JPS56165338A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS56165338A JPS56165338A JP6926980A JP6926980A JPS56165338A JP S56165338 A JPS56165338 A JP S56165338A JP 6926980 A JP6926980 A JP 6926980A JP 6926980 A JP6926980 A JP 6926980A JP S56165338 A JPS56165338 A JP S56165338A
- Authority
- JP
- Japan
- Prior art keywords
- opening
- section
- region
- coated
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000001259 photo etching Methods 0.000 abstract 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 abstract 1
- 238000005566 electron beam evaporation Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6926980A JPS56165338A (en) | 1980-05-23 | 1980-05-23 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6926980A JPS56165338A (en) | 1980-05-23 | 1980-05-23 | Semiconductor device and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56165338A true JPS56165338A (en) | 1981-12-18 |
| JPS639658B2 JPS639658B2 (enrdf_load_stackoverflow) | 1988-03-01 |
Family
ID=13397787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6926980A Granted JPS56165338A (en) | 1980-05-23 | 1980-05-23 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56165338A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5966170A (ja) * | 1982-10-08 | 1984-04-14 | Toshiba Corp | 半導体装置の製造方法 |
| JPS6042849A (ja) * | 1983-08-18 | 1985-03-07 | Sharp Corp | 半導体装置の製造方法 |
| JPH01286432A (ja) * | 1988-05-13 | 1989-11-17 | Nippon Telegr & Teleph Corp <Ntt> | 絶縁膜の欠陥の検出方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS494987A (enrdf_load_stackoverflow) * | 1972-04-26 | 1974-01-17 | ||
| JPS5169985A (en) * | 1974-12-16 | 1976-06-17 | Hitachi Ltd | Handotaisochino seizohoho |
| JPS51112266A (en) * | 1975-03-28 | 1976-10-04 | Hitachi Ltd | Semiconductor device production method |
| US3986903A (en) * | 1974-03-13 | 1976-10-19 | Intel Corporation | Mosfet transistor and method of fabrication |
| JPS5210672A (en) * | 1975-07-15 | 1977-01-27 | Matsushita Electric Ind Co Ltd | Semi-conductor device |
| JPS5284981A (en) * | 1976-01-06 | 1977-07-14 | Mitsubishi Electric Corp | Production of insulated gate type semiconductor device |
-
1980
- 1980-05-23 JP JP6926980A patent/JPS56165338A/ja active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS494987A (enrdf_load_stackoverflow) * | 1972-04-26 | 1974-01-17 | ||
| US3986903A (en) * | 1974-03-13 | 1976-10-19 | Intel Corporation | Mosfet transistor and method of fabrication |
| JPS5169985A (en) * | 1974-12-16 | 1976-06-17 | Hitachi Ltd | Handotaisochino seizohoho |
| JPS51112266A (en) * | 1975-03-28 | 1976-10-04 | Hitachi Ltd | Semiconductor device production method |
| JPS5210672A (en) * | 1975-07-15 | 1977-01-27 | Matsushita Electric Ind Co Ltd | Semi-conductor device |
| JPS5284981A (en) * | 1976-01-06 | 1977-07-14 | Mitsubishi Electric Corp | Production of insulated gate type semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5966170A (ja) * | 1982-10-08 | 1984-04-14 | Toshiba Corp | 半導体装置の製造方法 |
| JPS6042849A (ja) * | 1983-08-18 | 1985-03-07 | Sharp Corp | 半導体装置の製造方法 |
| JPH01286432A (ja) * | 1988-05-13 | 1989-11-17 | Nippon Telegr & Teleph Corp <Ntt> | 絶縁膜の欠陥の検出方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS639658B2 (enrdf_load_stackoverflow) | 1988-03-01 |
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