JPS57198624A - Annealing method of semiconductor material - Google Patents

Annealing method of semiconductor material

Info

Publication number
JPS57198624A
JPS57198624A JP8347981A JP8347981A JPS57198624A JP S57198624 A JPS57198624 A JP S57198624A JP 8347981 A JP8347981 A JP 8347981A JP 8347981 A JP8347981 A JP 8347981A JP S57198624 A JPS57198624 A JP S57198624A
Authority
JP
Japan
Prior art keywords
semiconductor material
annealing
reproducibility
irradiation
oxidized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8347981A
Other languages
Japanese (ja)
Inventor
Kei Kirita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8347981A priority Critical patent/JPS57198624A/en
Publication of JPS57198624A publication Critical patent/JPS57198624A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To achieve annealing with high uniformity and reproducibility by a method wherein laser ray is irradiated while maintaining the surface of semiconductor material in the oxidized or non-oxidized atmosphere at 2 atmospheric pressure or more. CONSTITUTION:When th irradiation by energy rays with high density like laser or the like is achieved, it is established under 2 atomspheric pressure or more to prevent evaporation of additive impurity from semiconductor material. And if the irradiation may be achieved under the atmosphere of oxide gas or nonoxide gas to increase th annealing effect more, the annealing can be provided at a high uniformity and reproducibility.
JP8347981A 1981-05-30 1981-05-30 Annealing method of semiconductor material Pending JPS57198624A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8347981A JPS57198624A (en) 1981-05-30 1981-05-30 Annealing method of semiconductor material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8347981A JPS57198624A (en) 1981-05-30 1981-05-30 Annealing method of semiconductor material

Publications (1)

Publication Number Publication Date
JPS57198624A true JPS57198624A (en) 1982-12-06

Family

ID=13803597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8347981A Pending JPS57198624A (en) 1981-05-30 1981-05-30 Annealing method of semiconductor material

Country Status (1)

Country Link
JP (1) JPS57198624A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63289813A (en) * 1987-05-21 1988-11-28 Yamaha Corp Heat treatment of semiconductor wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63289813A (en) * 1987-05-21 1988-11-28 Yamaha Corp Heat treatment of semiconductor wafer

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