JPS56164583A - Manufacture of photosensitive semiconductor device - Google Patents

Manufacture of photosensitive semiconductor device

Info

Publication number
JPS56164583A
JPS56164583A JP6863080A JP6863080A JPS56164583A JP S56164583 A JPS56164583 A JP S56164583A JP 6863080 A JP6863080 A JP 6863080A JP 6863080 A JP6863080 A JP 6863080A JP S56164583 A JPS56164583 A JP S56164583A
Authority
JP
Japan
Prior art keywords
film
al2o3
transparent
lattice type
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6863080A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6148798B2 (enrdf_load_stackoverflow
Inventor
Hisao Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6863080A priority Critical patent/JPS56164583A/ja
Publication of JPS56164583A publication Critical patent/JPS56164583A/ja
Publication of JPS6148798B2 publication Critical patent/JPS6148798B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP6863080A 1980-05-22 1980-05-22 Manufacture of photosensitive semiconductor device Granted JPS56164583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6863080A JPS56164583A (en) 1980-05-22 1980-05-22 Manufacture of photosensitive semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6863080A JPS56164583A (en) 1980-05-22 1980-05-22 Manufacture of photosensitive semiconductor device

Publications (2)

Publication Number Publication Date
JPS56164583A true JPS56164583A (en) 1981-12-17
JPS6148798B2 JPS6148798B2 (enrdf_load_stackoverflow) 1986-10-25

Family

ID=13379245

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6863080A Granted JPS56164583A (en) 1980-05-22 1980-05-22 Manufacture of photosensitive semiconductor device

Country Status (1)

Country Link
JP (1) JPS56164583A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935491A (ja) * 1982-08-24 1984-02-27 Sanyo Electric Co Ltd 光半導体装置
JPS6432814A (en) * 1987-07-28 1989-02-02 Nissan Motor Armrest mount structure of seat for car
JPH077174A (ja) * 1993-01-28 1995-01-10 Gold Star Electron Co Ltd フォトダイオードおよびその製造方法
US8110740B2 (en) * 2005-08-10 2012-02-07 Enplas Corporation Photoelectrode substrate of dye sensitizing solar cell, and method for producing same
WO2012030407A1 (en) * 2010-09-03 2012-03-08 Tetrasun, Inc. Fine line metallization of photovoltaic devices by partial lift-off of optical coatings
US9673341B2 (en) 2015-05-08 2017-06-06 Tetrasun, Inc. Photovoltaic devices with fine-line metallization and methods for manufacture

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935491A (ja) * 1982-08-24 1984-02-27 Sanyo Electric Co Ltd 光半導体装置
JPS6432814A (en) * 1987-07-28 1989-02-02 Nissan Motor Armrest mount structure of seat for car
JPH077174A (ja) * 1993-01-28 1995-01-10 Gold Star Electron Co Ltd フォトダイオードおよびその製造方法
US8110740B2 (en) * 2005-08-10 2012-02-07 Enplas Corporation Photoelectrode substrate of dye sensitizing solar cell, and method for producing same
WO2012030407A1 (en) * 2010-09-03 2012-03-08 Tetrasun, Inc. Fine line metallization of photovoltaic devices by partial lift-off of optical coatings
US8236604B2 (en) 2010-09-03 2012-08-07 Tetrasun, Inc. Fine line metallization of photovoltaic devices by partial lift-off of optical coatings
AU2011282499B2 (en) * 2010-09-03 2014-06-19 Tetrasun, Inc. Fine line metallization of photovoltaic devices by partial lift-off of optical coatings
AU2014224095B2 (en) * 2010-09-03 2016-11-17 Tetrasun, Inc. Fine line metallization of photovoltaic devices by partial lift-off of optical coatings
US9673341B2 (en) 2015-05-08 2017-06-06 Tetrasun, Inc. Photovoltaic devices with fine-line metallization and methods for manufacture

Also Published As

Publication number Publication date
JPS6148798B2 (enrdf_load_stackoverflow) 1986-10-25

Similar Documents

Publication Publication Date Title
JPS59103383A (ja) 光起電力装置の製造方法
JPS56164583A (en) Manufacture of photosensitive semiconductor device
JPS56160740A (en) Manufacture of thin-film field type cold cathode
JPS57100770A (en) Switching element
JPS5745980A (en) Amorphous solar battery and manufacture thereof
JPS5491087A (en) Manufacture of thin-film solar cell
JPS5555580A (en) Method of fabricating solar battery
JPS5772368A (en) Fusing type semiconductor device and its manufacture
JPH01169973A (ja) 非晶質太陽電池と薄膜二次電池の一体型素子
JPS5661175A (en) Thin-film solar cell
JPS6421958A (en) Image sensor
JPS5976480A (ja) アモルフアスシリコン太陽電池
JPS56158424A (en) Electrolytic copper plating for compound semiconductor
JPS5950571A (ja) 非晶質シリコン太陽電池の製造方法
JPS6410540A (en) Formation of multilayer electrode
JPS5664467A (en) Mos type semiconductor device
JPS5475488A (en) Composite ion exchange membrane
JPS56148876A (en) Manufacture of mis type photoelectric converter
JPS6472569A (en) Manufacture of photoelectric conversion device
JPS56142685A (en) Manufacture of photoelectric converter
JPS54117681A (en) Production of semiconductor device
JPS55133579A (en) Solar battery
JPS5613733A (en) Forming method for electrode
JPS577977A (en) Photo electromotive force element
JPS5688374A (en) Evaporated thin film diode