JPS5617021A - Surface treatment of substrate - Google Patents
Surface treatment of substrateInfo
- Publication number
- JPS5617021A JPS5617021A JP9226679A JP9226679A JPS5617021A JP S5617021 A JPS5617021 A JP S5617021A JP 9226679 A JP9226679 A JP 9226679A JP 9226679 A JP9226679 A JP 9226679A JP S5617021 A JPS5617021 A JP S5617021A
- Authority
- JP
- Japan
- Prior art keywords
- substrates
- plate
- solution
- substrate
- bubbles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title abstract 5
- 238000004381 surface treatment Methods 0.000 title 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9226679A JPS5617021A (en) | 1979-07-20 | 1979-07-20 | Surface treatment of substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9226679A JPS5617021A (en) | 1979-07-20 | 1979-07-20 | Surface treatment of substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5617021A true JPS5617021A (en) | 1981-02-18 |
JPS6325498B2 JPS6325498B2 (ja) | 1988-05-25 |
Family
ID=14049587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9226679A Granted JPS5617021A (en) | 1979-07-20 | 1979-07-20 | Surface treatment of substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5617021A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58123730A (ja) * | 1982-01-18 | 1983-07-23 | Toshiba Corp | 半導体ウエハ−エツチング装置 |
JPS6386525A (ja) * | 1986-09-30 | 1988-04-16 | Kyushu Denshi Kinzoku Kk | 半導体シリコンウエ−ハのエツチング装置 |
JPH0160532U (ja) * | 1987-10-13 | 1989-04-17 | ||
JP2009522771A (ja) * | 2005-12-30 | 2009-06-11 | ラム リサーチ コーポレーション | 基板から汚染を除去するための方法および装置 |
CN103377878A (zh) * | 2012-04-18 | 2013-10-30 | 三菱电机株式会社 | 凹凸化硅基板的制造方法、处理装置和太阳能电池元件的制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5093775A (ja) * | 1973-12-19 | 1975-07-26 | ||
JPS5110770A (ja) * | 1974-07-16 | 1976-01-28 | Matsushita Electric Ind Co Ltd | Etsuchinguhoho |
JPS5115977A (en) * | 1974-07-31 | 1976-02-07 | Hitachi Ltd | Banjobutsuno keishaetsuchinguho |
-
1979
- 1979-07-20 JP JP9226679A patent/JPS5617021A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5093775A (ja) * | 1973-12-19 | 1975-07-26 | ||
JPS5110770A (ja) * | 1974-07-16 | 1976-01-28 | Matsushita Electric Ind Co Ltd | Etsuchinguhoho |
JPS5115977A (en) * | 1974-07-31 | 1976-02-07 | Hitachi Ltd | Banjobutsuno keishaetsuchinguho |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58123730A (ja) * | 1982-01-18 | 1983-07-23 | Toshiba Corp | 半導体ウエハ−エツチング装置 |
JPS6386525A (ja) * | 1986-09-30 | 1988-04-16 | Kyushu Denshi Kinzoku Kk | 半導体シリコンウエ−ハのエツチング装置 |
JPH0160532U (ja) * | 1987-10-13 | 1989-04-17 | ||
JP2009522771A (ja) * | 2005-12-30 | 2009-06-11 | ラム リサーチ コーポレーション | 基板から汚染を除去するための方法および装置 |
CN103377878A (zh) * | 2012-04-18 | 2013-10-30 | 三菱电机株式会社 | 凹凸化硅基板的制造方法、处理装置和太阳能电池元件的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6325498B2 (ja) | 1988-05-25 |
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