JPS5619625A - Stabilization of surface of semiconductor element - Google Patents

Stabilization of surface of semiconductor element

Info

Publication number
JPS5619625A
JPS5619625A JP9424979A JP9424979A JPS5619625A JP S5619625 A JPS5619625 A JP S5619625A JP 9424979 A JP9424979 A JP 9424979A JP 9424979 A JP9424979 A JP 9424979A JP S5619625 A JPS5619625 A JP S5619625A
Authority
JP
Japan
Prior art keywords
semiconductor element
1atm
junction
reduced pressure
under reduced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9424979A
Other languages
Japanese (ja)
Inventor
Yuji Haji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tohoku Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku Metal Industries Ltd filed Critical Tohoku Metal Industries Ltd
Priority to JP9424979A priority Critical patent/JPS5619625A/en
Publication of JPS5619625A publication Critical patent/JPS5619625A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Abstract

PURPOSE:To stabilize the surface of the semiconductor element by heat treating the surface in a high vacuum and immediately then exposing it with O2 having higher than 1atm. CONSTITUTION:The exposed portion of the P-N junction of the semiconductor element is approached to intrinsic state by chemical treatment such as organic cleaning or the like and is heat treated under reduced pressure. It is preferred to continuously execute in nonoxide atmosphere. The heating under reduced pressure is conducted at 10<-3>Torr. at 300-400 deg.C for 1-3hr, the atmospheric gas is altered to O2 subsequently as it is, is pressurized over 1atm, is then allowed to stand for long time or heat treated at higher than 300 deg.C for longer than 2hr. According to this treatment, the exposed surface of the P-N junction is coated with SiO2 film to be protected against pollution and to reduce reverse leakage current.
JP9424979A 1979-07-26 1979-07-26 Stabilization of surface of semiconductor element Pending JPS5619625A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9424979A JPS5619625A (en) 1979-07-26 1979-07-26 Stabilization of surface of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9424979A JPS5619625A (en) 1979-07-26 1979-07-26 Stabilization of surface of semiconductor element

Publications (1)

Publication Number Publication Date
JPS5619625A true JPS5619625A (en) 1981-02-24

Family

ID=14105020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9424979A Pending JPS5619625A (en) 1979-07-26 1979-07-26 Stabilization of surface of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5619625A (en)

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