JPS5617072A - Manufacture of field effect transistor - Google Patents

Manufacture of field effect transistor

Info

Publication number
JPS5617072A
JPS5617072A JP9286479A JP9286479A JPS5617072A JP S5617072 A JPS5617072 A JP S5617072A JP 9286479 A JP9286479 A JP 9286479A JP 9286479 A JP9286479 A JP 9286479A JP S5617072 A JPS5617072 A JP S5617072A
Authority
JP
Japan
Prior art keywords
regions
oxide film
substrate
thick field
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9286479A
Other languages
Japanese (ja)
Inventor
Yoshiki Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP9286479A priority Critical patent/JPS5617072A/en
Publication of JPS5617072A publication Critical patent/JPS5617072A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To simultaneously form oxide films of thick field and thin gate in a field effect transistor by forming reverse conductivity type high impurity density source and drain regions in one conductivity type semiconductor substrate and producing by low temperature wet oxidation when forming the oxide films of thick field and thin gate. CONSTITUTION:An oxide film 2 having predetermined pattern is formed on the surface of a P-type Si substrate 1, and N<+>-type source and drain regions 3, 4 are diffused on the surface layer exposed on the substrate 1. Then, only the film 2 disposed between the regions 3 and 4 is removed, and is heated in approx. 200min for low temperature wet oxidation of approx. 750 deg.C. In this manner, a thin gate oxide film 7 is formed on the surface of the substrate 1 exposed between the regions 3 and 4, and a relatively thick field oxide film 6 is formed on the regions 3 and 4, and a thick field oxide film laminated on the film 2 is simultaneously formed on the periphery. Thereafter, electrodes 8-10 of source, drain and gate are mounted by the ordinary method.
JP9286479A 1979-07-20 1979-07-20 Manufacture of field effect transistor Pending JPS5617072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9286479A JPS5617072A (en) 1979-07-20 1979-07-20 Manufacture of field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9286479A JPS5617072A (en) 1979-07-20 1979-07-20 Manufacture of field effect transistor

Publications (1)

Publication Number Publication Date
JPS5617072A true JPS5617072A (en) 1981-02-18

Family

ID=14066287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9286479A Pending JPS5617072A (en) 1979-07-20 1979-07-20 Manufacture of field effect transistor

Country Status (1)

Country Link
JP (1) JPS5617072A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52122087A (en) * 1976-03-02 1977-10-13 Hewlett Packard Yokogawa Method of producing mosfet transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52122087A (en) * 1976-03-02 1977-10-13 Hewlett Packard Yokogawa Method of producing mosfet transistor

Similar Documents

Publication Publication Date Title
JPS5736842A (en) Semiconductor integrated circuit device
JPS56124270A (en) Manufacture of semiconductor device
JPS54161282A (en) Manufacture of mos semiconductor device
JPS5617072A (en) Manufacture of field effect transistor
JPS5688358A (en) Manufacture of semiconductor device
JPS56111264A (en) Manufacture of semiconductor device
JPS55157241A (en) Manufacture of semiconductor device
JPS572519A (en) Manufacture of semiconductor device
JPS55107229A (en) Method of manufacturing semiconductor device
JPS5664467A (en) Mos type semiconductor device
JPS5693370A (en) Manufacture of mos-type semiconductor device
JPS567482A (en) Manufacturing of semiconductor device
JPS5513953A (en) Complementary integrated circuit
JPS57207374A (en) Manufacture of semiconductor device
JPS5685853A (en) Manufacture of semiconductor device
JPS562666A (en) Manufacture of semiconductor device
JPS57103347A (en) Manufacture of integrated circuit
JPS5710246A (en) Manufacture of semiconductor device
JPS57114274A (en) Electrode for semiconductor device and manufacture thereof
JPS54124686A (en) Mos transistor and its production
JPS57207375A (en) Manufacture of semiconductor device
JPS5662366A (en) Manufacturing of smiconductor
JPS5472986A (en) Manufacture of field effect transistor of insulation gate type
JPS6465875A (en) Thin film transistor and manufacture thereof
JPS5642373A (en) Manufacture of semiconductor device