JPS56167347A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56167347A
JPS56167347A JP7118480A JP7118480A JPS56167347A JP S56167347 A JPS56167347 A JP S56167347A JP 7118480 A JP7118480 A JP 7118480A JP 7118480 A JP7118480 A JP 7118480A JP S56167347 A JPS56167347 A JP S56167347A
Authority
JP
Japan
Prior art keywords
type
regions
highly concentrated
conductive type
type regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7118480A
Other languages
Japanese (ja)
Other versions
JPS6322066B2 (en
Inventor
Kimimaro Yoshikawa
Kazuo Adachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7118480A priority Critical patent/JPS56167347A/en
Priority to GB8116291A priority patent/GB2080617B/en
Publication of JPS56167347A publication Critical patent/JPS56167347A/en
Publication of JPS6322066B2 publication Critical patent/JPS6322066B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

PURPOSE:To prevent the generation of parasitic MOS effect in the semiconductor device by a method wherein the other conductive type region formed in a one conductive type substrate is surrounded with the one conductive type highly concentrated regions and other conductive type regions or wiring layers connected to the one conductive type highly concentrated regions. CONSTITUTION:For example, in the structure being provided with the reversely biased P type regions 11, 13 in the N type substrate 17, and being arranged with an Al wiring 14 between those regions interposing an insulating film between them, the highly concentrated N type regions 12 are provided as channel blocking layers on both sides of the P type region 11. The Al wirings 15, 16 to be connected to the P type region 11 are positioned at both ends of the N type regions 12, for example, as to surround the P type region 11 with the N type regions 12 and the wirings 15, 16. Accordingly a leak current to be generated between the P type regions 11, 13 can be prevented completely even when the oxide film is electrically charged because of contamination, etc. Moreover because channel blocking effect can be obtained without extending the highly concentrated N type regions expressely, enhancement of integration can be realized.
JP7118480A 1980-05-28 1980-05-28 Semiconductor device Granted JPS56167347A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP7118480A JPS56167347A (en) 1980-05-28 1980-05-28 Semiconductor device
GB8116291A GB2080617B (en) 1980-05-28 1981-05-28 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7118480A JPS56167347A (en) 1980-05-28 1980-05-28 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56167347A true JPS56167347A (en) 1981-12-23
JPS6322066B2 JPS6322066B2 (en) 1988-05-10

Family

ID=13453307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7118480A Granted JPS56167347A (en) 1980-05-28 1980-05-28 Semiconductor device

Country Status (2)

Country Link
JP (1) JPS56167347A (en)
GB (1) GB2080617B (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5023791A (en) * 1973-06-30 1975-03-14

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5023791A (en) * 1973-06-30 1975-03-14

Also Published As

Publication number Publication date
JPS6322066B2 (en) 1988-05-10
GB2080617B (en) 1984-09-26
GB2080617A (en) 1982-02-03

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