) * 2015-05-31 2020-12-11 美商Fei公司 Method of aligning a charged particle beam for processing, method for forming a lamella for transmission electron viewing, and apparatus for charged particle beam processing of a sample

Also Published As

Publication number Publication date
JPS6244686B2 (en) 1987-09-22

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