JPS57186327A - Detecting method for mark position in electron beam exposure - Google Patents

Abstract

PURPOSE:To shorten a mark detecting time by emitting an electron beam twice while crossing two line segments when providing two line segments crossing with a semiconductor wafer each other, emitting the electron beam to the wafer to detect the mark position coordinates, thereby obtaining four crossing point coordinates by the twice emissions. CONSTITUTION:Marks M1, M2 of two line segments crossing with each other are formed at the peripheral edge of a semiconductor wafer 1, an electron beam is emitted to either mark, thereby detecting the mark position coordinates. At this time, the electron beam is ordinarily emitted in parallel with the line segments a, b. However, this is improved to cross the electron beam across the segments a, b as designated by an arrow 2 when the first emission is performed, thereby simultaneously obtaining crossing points A, B. When second emission is then performed, the emitting direction is displaced to a direction as designated by an arrow 3, and the crossing points C, D of the segments a, b are obtained at other positions. Thus, the four times scanning can be reduced to twice, and the mark position detecting time for drawing the electron beam can be shortened.