JPS6148798B2 - - Google Patents

Info

Publication number
JPS6148798B2
JPS6148798B2 JP55068630A JP6863080A JPS6148798B2 JP S6148798 B2 JPS6148798 B2 JP S6148798B2 JP 55068630 A JP55068630 A JP 55068630A JP 6863080 A JP6863080 A JP 6863080A JP S6148798 B2 JPS6148798 B2 JP S6148798B2
Authority
JP
Japan
Prior art keywords
film
transparent
metal electrode
transparent conductive
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55068630A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56164583A (en
Inventor
Hisao Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6863080A priority Critical patent/JPS56164583A/ja
Publication of JPS56164583A publication Critical patent/JPS56164583A/ja
Publication of JPS6148798B2 publication Critical patent/JPS6148798B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP6863080A 1980-05-22 1980-05-22 Manufacture of photosensitive semiconductor device Granted JPS56164583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6863080A JPS56164583A (en) 1980-05-22 1980-05-22 Manufacture of photosensitive semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6863080A JPS56164583A (en) 1980-05-22 1980-05-22 Manufacture of photosensitive semiconductor device

Publications (2)

Publication Number Publication Date
JPS56164583A JPS56164583A (en) 1981-12-17
JPS6148798B2 true JPS6148798B2 (enrdf_load_stackoverflow) 1986-10-25

Family

ID=13379245

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6863080A Granted JPS56164583A (en) 1980-05-22 1980-05-22 Manufacture of photosensitive semiconductor device

Country Status (1)

Country Link
JP (1) JPS56164583A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935491A (ja) * 1982-08-24 1984-02-27 Sanyo Electric Co Ltd 光半導体装置
JP2582264B2 (ja) * 1987-07-28 1997-02-19 日産自動車株式会社 自動車用シ−トのア−ムレスト取付構造
US5449924A (en) * 1993-01-28 1995-09-12 Goldstar Electron Co., Ltd. Photodiode having a Schottky barrier formed on the lower metallic electrode
JP4966525B2 (ja) * 2005-08-10 2012-07-04 株式会社エンプラス 色素増感型太陽電池、その光電極基板およびその光電極基板の製造方法
US8236604B2 (en) * 2010-09-03 2012-08-07 Tetrasun, Inc. Fine line metallization of photovoltaic devices by partial lift-off of optical coatings
US9673341B2 (en) 2015-05-08 2017-06-06 Tetrasun, Inc. Photovoltaic devices with fine-line metallization and methods for manufacture

Also Published As

Publication number Publication date
JPS56164583A (en) 1981-12-17

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