JPS6450578A - Manufacture of superconducting film - Google Patents

Manufacture of superconducting film

Info

Publication number
JPS6450578A
JPS6450578A JP62208647A JP20864787A JPS6450578A JP S6450578 A JPS6450578 A JP S6450578A JP 62208647 A JP62208647 A JP 62208647A JP 20864787 A JP20864787 A JP 20864787A JP S6450578 A JPS6450578 A JP S6450578A
Authority
JP
Japan
Prior art keywords
substrate
ultraviolet rays
irradiated
heat
superconducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62208647A
Other languages
Japanese (ja)
Inventor
Masatoshi Kitagawa
Takashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62208647A priority Critical patent/JPS6450578A/en
Publication of JPS6450578A publication Critical patent/JPS6450578A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—After-treatment, e.g. patterning

Abstract

PURPOSE:To enable a superconducting film in excellent crystalizability to be formed by heat treatment without shortage of oxygen at all also enabling glass, etc., to be used as a substrate, by a method wherein the substrate is coated with a superconducting compound ceramic oxide layer to be irradiated with a light including at least ultraviolet rays in gas atmosphere containing oxygen. CONSTITUTION:A substrate 16 is coated with a superconducting compound ceramic oxide layer 23 to be irradiated with a light including at least ultraviolet rays in gas atmosphere containing oxygen. For example, the substrate coated with the compound ceramic oxide 23 such as YBCO etc., is arranged in a vessel 11 of a heat. treatment device sufficiently insulating air while a gas containing oxygen such as N2O, O2, etc., is led in the vessel 11 and then the substrate surface is irradiated with ultraviolet rays from a light source 14 such as excimer laser,etc. through a light leadingin window 15. At this time, the ultraviolet rays heat only the surface of the substrate 16 simultaneously decomposing N2O halfway to produce oxygen radical so that the film surface may produce an active oxidizing atmosphere to form a superconducting film 22 heat treated by the photoirradiation.
JP62208647A 1987-08-21 1987-08-21 Manufacture of superconducting film Pending JPS6450578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62208647A JPS6450578A (en) 1987-08-21 1987-08-21 Manufacture of superconducting film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62208647A JPS6450578A (en) 1987-08-21 1987-08-21 Manufacture of superconducting film

Publications (1)

Publication Number Publication Date
JPS6450578A true JPS6450578A (en) 1989-02-27

Family

ID=16559709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62208647A Pending JPS6450578A (en) 1987-08-21 1987-08-21 Manufacture of superconducting film

Country Status (1)

Country Link
JP (1) JPS6450578A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01262680A (en) * 1988-04-13 1989-10-19 Semiconductor Energy Lab Co Ltd Processing of superconductor oxide
FR2671446A1 (en) * 1991-01-08 1992-07-10 Alsthom Cge Alcatel Heating device for a chamber for deposition under partial vacuum of thin films on a substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01262680A (en) * 1988-04-13 1989-10-19 Semiconductor Energy Lab Co Ltd Processing of superconductor oxide
FR2671446A1 (en) * 1991-01-08 1992-07-10 Alsthom Cge Alcatel Heating device for a chamber for deposition under partial vacuum of thin films on a substrate

Similar Documents

Publication Publication Date Title
EP0306069A3 (en) A method of forming an oxide layer on a substrate
JPS56155526A (en) Method of forming film
JPS6450578A (en) Manufacture of superconducting film
JPS6450580A (en) Superconductor substrate and manufacture thereof
EP0126803A3 (en) Method for photochemical conversion of silicon monoxide to silicon dioxide
JPS642318A (en) Formation of thin film
JPS6445176A (en) Manufacture of solar cell element
JPS6445148A (en) Semiconductor device and manufacture thereof
JPS57199227A (en) Manufacture of semiconductor device
KR900002665A (en) Manufacturing method of thin film electric light emitting display device
JPS5586123A (en) Manufacture of semiconductor device
JPS6451673A (en) Manufacture of thin film solar cell
JPS5671943A (en) Oxide film coating of compound semiconductor device
JPS6487586A (en) Production of superconductor
JPS57167632A (en) Surface treating method for semiconductor substrate
JPS6417425A (en) Manufacture of semiconductor device
JPS57207366A (en) Manufacture of semiconductor device
JPS6435929A (en) Manufacture of semiconductor device
JPS5270762A (en) Electrode formation method of semiconductor element
JPS57113233A (en) Manufacture of semiconductor device
JPS57134936A (en) Forming method of insulation film on compound semiconductor
JPS6473729A (en) Formation of thin film
JPS56148825A (en) Manufacture of semiconductor device
JPS57117245A (en) Manufacture of semiconductor substrate
JPS56131935A (en) Heat treatment of semiconductor substrate