JPS5619626A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5619626A
JPS5619626A JP9422279A JP9422279A JPS5619626A JP S5619626 A JPS5619626 A JP S5619626A JP 9422279 A JP9422279 A JP 9422279A JP 9422279 A JP9422279 A JP 9422279A JP S5619626 A JPS5619626 A JP S5619626A
Authority
JP
Japan
Prior art keywords
wafer
laser
back surface
approx
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9422279A
Other languages
Japanese (ja)
Inventor
Katsuichi Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9422279A priority Critical patent/JPS5619626A/en
Publication of JPS5619626A publication Critical patent/JPS5619626A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To improve the electric contact of a wafer with a stage by roughing the back surface of the semiconductor wafer by the energy beam of a laser or the like. CONSTITUTION:The laser beam having a diameter of approx. 50mum and an energy of approx. 2Joules/cm<2> is irradiated interruptedly from a laser of several kHz to the back surface of the wafer in a scanning speed of several cm/sec and scanning interval of 20mum on all the surface. Then, all the surface is roughed into rugged surface. Thereafter, it is diced to separate respective dies and to mount them easily. It may cause oxide or other compound owing to irradiation of laser light, but when only the back surface of the wafer is irradiated to be etched, the electric contact of the wafer with a stage is improved.
JP9422279A 1979-07-26 1979-07-26 Manufacture of semiconductor device Pending JPS5619626A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9422279A JPS5619626A (en) 1979-07-26 1979-07-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9422279A JPS5619626A (en) 1979-07-26 1979-07-26 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5619626A true JPS5619626A (en) 1981-02-24

Family

ID=14104281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9422279A Pending JPS5619626A (en) 1979-07-26 1979-07-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5619626A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS624867A (en) * 1985-07-01 1987-01-10 Anelva Corp Thin film formation device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS624867A (en) * 1985-07-01 1987-01-10 Anelva Corp Thin film formation device

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