JPS5626468A - Structure of membrane transistor - Google Patents

Structure of membrane transistor

Info

Publication number
JPS5626468A
JPS5626468A JP10191279A JP10191279A JPS5626468A JP S5626468 A JPS5626468 A JP S5626468A JP 10191279 A JP10191279 A JP 10191279A JP 10191279 A JP10191279 A JP 10191279A JP S5626468 A JPS5626468 A JP S5626468A
Authority
JP
Japan
Prior art keywords
electrodes
electrode
membrane
surrounded
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10191279A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0128386B2 (enrdf_load_stackoverflow
Inventor
Hirosaku Nonomura
Yutaka Takato
Sadatoshi Takechi
Hisashi Kamiide
Tomio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP10191279A priority Critical patent/JPS5626468A/ja
Priority to DE3028718A priority patent/DE3028718C2/de
Priority to US06/173,818 priority patent/US4404578A/en
Priority to GB8025044A priority patent/GB2056770B/en
Publication of JPS5626468A publication Critical patent/JPS5626468A/ja
Priority to GB08316195A priority patent/GB2127216B/en
Priority to GB08316196A priority patent/GB2126779B/en
Publication of JPH0128386B2 publication Critical patent/JPH0128386B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP10191279A 1979-07-31 1979-08-09 Structure of membrane transistor Granted JPS5626468A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP10191279A JPS5626468A (en) 1979-08-09 1979-08-09 Structure of membrane transistor
DE3028718A DE3028718C2 (de) 1979-07-31 1980-07-29 Dünnfilmtransistor in Verbindung mit einer Anzeigevorrichtung
US06/173,818 US4404578A (en) 1979-07-31 1980-07-30 Structure of thin film transistors
GB8025044A GB2056770B (en) 1979-07-31 1980-07-31 Thin film transistors
GB08316195A GB2127216B (en) 1979-07-31 1983-06-14 Improved s of thin film transistors and manufacture method thereof
GB08316196A GB2126779B (en) 1979-07-31 1983-06-14 Thin-film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10191279A JPS5626468A (en) 1979-08-09 1979-08-09 Structure of membrane transistor

Publications (2)

Publication Number Publication Date
JPS5626468A true JPS5626468A (en) 1981-03-14
JPH0128386B2 JPH0128386B2 (enrdf_load_stackoverflow) 1989-06-02

Family

ID=14313113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10191279A Granted JPS5626468A (en) 1979-07-31 1979-08-09 Structure of membrane transistor

Country Status (1)

Country Link
JP (1) JPS5626468A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS608070A (ja) * 1983-06-28 1985-01-16 株式会社アイジ−技術研究所 複合板製造装置
JPS63115379A (ja) * 1986-10-31 1988-05-19 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびその製造方法
JP2008235912A (ja) * 2001-11-09 2008-10-02 Semiconductor Energy Lab Co Ltd 半導体装置
JP2014044441A (ja) * 2003-03-26 2014-03-13 Semiconductor Energy Lab Co Ltd 表示装置
US8975632B2 (en) 2002-06-05 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9054199B2 (en) 2001-11-09 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2019024118A (ja) * 2003-06-16 2019-02-14 株式会社半導体エネルギー研究所 発光装置
US10978613B2 (en) 2002-01-18 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5032186A (enrdf_load_stackoverflow) * 1973-07-17 1975-03-28

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5032186A (enrdf_load_stackoverflow) * 1973-07-17 1975-03-28

Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS608070A (ja) * 1983-06-28 1985-01-16 株式会社アイジ−技術研究所 複合板製造装置
JPS63115379A (ja) * 1986-10-31 1988-05-19 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびその製造方法
JP2014222351A (ja) * 2001-11-09 2014-11-27 株式会社半導体エネルギー研究所 発光装置
JP2021013023A (ja) * 2001-11-09 2021-02-04 株式会社半導体エネルギー研究所 発光装置
US11063102B2 (en) 2001-11-09 2021-07-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2014082499A (ja) * 2001-11-09 2014-05-08 Semiconductor Energy Lab Co Ltd 発光装置
US10461140B2 (en) 2001-11-09 2019-10-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US9905624B2 (en) 2001-11-09 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2015072486A (ja) * 2001-11-09 2015-04-16 株式会社半導体エネルギー研究所 発光装置及び電子機器
US9054199B2 (en) 2001-11-09 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2018019084A (ja) * 2001-11-09 2018-02-01 株式会社半導体エネルギー研究所 発光装置
US10680049B2 (en) 2001-11-09 2020-06-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2014042075A (ja) * 2001-11-09 2014-03-06 Semiconductor Energy Lab Co Ltd 半導体装置
JP2015194759A (ja) * 2001-11-09 2015-11-05 株式会社半導体エネルギー研究所 発光装置
JP2015179853A (ja) * 2001-11-09 2015-10-08 株式会社半導体エネルギー研究所 発光装置
JP2021005554A (ja) * 2001-11-09 2021-01-14 株式会社半導体エネルギー研究所 発光装置
JP2016136641A (ja) * 2001-11-09 2016-07-28 株式会社半導体エネルギー研究所 発光装置
US9577016B2 (en) 2001-11-09 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2008235912A (ja) * 2001-11-09 2008-10-02 Semiconductor Energy Lab Co Ltd 半導体装置
US10978613B2 (en) 2002-01-18 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9293477B2 (en) 2002-06-05 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9859353B2 (en) 2002-06-05 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8975632B2 (en) 2002-06-05 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10062742B2 (en) 2002-06-05 2018-08-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2017058685A (ja) * 2003-03-26 2017-03-23 株式会社半導体エネルギー研究所 表示装置
JP2015165585A (ja) * 2003-03-26 2015-09-17 株式会社半導体エネルギー研究所 発光装置及びその作製方法
JP2018146981A (ja) * 2003-03-26 2018-09-20 株式会社半導体エネルギー研究所 発光装置
JP2020038394A (ja) * 2003-03-26 2020-03-12 株式会社半導体エネルギー研究所 発光装置
US9698207B2 (en) 2003-03-26 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Element substrate and light-emitting device
US9300771B2 (en) 2003-03-26 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Element substrate and light-emitting device
JP2015212843A (ja) * 2003-03-26 2015-11-26 株式会社半導体エネルギー研究所 表示装置
US11430845B2 (en) 2003-03-26 2022-08-30 Semiconductor Energy Laboratory Co., Ltd. Element substrate and light-emitting device
JP2014044441A (ja) * 2003-03-26 2014-03-13 Semiconductor Energy Lab Co Ltd 表示装置
JP2022081592A (ja) * 2003-03-26 2022-05-31 株式会社半導体エネルギー研究所 発光装置
JP2019024118A (ja) * 2003-06-16 2019-02-14 株式会社半導体エネルギー研究所 発光装置
JP2023080082A (ja) * 2003-06-16 2023-06-08 株式会社半導体エネルギー研究所 発光装置
JP2023153237A (ja) * 2003-06-16 2023-10-17 株式会社半導体エネルギー研究所 発光装置
JP2024043537A (ja) * 2003-06-16 2024-03-29 株式会社半導体エネルギー研究所 発光装置

Also Published As

Publication number Publication date
JPH0128386B2 (enrdf_load_stackoverflow) 1989-06-02

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